FS2510.W
STANDARD SCR
TO220-F
(
FULLY ISOLATED CASE)
On-State Current
25 Amp
Gate Trigger Current
2 mA to 25 mA
Off-State Voltage
200 V ÷ 800 V
K
A
G
These series of
Silicon Controlled
Rectifier
use a high performance
PNPN technology.
These parts are intended for general
purpose applications where high gate
sensitivity is required.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL
PARAMETER
On-state Current
Average On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
Reverse Gate Voltage
R.M.S. isolation voltage 50/60 Hz
sinusoidal waveform
PARAMETER
Repetitive Peak Off State
Voltage
CONDITIONS
R
GK
= 1 k
W
CONDITIONS
180º Conduction Angle, T
c
= 110 ºC
Half Cycle,
Q
= 180 º, T
C
= 110 ºC
Half Cycle, 60 Hz
Half Cycle, 50 Hz
t
p
= 10ms, Half Cycle
20 µs max.
20 µs max.
20ms max.
Value
25
16
300
270
364
4
20
1
(-40
to
+125)
(-40
to
+150)
260
5
2.500
VOLTAGE
B
D M
S
N
200 400 600 700 800
Unit
A
A
A
A
A
2
s
A
W
W
ºC
ºC
ºC
V
Vac
Unit
V
I
T(RMS)
I
T(AV)
I
TSM
I
TSM
I
2
t
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
sld
V
RGM
v
iso
SYMBOL
10s max.
V
DRM
V
RRM
Apr - 05
FS2510.W
STANDARD SCR
Electrical Characteristics
SYMBOL
PARAMETER
Gate Trigger Current
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
CONDITIONS
V
D
= 12 V
DC
, R
L
= 140
W
. T
j
= 25 ºC
MIN
MAX
SENSITIVITY
10
2
25
1.3
0.2
40
60
500
Uni
mA
V
V
mA
mA
V/µs
A/µs
V
V
m
W
mA
µA
ºC/W
ºC/W
I
GT
V
GT
V
GD
I
H
I
L
dV / dt
dI / dt
V
TM
V
t (o)
r
d
I
DRM
/ I
RRM
R
th(j-c)
R
th(j-a)
V
D
= 12 V
DC
, R
L
= 140
W
, T
j
= 25 ºC MAX
V
D
= V
DRM
, R
L
= 3.3k
W
, R
GK
= 220
W
MIN
T
j
= 125 ºC
I
T
= 500 mA,
I
G
= 1.2 I
GT
MAX
MAX
MIN
MIN
Critical Rate of Voltage Rise V
D
= 0.67 x V
DRM
, Gate open
T
j
= 125 ºC
Critical Rate of Current Rise I
G
= 2 x I
GT
tr
£
100 ns, f = 60 Hz,
T
j
= 125 ºC
On-state Voltage
Threshold Voltage
Dynamic resistance
Off-State Leakage Current
Thermal Resistance
Junction-Case for DC
Thermal Resistance
Junction-Amb for DC
T
j
= 125 ºC
T
j
= 125 ºC
V
D
= V
DRM
, R
GK
= 1k
W
V
R
= V
RRM
,
T
j
= 125 ºC
T
j
= 25 ºC
100
1.5
0.75
16.5
2
5
2.5
50
at I
T
= 50 Amp, tp = 380 µs, T
j
= 25 ºC MAX
MAX
MAX
MAX
MAX
for AC 360 º conduction angle
S =1cm 2
PART NUMBER INFORMATION
F
FAGOR
SCR
CURRENT
CASE
VOLTAGE
SENSITIVITY
S
25
10
B
W 00
TU
PACKAGING
FORMING
Apr - 05
FS2510.W
STANDARD SCR
Fig. 1: Maximum average power dissipation
versus average on-state current.
P (W)
Fig. 2: Average and D.C. on-state current
versus case temperature.
IT(av)(A)
25
20
15
10
5
28
24
20
16
12
8
4
0
IT(av)(A)
0 2 4 6 8 10 12 14 16 18 20
0
Tc (ºC)
0
25
50
75
100
125
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
K = [Zth(j-c) / Rth (j-c)]
Fig. 4: Relative variation of gate trigger
current, holding and latching current versus
junction temperature.
2.0
1.8
1.6
IGT
1.0
IGT, IH (Tj) / IGT, IH (Tj = 25 ºC)
0.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IH & IL
0.2
0.1
tp (s)
1E+0
0.0
-40 -20 0
20 40 60
Tj (ºC)
80 10 120 140
Fig. 5: Non repetitive surge peak on-state
current versus number of cycles.
320
280
240
200
160
120
80
40
0
1
10
100
1000
I TSM
Tj initial = 25 ºC
f = 50 Hz
Fig. 6: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp < 10 ms, and corresponding value of I
2
t.
ITSM(A). I
2
t (A
2
s)
Tj initial = 25 ºC
ITSM
I
2
t
100
Number of cycles
10
1
10
tp(ms)
Apr - 05
FS2510.W
STANDARD SCR
Fig. 7: On-state characteristics (maximum
values).
200
100
ITM (A)
10
Tj max
Tj = 25 ºC
Tj max
Vto = 0.55 V
Rt = 25mW
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VTM (V)
PACKAGE MECHANICAL DATA
TO220-F
REF.
A
B
D
E
F
F1
F2
G
G1
H
L
L1
L3
L6
L7
Diam.
Min.
3.55
2.34
2.03
0.35
0.25
0.70
0.70
4.88
2.34
9.65
12.70
2.93
26.90
14.22
8.30
3.00
DIMENSIONS
Milimeters
Nominal
Max.
4.50
3.00
2.70
0.60
0.60
1.30
1.70
5.00
2.50
10.15
13.35
3.75
28.35
15.00
8.40
3.20
4.90
3.70
2.96
0.70
1.01
1.78
1.78
5.28
2.74
10.67
14.73
6.35
31.20
16.50
9.59
3.28
Apr - 05
