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FR201G

2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15

器件类别：分立半导体    二极管   

厂商名称：Goodwork Semiconductor ( GW )

厂商官网：http://www.goodwork.com.tw/

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参数 预览 参数对比
器件参数
参数名称
属性值
厂商名称
Goodwork Semiconductor ( GW )
包装说明
O-PALF-W2
Reach Compliance Code
unknown
其他特性
HIGH RELIABILITY
应用
FAST RECOVERY
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.3 V
JEDEC-95代码
DO-15
JESD-30 代码
O-PALF-W2
最大非重复峰值正向电流
70 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-65 °C
最大输出电流
2 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
最大重复峰值反向电压
50 V
最大反向电流
5 µA
最大反向恢复时间
0.15 µs
表面贴装
NO
端子形式
WIRE
端子位置
AXIAL
文档预览
FR201G
THRU
FR207G
2.0
AMP GLASS PASSIVATED FAST RECOVERY RECTIFIERS
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
* Glass passivated junction
2.0 Amperes
DO-15
.140(3.6)
.104(2.6)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
.034(.9)
.028(.7)
DIA.
.300(7.6)
.230(5.8)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=55 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 2.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
FR201G FR202G FR203G FR204G FR205G FR206G FR207G
UNITS
50
35
50
100
70
100
200
140
200
400
280
400
2.0
60
1.3
5.0
100
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
A
150
40
-65 +150
250
500
A
nS
pF
C
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
182
RATING AND CHARACTERISTIC CURVES (FR201G THRU FR207G)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
Tj=25 C
Pulse Width 300us
1% Duty Cycle
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.375"(9.5mm) Lead Length
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
50
INSTANTANEOUS FORWARD CURRENT,(A)
10
3.0
1.0
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE,( C)
0.1
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,(A)
100
.01
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLT
AGE,(V)
80
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
60
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
40
20
(+)
25Vdc
(approx.)
( )
1
W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
140
120
100
80
60
40
20
trr
+0.5A
|
|
|
|
|
|
|
|
0
-0.25A
JUNCTION CAPACITANCE,(pF)
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
183
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参数对比
与FR201G相近的元器件有：FR203G、FR205G、FR206G、FR202G、FR204G、FR207G。描述及对比如下：
型号 FR201G FR203G FR205G FR206G FR202G FR204G FR207G
描述 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15 RECTIFIER DIODE, DO-15 2 A, 800 V, SILICON, RECTIFIER DIODE, DO-15 RECTIFIER DIODE, DO-15 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15
厂商名称 Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW ) Goodwork Semiconductor ( GW )
Reach Compliance Code unknown unknow unknown unknown unknown unknown unknow
其他特性 HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
应用 FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
JEDEC-95代码 DO-15 DO-15 DO-15 DO-15 DO-15 DO-15 DO-15
JESD-30 代码 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
最大非重复峰值正向电流 70 A 70 A 70 A 70 A 70 A 70 A 70 A
元件数量 1 1 1 1 1 1 1
相数 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
最大输出电流 2 A 2 A 2 A 2 A 2 A 2 A 2 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
最大重复峰值反向电压 50 V 200 V 600 V 800 V 100 V 400 V 1000 V
最大反向电流 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
最大反向恢复时间 0.15 µs 0.15 µs 0.25 µs 0.5 µs 0.15 µs 0.15 µs 0.5 µs
表面贴装 NO NO NO NO NO NO NO
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
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器件捷径:
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