FR106,FR106 pdf中文资料,FR106引脚图,FR106电路-Datasheet-电子工程世界

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FR101 - FR107-STR

PRV : 50 - 1000 Volts

Io : 1.0 Ampere

FEATURES :

High current capability

High surge current capability

High reliability

Low reverse current

Low forward voltage drop

Fast switching for high efficiency

FAST RECOVERY

RECTIFIER DIODES

DO - 41

1.00 (25.4)

MIN.

0.107 (2.7)

0.080 (2.0)

0.205 (5.2)

0.166 (4.2)

MECHANICAL DATA :

* Case : DO-41 Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.34 gram

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

0.034 (0.86)

0.028 (0.71)

1.00 (25.4)

MIN.

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

RATING

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current

0.375"(9.5mm) Lead Length

Ta = 55

°C

Peak Forward Surge Current,

8.3ms Single half sine wave Superimposed

on rated load (JEDEC Method)

Maximum Peak Forward Voltage at I

= 1.0 Amp.

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Ta = 25

°C

Ta = 100

°C

SYMBOL

FR101 FR102 FR103 FR104 FR105 FR106 FR107

FR107

-STR

UNIT

RRM

RMS

F(AV)

100

200

140

200

400

280

400

1.0

600

420

600

800

560

800

1000

700

1000

700

1000

FSM

R(H)

Trr

1.3

150

- 65 to + 150

250

500

250

µA

°C

Maximum Reverse Recovery Time ( Note 1 )

Typical Junction Capacitance ( Note 2 )

Junction Temperature Range

Storage Temperature Range

Notes :

STG

( 1 ) Reverse Recovery Test Conditions : I

= 0.5 A, I

= 1.0 A, Irr = 0.25 A.

( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V

Page 1 of 2

Rev. 01 : January 10, 2004

RATING AND CHARACTERISTIC CURVES ( FR101 - FR107-STR )

FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

Ω

+ 0.5 A

D.U.T.

50 Vdc

(approx.)

Ω

PULSE

GENERATOR

( NOTE 2 )

OSCILLOSCOPE

( NOTE 1 )

- 0.25 A

Trr

- 1.0 A

SET TIME BASE FOR 50-100 ns/cm

NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.

2. Rise time = 10 ns max., Source Impedance = 50 ohms.

3. All Resistors = Non-inductive Types.

1 cm

FIG.2 - DERATING CURVE FOR OUTPUT

RECTIFIED CURRENT

1.0

FIG.3 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

PEAK FORWARD SURGE

CURRENT, AMPERES

8.3 ms SINGLE HALF SINE WAVE

Ta = 50

°C

AVERAGE FORWARD OUTPUT

CURRENT, AMPERES

0.8

0.6

0.4

0.2

60Hz RESISTIVE OR INDUCTIVE LOAD

100

125

150

175

60 100

AMBIENT TEMPERATURE, (

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

REVERSE CURRENT, MICROAMPERES

NUMBER OF CYCLES AT 60Hz

FIG.5 - TYPICAL REVERSE CHARACTERISTICS

100

= 100

°C

FORWARD CURRENT, AMPERES

Pulse W idth = 300

µs

2% Duty Cycle

= 25

°C

1.0

0.1

= 25

°C

0.1

0.01

100

120

140

PERCENT OF RATED REVERSE VOLTAGE, (%)

0.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

FORWARD VOLTAGE, VOLTS

参数对比

与FR106相近的元器件有：FR102、FR103、FR104、FR105、FR107、FR107-STR。描述及对比如下：

型号	FR106	FR102	FR103	FR104	FR105	FR107	FR107-STR
描述	1 A, 800 V, SILICON, SIGNAL DIODE, DO-41	1 A, 100 V, SILICON, SIGNAL DIODE, DO-41	1 A, 200 V, SILICON, SIGNAL DIODE, DO-41	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41	RECTIFIER DIODE,1KV V(RRM),DO-41	RECTIFIER DIODE, DO-41
厂商名称	SynSemi	SynSemi	SynSemi	SynSemi	SynSemi	SynSemi	-
包装说明	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	-
Reach Compliance Code	unknow	unknown	unknow	unknown	unknow	unknow	-
其他特性	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	-
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	-
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	-
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	-
JEDEC-95代码	DO-41	DO-41	DO-41	DO-41	DO-41	DO-41	-
JESD-30 代码	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	-
元件数量	1	1	1	1	1	1	-
端子数量	2	2	2	2	2	2	-
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	-
最低工作温度	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-
最大输出电流	1 A	1 A	1 A	1 A	1 A	1 A	-
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	-
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	-
最大重复峰值反向电压	800 V	100 V	200 V	400 V	600 V	1000 V	-
最大反向恢复时间	0.5 µs	0.15 µs	0.15 µs	0.15 µs	0.25 µs	0.5 µs	-
表面贴装	NO	NO	NO	NO	NO	NO	-
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	-
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	-