FT12...G
LOGIC LEVEL TRIAC
D2PAK
On-State Current
12 Amp
Gate Trigger Current
£
10 mA
MT2
Off-State Voltage
200 V ÷ 800 V
MT1
MT2
G
This series of
TRIACs
uses a high
performance PNPN technology.
MT2
G
MT1
These parts are intended for general
purpose AC switching applications with
highly inductive loads.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL
PARAMETER
RMS On-state Current (full sine wave)
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Gate Current
Average Gate Power Dissipation
Critical rate of rise of on-state current
Operating Temperature
Storage Temperature
CONDITIONS
All Conduction Angle, T
C
= 95 °C
Full Cycle, 60 Hz (t = 16.7 ms)
Full Cycle, 50 Hz (t = 20 ms)
tp = 10 ms, Half Cycle
20 µs max.
T
j
=125 °C
I
G
= 2x I
GT
, tr
£100ns
f= 120 Hz, T
j
=125 °C
T
j
=125 °C
Value
12
132
120
72
4
1
50
(-40 + 125)
(-40 + 150)
Unit
A
A
A
A
2
s
A
W
A/µs
°C
°C
I
T(RMS)
I
TSM
I
TSM
I
2
t
I
GM
P
G(AV)
dI/dt
T
j
T
stg
T
sld
Soldering Temperature
10s max
260
°C
SYMBOL
PARAMETER
Repetitive Peak Off State
Voltage
VOLTAGE
B
200
D
400
M
600
S
700
N
800
Unit
V
V
DRM
V
RRM
Oct - 04
FT12...G
LOGIC LEVEL TRIAC
Electrical Characteristics
SYMBOL
PARAMETER
CONDITIONS
V
D
= 12 V
DC
, R
L
= 33
W,
T
j
= 25 °C
V
D
= 12 V
DC
, R
L
= 33
W
, T
j
= 25 °C
Quadrant
SENSITIVITY Unit
08
09
10
1.3
1.3
0.2
0.2
15
25
30
40
6.5
2.9
-
1.60
0.85
70
1
5
1.3
20
20
25
40
2.5
1.5
-
V
V
m
W
mA
µA
°C/W
10
10
mA
mA
V
V
V
V
mA
mA
mA
mA
V/µs
A/ms
A/ms
MAX
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
Gate Trigger Current
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
Q1÷Q3 MAX
Q4
Q1÷Q3 MAX
Q1÷Q4 MAX
V
D
= V
DRM
, R
L
= 3.3 K
W
, T
j
= 125 °C Q1÷Q3 MIN
Q1÷Q4 MIN
I
T
= 100 mA, Gate open, T
j
= 25 °C
I
G
= 1.2
I
GT
, T
j
= 25 °C
MAX
Q1,Q3 MAX
Q1,Q3,Q4
MAX
MAX
MIN
MIN
MIN
MIN
MAX
MAX
MAX
MAX
MAX
Q2
dV/dt
(2)
Critical Rate of Voltage Rise V
D
= 0.67 x V
DRM
, Gate open
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
(dl/dt)c
(2)
Critical Rate of Current Rise (dv/dt)c =
0.1 V/µs
(dv/dt)c =
10 V/µs
without snubber
V
TM
(2)
V
to
(2)
On-state Voltage
Threshold Voltage
T
j
= 125 °C
T
j
= 125 °C
V
D
= V
DRM
,
V
R
= V
RRM
,
I
T
= 17 Amp, tp = 380 µs, T
j
= 25 °C
Dynamic resistance
r
d
(2)
I
DRM
/I
RRM
Off-State Leakage Current
T
j
= 125 °C
T
j
= 25 °C
R
th(j-c)
R
th(j-a)
Thermal Resistance
Junction-Case
Thermal Resistance
Junction-Ambient
for AC 360° conduction angle
S = 1cm
2
45
°C/W
(1) Minimum I
GT
is guaranted at 5% of I
GT
max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
PART NUMBER INFORMATION
F
FAGOR
TRIAC
CURRENT
T
12
08
B
G
00 TU
PACKAGING
FORMING
CASE
VOLTAGE
SENSITIVITY
Oct - 04
FT12...G
LOGIC LEVEL TRIAC
Fig. 1: Maximum power dissipation versus
RMS on-state curren (full cycle).
P (W)
16
14
12
10
8
6
4
2
0
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Fig. 2: RMS on-state current versus
case temperature (full cycle).
I T(RMS) (A)
IT(RMS)(A)
0 1 2 3 4 5 6 7 8 9 10 11 12
Tc (°C)
0
25
50
75
100
125
Fig. 3: Relative variation of thermal
impedance versus pulse duration.
K=[Zth / Rth]
1E+0
Zth(j-c)
Fig. 4: On-state characteristics (maximum
values)
ITM(A)
200
100
T
j
max
1E-1
Zth(j-a)
10
T
j
= 25 °C
1E-2
1E-3
tp (s)
1E-2
1E-1
1E+0 1E+1 1E+2 5E+2
T
j
max
Vto = 0.55 V
Rd = 25 mW
1
VTM(V)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Fig. 5: Surge peak on-state current
versus number of cycles
I TSM (A)
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
2
tp<10ms, and corresponding value of I t.
130
120
110
100
90
80
70
60
50
40
30
20
10
0
10000
t=20ms
One cycle
ITSM(A). I
2
t (A
2
s)
T
j
initial = 25 °C
1000
I
TSM
I
2
t
100
1
10
100
Number of cycles
1000
10
tp(ms)
1
10
Oct - 04
FT12...G
LOGIC LEVEL TRIAC
Fig. 7: Relative variation of gate trigger
current, holding current and latching versus
junction temperature (typical values)
IGT,IH,IL[Tj]/IGT,IH,IL.[Tj=25ºC]
2.5
Fig. 8: Relative variation of critical rate of
decrease of main current versus junction
temperature
6
5
(dI/dt)c [Tj]/(dI/dc)c [Tj specified]
Fig. 9: Relative variation of critical rate
of decrease of main current versus
(dV/dt)c (typical values).
2.0
1.8
1.6
2.0
I
GT
4
1.5
I
H
&I
L
1.4
1.2
1.0
0.8
3
2
1.0
0.5
1
0
0.6
T
j
(°C)
0
25
50
75
100
125
(dV/dt)c (V/µS)
Tj(°C)
0
-40 -20 0 20 40 60 80 100 120140
0.4
0.1
1.0
10.0
100.0
PACKAGE MECHANICAL DATA
D2PAK
A
L2
E
C2
REF.
DIMENSIONS
Milimeters
Nominal
4.45
2.50
0.10
0.90
1.03
0.45
1.23
9.00
10.25
5.15
15.40
1.27
1.55
3.00
0.40 typ
D
A1
L
L3
R
B
B2
G
C
A2
V2
*
FLAT ZONE NO LESS THAN 2mm
16.9
A
A1
A2
B
B2
C
C2
D
E
G
L
L2
L3
M
R
V2
Min.
4.40
2.49
0.03
0.70
1.14
0.45
1.23
8.95
10.00
4.88
15.00
1.27
1.40
2.40
0º
Max.
4.60
2.69
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
1.40
1.75
3.20
8º
M
*
10.3
8.9
3.7
NOTE: LIMITING VALUES AND LIFE SUPPORT APPLICATIONS (SEE WEB PAGE).
1.3
5.08
Oct - 04
