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FSB50550A / FSB50550AT Motion SPM® 5 Series
January 2014
FSB50550A / FSB50550AT
Motion SPM
®
5 Series
Features
• UL Certified No. E209204 (UL1557)
• 500 V R
DS(on)
= 1.4
Max
FRFET MOSFET 3-Phase
Inverter with Gate Drivers and Protection
• Built-In Bootstrap Diodes Simplify PCB Layout
• Separate Open-Source Pins from Low-Side MOSFETs
for Three-Phase Current-Sensing
• Active-HIGH Interface, Works with 3.3 / 5 V Logic,
Schmitt-trigger Input
• Optimized for Low Electromagnetic Interference
• HVIC Temperature-Sensing Built-In for Temperature
Monitoring
• HVIC for Gate Driving and Under-Voltage Protection
• Isolation Rating: 1500 V
rms
/ min.
• RoHS Compliant
Related Source
•
RD-FSB50450A - Reference Design for Motion SPM 5
Series Ver.2
• AN-9082 - Motion SPM5 Series Thermal Performance
by Contact Pressure
• AN-9080 - User’s Guide for Motion SPM 5 Series V2
General Description
The FSB50550A/AT is an advanced Motion SPM
®
5
module providing a fully-featured, high-performance
inverter output stage for AC Induction, BLDC and PMSM
motors. These modules integrate optimized gate drive of
the built-in MOSFETs (FRFET
®
technology) to minimize
EMI and losses, while also providing multiple on-module
protection features including under-voltage lockouts and
thermal
monitoring.
The
built-in
high-speed
HVIC requires only a single supply voltage and
translates the incoming logic-level gate inputs to the
high-voltage, high-current drive signals required to
properly drive the module's internal MOSFETs.
Separate open-source MOSFET terminals are available
for each phase to support the widest variety of control
algorithms.
Applications
• 3-Phase Inverter Driver for Small Power AC Motor
is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM
®
5 product. V
PN
should be sufficiently less than this
value considering the effect of the stray inductance so that V
PN
should not exceed BV
DSS
in any case.
2. t
ON
and t
OFF
include the propagation delay of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field
applications due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7.
3. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating Area (SOA). Please see Figure 7 for the RBSOA test
circuit that is same as the switching test circuit.
4. V
ts
is only for sensing-temperature of module and cannot shutdown MOSFETs automatically.
5. Built-in bootstrap diode includes around 15
Ω
resistance characteristic. Please refer to Figure 2.
