FSBB20CH60B Smart Power Module
June 2007
FSBB20CH60B
Smart Power Module
Features
• UL Certified No.E209204(SPM27-CC package)
• Very low thermal resistance due to using DBC
• Easy PCB layout due to built in bootstrap diode
• 600V-20A 3-phase IGBT inverter bridge including control ICs
for gate driving and protection
• Divided negative dc-link terminals for inverter current sensing
applications
• Single-grounded power supply due to built-in HVIC
• Isolation rating of 2500Vrms/min.
Motion-SPM
General Description
TM
It is an advanced motion-smart power module (Motion-SPM
TM
)
that Fairchild has newly developed and designed to provide
very compact and high performance ac motor drives mainly tar-
geting low-power inverter-driven application like air conditioner
and washing machine. It combines optimized circuit protection
and drive matched to low-loss IGBTs. System reliability is fur-
ther enhanced by the integrated under-voltage lock-out and
short-circuit protection. The high speed built-in HVIC provides
opto-coupler-less single-supply IGBT gate driving capability that
further reduce the overall size of the inverter system design.
Each phase current of inverter can be monitored separately due
to the divided negative dc terminals.
Applications
• AC 100V ~ 253V three-phase inverter drive for small power
ac motor drives
• Home appliances applications like air conditioner and wash-
ing machine
Top View
Bottom View
44mm
26.8mm
Figure 1.
©2007 Fairchild Semiconductor Corporation
1
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FSBB20CH60B Rev. C
FSBB20CH60B Smart Power Module
Integrated Power Functions
• 600V-20A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figures 12 and 13.
• For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)
Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to UV (Low-side supply) and SC faults
• Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Top View
Figure 2.
2
FSBB20CH60B Rev. C
www.fairchildsemi.com
FSBB20CH60B Smart Power Module
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
Pin Name
V
CC(L)
COM
IN
(UL)
IN
(VL)
IN
(WL)
V
FO
C
FOD
C
SC
IN
(UH)
V
CC(H)
V
B(U)
V
S(U)
IN
(VH)
V
CC(H)
V
B(V)
V
S(V)
IN
(WH)
V
CC(H)
V
B(W)
V
S(W)
N
U
N
V
N
W
U
V
W
P
Common Supply Ground
Signal Input for Low-side U Phase
Signal Input for Low-side V Phase
Signal Input for Low-side W Phase
Fault Output
Pin Description
Low-side Common Bias Voltage for IC and IGBTs Driving
Capacitor for Fault Output Duration Time Selection
Capacitor (Low-pass Filter) for Short-Current Detection Input
Signal Input for High-side U Phase
High-side Common Bias Voltage for IC and IGBTs Driving
High-side Bias Voltage for U Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving
Signal Input for High-side V Phase
High-side Common Bias Voltage for IC and IGBTs Driving
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
Signal Input for High-side W Phase
High-side Common Bias Voltage for IC and IGBTs Driving
High-side Bias Voltage for W Phase IGBT Driving
High-side Bias Voltage Ground for W Phase IGBT Driving
Negative DC–Link Input for U Phase
Negative DC–Link Input for V Phase
Negative DC–Link Input for W Phase
Output for U Phase
Output for V Phase
Output for W Phase
Positive DC–Link Input
3
FSBB20CH60B Rev. C
www.fairchildsemi.com
FSBB20CH60B Smart Power Module
Internal Equivalent Circuit and Input/Output Pins
P (27)
(19) V
B(W)
(18) V
CC(H)
(17) IN
(WH)
(20) V
S(W)
(15) V
B(V)
(14) V
CC(H)
(13) IN
(VH)
(16) V
S(V)
(11) V
B(U)
(10) V
CC(H)
(9) IN
(UH)
(12) V
S(U)
VB
VCC
COM
IN
OUT
VS
W (26)
VB
VCC
COM
IN
OUT
VS
V (25)
VB
VCC
COM
IN
OUT
VS
U (24)
(8) C
SC
(7) C
FOD
(6) V
FO
C(SC) OUT(WL)
C(FOD)
VFO
IN(WL) OUT(VL)
IN(VL)
IN(UL)
COM
OUT(UL)
V
SL
N
U
(21)
N
V
(22)
N
W
(23)
(5) IN
(WL)
(4) IN
(VL)
(3) IN
(UL)
(2) COM
(1) V
CC(L)
VCC
Note:
1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT and one control IC. It has gate drive and protection functions.
2. Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals.
3. Inverter high-side is composed of three IGBTs, freewheeling diodes and three drive ICs for each IGBT.
Figure 3.
4
FSBB20CH60B Rev. C
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FSBB20CH60B Smart Power Module
Absolute Maximum Ratings
(T
J
= 25°C,
Inverter Part
Symbol
V
PN
V
PN(Surge)
V
CES
± I
C
± I
CP
P
C
T
J
Note:
Unless Otherwise Specified)
Parameter
Supply Voltage
Supply Voltage (Surge)
Collector-emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Collector Dissipation
Operating Junction Temperature
T
C
= 25°C
Conditions
Applied between P- N
U
, N
V
, N
W
Applied between P- N
U
, N
V
, N
W
Rating
450
500
600
20
40
62
-40 ~ 150
Units
V
V
V
A
A
W
°C
T
C
= 25°C, Under 1ms Pulse Width
T
C
= 25°C per One Chip
(Note 1)
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C(@T
C
≤
125°C).
Control Part
Symbol
V
CC
V
BS
V
IN
V
FO
I
FO
V
SC
Parameter
Control Supply Voltage
High-side Control Bias
Voltage
Input Signal Voltage
Fault Output Supply Voltage
Fault Output Current
Current Sensing Input Voltage
Conditions
Applied between V
CC(H)
, V
CC(L)
- COM
Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
,
V
B(W)
- V
S(W)
Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
,
IN
(UL)
, IN
(VL)
, IN
(WL)
- COM
Applied between V
FO
- COM
Sink Current at V
FO
Pin
Applied between C
SC
- COM
Rating
20
20
-0.3~17
-0.3~V
CC
+0.3
5
-0.3~V
CC
+0.3
Units
V
V
V
V
mA
V
Bootstrap Diode Part
Symbol
V
RRM
I
F
I
FP
T
J
Parameter
Maximum Repetitive Reverse Voltage
Forward Current
Forward Current (Peak)
Operating Junction Temperature
T
C
= 25°C
Conditions
Rating
600
0.5
2
-40 ~ 150
Units
V
A
A
°C
T
C
= 25°C, Under 1ms Pulse Width
Total System
Symbol
V
PN(PROT)
T
C
T
STG
V
ISO
Parameter
Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
V
CC
= V
BS
= 13.5 ~ 16.5V
T
J
= 150°C, Non-repetitive, less than 2μs
-40°C≤ T
J
≤
150°C, See Figure 2
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to heat sink plate
Rating
400
-40 ~ 125
-40 ~ 150
2500
Units
V
°C
°C
V
rms
Thermal Resistance
Symbol
R
th(j-c)Q
R
th(j-c)F
Note:
2. For the measurement point of case temperature(T
C
), please refer to Figure 2.
Parameter
Junction to Case Thermal
Resistance
Conditions
Inverter IGBT part (per 1/6 module)
Inverter FWD part (per 1/6 module)
Min.
-
-
Typ. Max. Units
-
-
2.0
3.0
°C/W
°C/W
5
FSBB20CH60B Rev. C
www.fairchildsemi.com
工控电子
