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FT0408BI00TU

4 Quadrant Logic Level TRIAC, 200V V(DRM), 4A I(T)RMS, TO-251AA, PLASTIC, IPAK-3

器件类别:模拟混合信号IC    触发装置   

厂商名称:Fagor Electrónica

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Fagor Electrónica
零件包装代码
TO-251AA
包装说明
FLANGE MOUNT, R-PSFM-T3
针数
3
Reach Compliance Code
not_compliant
ECCN代码
EAR99
外壳连接
MAIN TERMINAL 2
配置
SINGLE
关态电压最小值的临界上升速率
100 V/us
最大直流栅极触发电流
10 mA
最大直流栅极触发电压
1.3 V
最大维持电流
15 mA
JEDEC-95代码
TO-251AA
JESD-30 代码
R-PSFM-T3
JESD-609代码
e3
最大漏电流
1 mA
湿度敏感等级
1
元件数量
1
端子数量
3
最高工作温度
125 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大均方根通态电流
4 A
断态重复峰值电压
200 V
表面贴装
NO
端子面层
TIN
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
触发设备类型
4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches
1
文档预览
FT04...I
LOGIC LEVEL TRIAC
IPAK
(Plastic)
On-State Current
4 Amp
Gate Trigger Current
<
5 mA to < 10 mA
Off-State Voltage
200 V ÷ 600 V
MT2
MT1
MT2
G
This series of
TRIACs
uses a high
performance PNPN technology.
These parts are intended for general
purpose applications where logic
compatible gate sensitivity is required, like
touch dimmers, fan, electrovalve control.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL
PARAMETER
RMS On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Critical rate of rise of on-state current
Critical rate of rise of on-state current
Operating Temperature
Storage Temperature
Lead Temperature for Soldering
PARAMETER
Repetitive Peak Off State
Voltage
B
200
CONDITIONS
All Conduction Angle, T
C
= 75 ºC
Ta = 25 ºC
Half Cycle, 60 Hz
Half Cycle, 50 Hz
t = 10 ms, Half Cycle
20 µs max.
20 µs max.
20 ms max.
I
G
= 50 mA, di
G
/dt = 0.1 A/µs
Repetitive f = 50 Hz
I
G
= 50 mA, di
G
/dt = 0.1 A/µs
Non Repetitive
Min.
4
0.95
22
20
2
1.2
3
0.2
10
50
-40
-40
4.5 mm from case, 10s max.
VOLTAGE
D
400
M
600
+125
+150
260
Max.
Unit
A
A
A
A
2
s
A
W
W
A/µs
A/µs
ºC
ºC
ºC
Unit
V
I
T(RMS)
I
TSM
I
TSM
I
2
t
I
GM
P
GM
P
G(AV)
di/dt
di/dt
T
j
T
stg
T
L
SYMBOL
V
DRM
V
RRM
Jan - 02
FT04...I
LOGIC LEVEL TRIAC
Electrical Characteristics
SYMBOL
PARAMETER
Gate Trigger Current
CONDITIONS
V
D
= 12 V
DC
, R
L
= 33Ω, T
j
= 25 ºC
Quadrant
SENSITIVITY
07
5
7
200
5
2
1.3
0.2
10
10
15
20
1
10
7.5
100
15
15
25
50
2
08
10
Unit
mA
µA
V
V
V
mA
mA
V/µs
V/µs
ºC/W
ºC/W
I
GT
I
DRM
/I
RRM
Off-State Leakage Current
V
TM
*
V
GT
V
GD
I
H
*
I
L
dv / dt*
On-state Voltage
Gate Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
Q1÷Q3 MAX
MAX
Q4
MAX
V
D
= V
DRM
, R
GK
= 1KΩ, T
j
= 110 ºC
V
R
= V
RRM
,
T
j
= 25 ºC
MAX
MAX
I
T
= 5.5 Amp, tp = 380 µs, T
j
= 25 ºC
Q1÷Q4 MAX
V
D
= 12 V
DC
, R
L
= 33Ω, T
j
= 25 ºC
V
D
= V
DRM
, R
L
= 3.3KΩ, T
j
= 125 ºC Q1÷Q4 MIN
MAX
I
T
= 50 mA , Gate open, T
j
= 25 ºC
I
G
= 1.2 I
GT
, T
j
= 25 ºC
Q1,Q3,Q4 MAX
MAX
Q2
V
D
= 0.67 x V
DRM
, Gate open
MIN
T
j
= 110 ºC
(di/dt)c = 1.3 A/ms, T
j
= 110 ºC
for DC
for AC 360º conduction angle (f = 50 Hz)
MIN
(dv/dt)c*
R
th(j-c)
Thermal Resistance
Junction-Case
R
th(j-a)
Thermal Resistance
Junction-Ambient
* For either polarity of electrode MT2 voltage with reference to electrode MT1.
PART NUMBER INFORMATION
F
FAGOR
SCR
CURRENT
T
04
07
B
I
00
TU
PACKAGING
FORMING
CASE
VOLTAGE
SENSITIVITY
Jan - 02
FT04...I
LOGIC LEVEL TRIAC
Fig. 1: Maximum RMS power dissipation
versus RMS on-state current.
P (W)
7
6
5
4
3
2
α
= 30 º
α
180 º
α
α
= 180 º
Fig. 2: Correlation between maximum
RMS power dissipation and maximum
allowable temperature (Tamb and T case).
P (W)
7
6
Rth (j-c)
T case (ºC)
-75
-85
-95
-105
α
= 120 º
α
= 90 º
5
4
3
2
Rth (j-a)
α
= 60 º
1
0
0
1
2
3
4
IT(RMS)(A)
1
0
0
20
40
60
80
100 120 140
-115
-125 Tamb (ºC)
Fig. 3: RMS on-state current versus case
temperature.
I T(RMS) (A)
1
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
Zth(j-a) / Rth(j-a)
1.00
0.8
α
= 180 º
0.6
0.10
0.4
0.2
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Tamb (ºC)
0.01
1E-3
tp (s)
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.
Igt (Tj)
Igt (Tj = 25 ºC)
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Tj (ºC)
-40 -20 0
20 40 60 80 100 120 140
Ih
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
I TSM (A)
20
Tj initial = 25 ºC
Ih (Tj)
Ih (Tj = 25 ºC)
15
Igt
10
5
0
1
10
100
1000
Number of cycles
Jan - 02
FT04...I
LOGIC LEVEL TRIAC
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp
10 ms, and corresponding value of I
2
t.
ITSM(A). I
2
t (A
2
s)
100
Tj initial = 25 ºC
Tj initial
25 ºC
ITSM
Fig. 8: On-state characteristics (maximum
values).
ITM(A)
100
10
10
1
I t
2
Tj max
Tj max
Vto = 0.98 V
Rt = 0.180Ω
1
1
10
tp(ms)
0.1
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VTM(V)
PACKAGE MECHANICAL DATA
±2º
IPAK TO 251-AA
DIMENSIONS
Milimeters
Nominal
2.3±0.08
1.067±0.01
0.75±0.1
0.95
0.8±0.013
6.1±0.1
6.58±0.14
5.36±0.1
2.28BSC
9.2±0.2
2±0.1
REF.
A
ø1x0.15
E
L3
±2º
±2º
D1
D
H
L1
±2º
c2
E1
±2º
e
b
L
A
A1
b
b1
c
c2
D
D1
E
E1
e
L
L1
L3
Min.
2.19
0.89
0.64
0.76
0.46
5.97
5.21
6.35
5.21
8.89
1.91
0.89
Max.
2.38
1.14
0.89
1.14
0.58
6.22
5.52
6.73
5.46
9.65
2.28
1.27
b1
A1
c
Marking: type number
Weight: 0.2 g
Jan - 02
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参数对比
与FT0408BI00TU相近的元器件有:FT0408MI00TU、FT0407BI00TU、FT0407DI00TU、FT0408DI00TU。描述及对比如下:
型号 FT0408BI00TU FT0408MI00TU FT0407BI00TU FT0407DI00TU FT0408DI00TU
描述 4 Quadrant Logic Level TRIAC, 200V V(DRM), 4A I(T)RMS, TO-251AA, PLASTIC, IPAK-3 4 Quadrant Logic Level TRIAC, 600V V(DRM), 4A I(T)RMS, TO-251AA, IPAK-3 4 Quadrant Logic Level TRIAC, 200V V(DRM), 4A I(T)RMS, TO-251AA, PLASTIC, IPAK-3 4 Quadrant Logic Level TRIAC, 400V V(DRM), 4A I(T)RMS, TO-251AA, IPAK-3 4 Quadrant Logic Level TRIAC, 400V V(DRM), 4A I(T)RMS, TO-251AA, IPAK-3
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合
零件包装代码 TO-251AA TO-251AA TO-251AA TO-251AA TO-251AA
包装说明 FLANGE MOUNT, R-PSFM-T3 IPAK-3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
针数 3 3 3 3 3
Reach Compliance Code not_compliant not_compliant compliant compliant not_compliant
外壳连接 MAIN TERMINAL 2 MAIN TERMINAL 2 MAIN TERMINAL 2 MAIN TERMINAL 2 MAIN TERMINAL 2
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
关态电压最小值的临界上升速率 100 V/us 100 V/us 20 V/us 20 V/us 100 V/us
最大直流栅极触发电流 10 mA 10 mA 7 mA 7 mA 10 mA
最大直流栅极触发电压 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
最大维持电流 15 mA 15 mA 10 mA 10 mA 15 mA
JEDEC-95代码 TO-251AA TO-251AA TO-251AA TO-251AA TO-251AA
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609代码 e3 e3 e3 e3 e3
最大漏电流 1 mA 1 mA 1 mA 1 mA 1 mA
湿度敏感等级 1 1 1 1 1
元件数量 1 1 1 1 1
端子数量 3 3 3 3 3
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大均方根通态电流 4 A 4 A 4 A 4 A 4 A
断态重复峰值电压 200 V 600 V 200 V 400 V 400 V
表面贴装 NO NO NO NO NO
端子面层 TIN TIN TIN TIN TIN
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
触发设备类型 4 QUADRANT LOGIC LEVEL TRIAC 4 QUADRANT LOGIC LEVEL TRIAC 4 QUADRANT LOGIC LEVEL TRIAC 4 QUADRANT LOGIC LEVEL TRIAC 4 QUADRANT LOGIC LEVEL TRIAC
厂商名称 Fagor Electrónica Fagor Electrónica - - Fagor Electrónica
Base Number Matches 1 1 1 1 -
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