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FS1M

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC

器件类别:半导体    分立半导体   

厂商名称:MCC

厂商官网:http://www.mccsemi.com

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MCC
Features
  omponents
21201 Itasca Street Chatsworth

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FS1A
THRU
FS1M
1 Amp Fast Recovery
Silicon Rectifier
50 to 1000 Volts
DO-214AC
(SMAJ) (High Profile)
H
Cathode Band
For Surface Mount Applications
Extremely Low Thermal Resistance
Easy Pick And Place
High Temp Soldering: 250°C for 10 Seconds At Terminals
Superfast Recovery Times For High Efficiency
Maximum Ratings
Operating Temperature: -50°C to +150°C
Storage Temperature: -50°C to +150°C
Maximum Thermal Resistance; 15
°C/W
Junction To Lead
MCC
Device
Maximum
Maximum Maximum
Catalog
Marking
Recurrent
RMS
DC
Number
Peak Reverse
Voltage
Blocking
Voltage
Voltage
FS1A
FS1A
50V
35V
50V
FS1B
FS1B
100V
70V
100V
FS1D
FS1D
200V
140V
200V
FS1G
FS1G
400V
280V
400V
FS1J
FS1J
600V
420V
600V
FS1K
FS1K
800V
560V
800V
FS1M
FS1M
1000V
700V
1000V
J
A
E
F
G
C
D
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
1.0A
T
J
= 90°C
current
Peak Forward Surge
I
FSM
30A
8.3ms, half sine
Current
I
FM
= 1.0A;
Maximum
1.30V
Instantaneous
V
F
T
J
= 25°C*
Forward Voltage
Maximum DC
Reverse Current At
I
R
5µA
T
J
= 25°C
Rated DC Blocking
200µA T
J
= 125°C
Voltage
Maximum Reverse
Recovery Time
150ns
FS1A-G
I
F
=0.5A, I
R
=1.0A,
T
rr
250ns
I
rr
=0.25A
FS1J
500ns
FS1K-M
Typical Junction
C
J
50pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse test: Pulse width 200
µsec,
Duty cycle 2%
DIM
A
B
C
D
E
F
G
H
J
INCHES
MIN
.078
.067
.002
---
.035
.065
.205
.160
.100
MAX
.116
.089
.008
.02
.055
.096
.224
.180
.112
DIMENSIONS
MM
MIN
1.98
1.70
.05
---
.89
1.65
5.21
4.06
2.57
MAX
2.95
2.25
.20
.51
1.40
2.45
5.69
4.57
2.84
NOTE
SUGGESTED SOLDER
PAD LAYOUT
0.090”
0.085”
0.070”
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FS1A thru FS1M
Figure 1
Typical Forward Characteristics
20
10
6
4
2
25°C
Amps
1
.6
.4
.2
.1
.06
.04
.02
.01
.6
.8
10
Volts
Instantaneous Forward Current - Amperes
versus
Instantaneous Forward Voltage - Volts
1.2
1.4
1.6
Amps
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
.8
.6
.4
Figure 2
Forward Derating Curve
MCC
Single Phase, Half Wave
.2 60Hz Resistive or Inductive Load
0
0
25
50
75
°C
Average Forward Rectified Current - Amperes
versus
Ambient Temperature -
°C
100
125
150
Figure 3
Junction Capacitance
100
60
40
20
pF
T
J
=25°C
10
6
4
2
1
.1
.2
.4
1
Volts
2
4
10
20
40
100
200
400
1000
Junction Capacitance - pF
versus
Reverse Voltage - Volts
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FS1A thru FS1M
Figure 4
Peak Forward Surge Current
36
30
24
18
Amps
12
6
0
1
4
6
8 10
Cycles
Peak Forward Surge Current - Amperes
versus
Number Of Cycles At 60Hz - Cycles
20
40
60 80 100
MCC
Figure 5
New SMA Assembly
Round Lead
Process
2
Figure 6
Reverse Recovery Time Characteristic And Test Circuit Diagram
50Ω
10Ω
t
rr
+0.5A
0
25Vdc
Pulse
Generator
Note 2
1Ω
Oscilloscope
Note 1
-0.25
-1.0
1cm
Set Time Base for 20/100ns/cm
Notes:
1. Rise Time = 7ns max.
Input impedance = 1 megohm, 22pF
2. Rise Time = 10ns max.
Source impedance = 50 ohms
3. Resistors are non-inductive
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参数对比
与FS1M相近的元器件有:FS1A、FS1B、FS1D、FS1G、FS1J、FS1K。描述及对比如下:
型号 FS1M FS1A FS1B FS1D FS1G FS1J FS1K
描述 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC
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