FST16020 thru FST16040
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types up to 100V V
RRM
• Isolated to Plate
TO-249AB Package
V
RRM
= 20 V - 100 V
I
F
= 160 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Repetitive p
p
peak reverse voltage
g
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
≤
100 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
FST16020
20
14
20
160
1200
-40 to 125
-40 to 175
FST16030
30
21
30
160
1200
-40 to 125
-40 to 175
FST16035
35
25
35
160
1200
-40 to 125
-40 to 175
FST16040
40
28
40
160
1200
-40 to 125
-40 to 175
Unit
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 160 A, T
j
= 25 °C
V
R
= 20 V, T
j
= 25 °C
V
R
= 20 V, T
j
= 125 °C
FST16020
0.75
1
10
FST16030
0.75
1
10
FST16035
0.75
1
10
FST16040
0.75
1
10
Unit
V
mA
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
1.0
1.0
1.0
1.0
°C/W
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FST16020 thru FST16040
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