G2SBA20, G2SBA60, G2SBA80
www.vishay.com
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• Typical I
R
less than 0.1 μA
~
~
• High case dielectric strength
~
~
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
Case Type
GBL
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 0.75 V
T
J
max.
Diode variations
GBL
1.5 A
200 V, 600 V, 800 V
60 A
5 μA
1.0 V
150 °C
In-Line
General purpose use in AC/DC bridge full wave rectification
for monitor, TV, printer, SMPS, adapter, audio equipment,
and home appliances applications.
MECHANICAL DATA
Case:
GBL
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked on body
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified output current
at T
A
= 25 °C
Peak forward surge current single sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
G2SBA20
200
140
200
G2SBA60
600
420
600
1.5
60
15
- 55 to + 150
G2SBA80
800
560
800
UNIT
V
V
V
A
A
A
2
s
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward
voltage drop per diode
Maximum DC reverse current at
rated DC blocking voltage per diode
TEST CONDITIONS
0.75 A
T
A
= 25 °C
T
A
= 125 °C
SYMBOL
V
F
I
R
G2SBA20
G2SBA60
1.00
5.0
300
G2SBA80
UNIT
V
μA
Revision: 16-Aug-13
Document Number: 88604
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
G2SBA20, G2SBA60, G2SBA80
www.vishay.com
Vishay General Semiconductor
SYMBOL
R
JA
R
JC
G2SBA20
G2SBA60
40
12
G2SBA80
UNIT
°C/W
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
Note
• Unit mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
ORDERING INFORMATION
(Example)
PREFERRED P/N
G2SBA60-E3/45
G2SBA60-E3/51
UNIT WEIGHT (g)
2.017
2.017
PREFERRED PACKAGE CODE
45
51
BASE QUANTITY
20
400
DELIVERY MODE
Tube
Anti-static PVC tray
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
2.0
100
P.C.B. Mounting, T
A
1.5
Instantaneous Forward Current (A)
Average Forward Output (I
F(AV)
)
10
1.0
1
0.5
0.1
0
0
25
50
75
100
125
150
0.01
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 -
Derating Curve Output Rectified Current
Fig. 3 -
Typical Forward Characteristics Per Diode
100
100
Instantaneous Reverse Current (µA)
Peak Forward Surge Current (A)
80
T
A
= 125 °C
10
60
1
40
0.1
T
A
= 25 °C
0.01
20
1.0 Cycle
0
1
10
100
0
20
40
60
80
100
Number
of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 -
Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 4 -
Typical Reverse Characteristics Per Diode
Revision: 16-Aug-13
Document Number: 88604
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
G2SBA20, G2SBA60, G2SBA80
www.vishay.com
Vishay General Semiconductor
100
100
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
10
10
1
0.1
1
0.1
1
10
100
0.01
0.01
0.1
1
10
100
Reverse Voltage (V)
t - Heating Time (s)
Fig. 5 -
Typical Junction Capacitance Per Diode
Fig. 6 -
Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case Type GBL
0.125 (3.17) x 45°
Chamfer
0.825 (20.9)
0.815 (20.7)
0.080 (2.03)
0.060 (1.50)
0.421 (10.7)
0.411 (10.4)
0.095 (2.41)
0.080 (2.03)
0.098 (2.5)
0.075 (1.9)
0.050 (1.27)
0.040 (1.02)
0.210 (5.3)
0.190 (4.8)
0.040 (1.02)
0.030 (0.76)
0.022 (0.56)
0.018 (0.46)
0.098 (2.5)
0.075 (1.9)
0.718 (18.2)
0.682 (17.3)
Lead Depth
0.022 (0.56)
0.018 (0.46)
0.140 (3.56)
0.128 (3.25)
Polarity shown on front side of case, positive lead beveled corner
Revision: 16-Aug-13
Document Number: 88604
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 08-Feb-17
1
Document Number: 91000
