Pb Free Plating Product
CORPORATION
G2307
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2004/11/02
REVISED DATE :2005/10/13C
BV
DSS
R
DS(ON)
I
D
-16V
60m
-4.0A
The G2307 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The G2307 is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Description
Applications
&
Power Management in Notebook Computer
&Portable Equipment
&Battery Powered System.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current
Continuous Drain Current
3
Pulsed Drain Current
1
Power Dissipation
Linear Derating Factor
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Symbol
Rthj-a
Operating Junction and Storage Temperature Range
Ratings
-16
f 8
-4.0
-3.3
-12
1.38
0.01
-55 ~ +150
Ratings
90
Unit
V
V
A
A
A
W
W/ :
:
Unit
:
/W
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
1/4
CORPORATION
Electrical Characteristics (Tj = 25 : Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
ISSUED DATE :2004/11/02
REVISED DATE :2005/10/13C
Symbol
BV
DSS
BV
DSS
/ Tj
V
GS(th)
Min.
-16
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.01
-
12
-
-
-
-
-
15
1.3
4
8
11
54
36
985
180
160
Max.
-
-
-1.0
-
±100
-1
-25
60
70
90
24
-
-
-
-
-
-
1580
-
-
Unit
V
V/ :
V
S
nA
uA
uA
m
Test Conditions
V
GS
=0, I
D
=-250uA
Reference to 25 : , I
D
=-1mA
V
DS
= V
GS
, I
D
=-250uA
V
DS
=-5.0V, I
D
=-4.0A
V
GS
= ±8V
V
DS
=-16V, V
GS
=0
V
DS
=-12V, V
GS
=0
I
D
=-4.0A, V
GS
=-4.5V
I
D
=-3.0A, V
GS
=-2.5V
I
D
=-2.0A, V
GS
=-1.8V
I
D
=-4.0A
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
Static Drain-Source On-Resistance
2
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
g
fs
I
GSS
I
DSS
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
nC
V
DS
=-12V
V
GS
=-4.5V
V
DS
=-10V
I
D
=-1A
V
GS
=-10V
R
G
=3.3
R
D
=10
V
GS
=0V
V
DS
=-15V
f=1.0MHz
ns
pF
Source-Drain Diode
Forward On Voltage
2
Reverse Recovery Time
2
V
SD
T
rr
Q
rr
-
-
-
-
39
26
-1.2
-
-
V
ns
nC
I
S
=-1.2A, V
GS
=0
I
S
=-4.0A, V
GS
=0
dI/dt=100A/us
Reverse Recovery Charge
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board; 270 : /W when mounted on min. copper pad.
Characteristics Curve
2/4
CORPORATION
ISSUED DATE :2004/11/02
REVISED DATE :2005/10/13C
3/4
CORPORATION
ISSUED DATE :2004/11/02
REVISED DATE :2005/10/13C
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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