High Speed 32Kx8 Static CMOS Ram
FEATURES
High Speed (Equal Access and Cycle Times)
– 12/15/20/25/35 ns (Commercial)
– 15/20/25/35/45 ns (Industrial)
– 20/25/35/45/55/70 ns (Military)
Low Power
Single 5V±10% Power Supply
Easy Memory Expansion Using
CE
and
OE
Inputs
Common Data I/O
Three-State Outputs
Fully TTL Compatible Inputs and Outputs
Advanced CMOS Technology
Fast t
OE
Automatic Power Down
Packages
– 28-Pin 300 mil DIP, SOJ, TSOP
– 28-Pin 300 mil Ceramic DIP
– 28-Pin 600 mil Plastic and Ceramic DIP
– 28-Pin CERPACK
– 28-Pin Solder Seal Flat Pack
– 28-Pin SOP
– 28-Pin LCC (350 mil x 550 mil)
– 32-Pin LCC (450 mil x 550 mil)
FT61256
DESCRIPTION
FT6
s
CE
WE
14
-
OE)
s
FT6
CE
OE
WE
FT6
FT6
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATIONS
DIP (P5, P6, C5, C5-1, D5-1, D5-2), SOJ (J5), SOP (S11-1, S11-3)
CERPACK (F4, FS-5) SIMILAR
2010
1/16
Rev 1.8
FT61256
MAXIMUM RATINGS
(1)
Sym
CC
RECOMMENDED OPERATING CONDITIONS
Value
Unit
Grade
(2)
Ambient Temp
GND
V
CC
Parameter
TERM
T
A
T
T
P
T
I
°C
°C
°C
CAPACITANCES
(4)
CC
A
Sym
C
C
Parameter
Conditions
Typ
Unit
DC ELECTRICAL CHARACTERISTICS
(2)
Sym Parameter
Test Conditions
FT61256
Min
Max
CC
(3)
FT61256L
Unit
Min
Max
CC
(3)
IL
CC
(3)
LC
CC
CC
(3)
CC
OL
Load)
Load)
I
OL
I
CC
CC
MIL
-5
µA
-5
I
LI
CC
CC
I
LO
CC
CE
CC
,
MIL
-5
µA
-5
CE
I
MIL
CC
—
—
45
—
—
—
—
CE
I
LC
CC
MIL
—
—
2010
2/16
Rev 1.8
FT61256
DATA RETENTION CHARACTERISTICS (FT61256L Military Temperature Only)
Sym
Parameter
Test Conditions
Min
Typ* V
CC
=
2.0V
DR
CC
Max V
CC
=
2.0V
3.0V
Unit
3.0V
I
CCDR
CDR
†
R
CE
15
CC
CC
§
RC
µA
* T
A
RC
DATA RETENTION WAVEFORM
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Sym
I
CC
Parameter
Temperature Range
-12
-15
-20
155
165
165
CC
-25
-35
145
155
-45
-55
-70
Unit
155
IL
CE
,
OE
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(2)
CC
-12
Sym
Parameter
Min
RC
-15
Min
Max
-20
Min
Max
-25
Min
Max
-35
Min
Max
-45
Min
Max
-55
Min
Max
-70
Unit
Min
Max
Max
12
12
12
2
2
5
5
15
15
15
2
2
2
2
9
9
25
25
25
3
3
11
35
35
35
3
3
15
15
45
45
45
3
3
55
55
55
3
3
25
25
3
3
AA
AC
OE
5
9
11
15
25
PD
12
15
25
35
2010
3/16
Rev 1.8
FT61256
TIMING WAVEFORM OF READ CYCLE NO. 1 (OE CONTROLLED)
(5)
TIMING WAVEFORM OF READ CYCLE NO. 2 (ADDRESS CONTROLLED)
(5,6)
TIMING WAVEFORM OF READ CYCLE NO. 3 (CE CONTROLLED)
Notes:
WE
CE
OE
CE
IL
and I
IL
2010
4/16
Rev 1.8
FT61256
AC CHARACTERISTICS—WRITE CYCLE
(2)
CC
Sym
Parameter
-12
Min
Max
-15
Min
Max
-20
Min
Max
-25
Min
Max
-35
Min
Max
-45
Min
Max
-55
Min
Max
-70
Min
Max
Unit
12
9
9
AS
15
15
15
25
35
22
25
45
55
35
35
45
9
11
15
22
25
35
9
11
13
15
25
11
3
3
3
3
3
15
3
3
25
3
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE CONTROLLED)
(10,11)
CE
and
WE
OE
CE
WE
2010
5/16
Rev 1.8
