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FR8A06-G

Rectifier Diode, 1 Phase, 1 Element, 8A, 800V V(RRM), Silicon, TO-220AC,

器件类别：分立半导体    二极管   

厂商名称：Comchip Technology

厂商官网：http://www.comchiptech.com/

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Comchip Technology
包装说明
R-PSFM-T2
Reach Compliance Code
compliant
ECCN代码
EAR99
应用
EFFICIENCY
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.3 V
JEDEC-95代码
TO-220AC
JESD-30 代码
R-PSFM-T2
最大非重复峰值正向电流
150 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
8 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
最大重复峰值反向电压
800 V
最大反向电流
10 µA
最大反向恢复时间
0.5 µs
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
文档预览
Glass Passivated Fast Recovery Rectifier
FR8A01-G THRU FR8A07-G
Voltage Range 50 to 1000 V
TO-220AC
Current 8.0 Ampere
Features
.185(4.70)
MAX.412(10.5)
.175(4.44)
.154(3.91)
Fast switching for high efficiency
.055(1.40)
.06(1.52)
DIA
.148(3.74)
.045(1.14)
.05(1.27)
Low forward voltage drop
High current capability
.594(15.1)
.587(14.9)
PIN
Low reverse leakage current
1
2
High surge current capability
Mechanical Data
.56(14.22)
.11(2.79)
.53(13.46)
Case: Molded plastic TO-220AC
.10(2.54)
.037(0.94)
.027(0.68)
Epoxy: UL 94V-0 rate flame retardant
.025(0.64)
.205(5.20)
Terminals: Solderable per MIL-STD-202
.014(0.35)
.195(4.95)
1
method 208
2
Polarity:Color band denotes cathode
Dimensions in inches and (millimeters)
Mounting position: Any
Weight: 2.03 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.16(4.06)
.14(3.56)
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=100
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 8.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
FR
FR
FR
FR
FR
FR
FR
UNIT
8A01-G 8A02-G 8A03-G 8A04-G 8A05-G 8A06-G 8A07-G
50
35
50
100
70
100
200
140
200
400
280
400
8.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
150
MAX.05(1.5)
.27(6.86)
.23(5.84)
A
V
F
1.3
10.0
250
150
65
2.2
-55 to + 150
o
V
uA
uA
250
500
nS
pF
CW
o
I
R
Trr
C
J
R
JC
T
J
, T
STG
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
COMCHIP TECHNOLOGY 4115 CLIPPER CT. FREMONT CA 94538 TEL: (510) 657-8671 FAX: (510) 657-8921
Glass Passivated Fast Recovery Rectifier
RATINGS AND CHARACTERISTIC CURVES FR8A01-G THRU FR8A07-G
FIG.1 - FORWARD CURRENT DERATING CURVE
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
50
100
o
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
150
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
125
100
75
50
25
60 Hz Resistive or
Inductive load
150
0
1
10
100
CASE TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
100
T
J
=125 C
o
1.0
10
0.1
1
T
J
=25 C
o
0.01
0.2
0.4
0.6
0.8
T
J
=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
1.0
1.2
1.4
1.6
o
0.1
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE, pF
T
J
= 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
o
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
COMCHIP TECHNOLOGY 4115 CLIPPER CT. FREMONT CA 94538 TEL: (510) 657-8671 FAX: (510) 657-8921
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参数对比
与FR8A06-G相近的元器件有：FR8A03-G、FR8A05-G、FR8A02-G、FR8A04-G。描述及对比如下：
型号 FR8A06-G FR8A03-G FR8A05-G FR8A02-G FR8A04-G
描述 Rectifier Diode, 1 Phase, 1 Element, 8A, 800V V(RRM), Silicon, TO-220AC, Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-220AC, Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC, Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-220AC, Rectifier Diode, 1 Phase, 1 Element, 8A, 400V V(RRM), Silicon, TO-220AC,
是否Rohs认证 符合 符合 符合 符合 符合
厂商名称 Comchip Technology Comchip Technology Comchip Technology Comchip Technology Comchip Technology
包装说明 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
应用 EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
JEDEC-95代码 TO-220AC TO-220AC TO-220AC TO-220AC TO-220AC
JESD-30 代码 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2
最大非重复峰值正向电流 150 A 150 A 150 A 150 A 150 A
元件数量 1 1 1 1 1
相数 1 1 1 1 1
端子数量 2 2 2 2 2
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C
最大输出电流 8 A 8 A 8 A 8 A 8 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
最大重复峰值反向电压 800 V 200 V 600 V 100 V 400 V
最大反向电流 10 µA 10 µA 10 µA 10 µA 10 µA
最大反向恢复时间 0.5 µs 0.15 µs 0.25 µs 0.15 µs 0.15 µs
表面贴装 NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE
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器件捷径:
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