PHOTODIODE
InGaAs PIN photodiode
G8421/G8371/G5851 series
Long wavelength type
Features
Applications
l
Long cut-off wavelength: 1.9 µm
l
Optical power meter
l
3-pin TO-18 package: low price
l
Gas analyzer
l
Thermoelectrically cooled TO-18 package: low dark current
l
NIR (near infrared) photometry
l
Active area:
φ0.3
to
φ3
mm
Accessories (Optional)
s
Specifications / Absolute maximum ratings
Di mensional
outline/
Package
Window
material
➀
➁
➂
Active
area
(mm)
φ0.3
φ0.5
φ1
φ3
φ0.3
φ1
φ3
φ0.3
φ1
φ3
l
Heatsink for one-stage TE-cooled type A3179
l
Heatsink for two-stage TE-cooled type A3179-01
l
Temperature controller for TE-cooled type C1103-04
Thermistor
power
dissipation
(mW)
Absolute maximum ratings
Storage
TE-cooler Reverse Operating
allowable voltage temperature temperature
V
R
Topr
Tstg
current
(A)
(V)
(°C)
(°C)
Type No.
Cooling
G8421-03
G8421-05
G8371-01
G8371-03
G5851-103
G5851-11
G5851-13
G5851-203
G5851-21
G5851-23
TO-18
TO-5
TO-8
Non-cooled
-
-
-40 to +85
-55 to +125
One-stage
TE-cooled
Two-stage
TE-cooled
1.5
0.2
1.0
2
-40 to +70
-55 to +85
➃
TO-8
s
Electrical and optical characteristics (Typ. unless otherwise noted)
M easure ment
Peak
Spectral
Photo
Condition
response sensitivity sensitivity
wavelength
S
range
Element
temperature
λp
λ=λp
λ
(°C)
G8421-03
G8421-05
G8371-01
G8371-03
G5851-103
G5851-11
G5851-13
G5851-203
G5851-21
G5851-23
25
(µm)
0.9 to 1.9
(µm)
Cut-off
frequency
Dark current
fc
I
D
V
R
=1 V
V
R
=1 V
R
L
=50
Ω
-3 dB
Min. Typ. Typ.
Max.
(MHz)
(A/W) (A/W) (nA)
(nA)
30
300
100
50
500
80
100
1000
40
2000 20000
3
3
30
100
0.9 1.1
10
100
40
200
2000
3
1.5
15
100
5
50
40
100
1000
3
Terminal
capacitance Shunt
resistance
Ct
Rsh
V
R
=1 V V
R
= 10 m V
f=1 MHz
(pF)
8
20
80
800
8
80
800
8
80
800
(MΩ)
1.5
1
0.5
0.05
15
5
0.5
35
10
1
D
∗
λ=λp
NEP
λ=λp
Type No.
-10
0.9 to 1.87
1.75
-20
0.9 to 1.85
(c m· Hz
1/2
/ W) (W/Hz
1/2
)
9 × 10
-14
1.5 × 10
-13
5 × 10
11
2 × 10
-13
8 × 10
-13
3 × 10
-14
1.5 × 10
12
6 × 10
-14
2 × 10
-13
2 × 10
-14
2.5 × 10
12
4 × 10
-14
1.5 × 10
-13
G8421/G8371/G5851 series may be damaged by Electro Static Discharge, etc. Be carefull when using
G8421/G8371/G5851 series.
1
InGaAs PIN photodiode
s
Spectral response
(Typ.)
1.4
1.2
G8421/G8371/G5851 series
s
Photo sensitivity temperature characteristic
(Typ.)
2
1.0
0.8
T=25 ˚C
TEMPERATURE COEFFICIENT (%/˚C)
PHOTO SENSITIVITY (A/W)
1
0.6
T= -10 ˚C
0.4
0.2
0
0.8
0
T= -20 ˚C
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-1
0.8
1
1.2
1.4
1.6
1.8
2
2.2 2.4
2.6
WAVELENGTH (µm)
KIRDB0221EA
WAVELENGTH (µm)
KIRDB0208EA
s
Dark current vs. reverse voltage
Non-cooled type
10
µA
(Typ. Ta=25 ˚C)
1
µA
G5851-23 (T= -20 ˚C)
TE-cooled type
(Typ.)
G5851-13 (T= -10 ˚C)
1
µA
G8371-03
100 nA
DARK CURRENT
DARK CURRENT
G8371-01
100 nA
G5851-21
(T= -20 ˚C) G5851-11 (T= -10 ˚C)
10 nA
10 nA
G8421-05
G8421-03
1 nA
G5851-103 (T= -10 ˚C)
G5851-203 (T= -20 ˚C)
1 nA
0.01
0.1
1
10
100 pA
0.01
0.1
1
10
REVERSE VOLTAGE (V)
KIRDB0232EA
REVERSE VOLTAGE (V)
KIRDB0223EA
s
Terminal capacitance vs. reverse voltage
10 nF
(Typ. Ta=25 ˚C, f=1 MHz)
s
Shunt resistance vs. element temperature
10 MΩ
(Typ. V
R
=10 mV)
G8421-03
G5851-103/-203
1 MΩ
G8421-05
G8371-03
G5851-13/-23
TERMINAL CAPACITANCE
G8371-01
G5851-11/-21
100 pF
SHUNT RESISTANCE
1 nF
100 kΩ
G8371-01
G5851-11/-21
10 kΩ
G8371-03
G5851-13/-23
1 kΩ
10 pF
G8421-05
G8421-03
G5851-103/-203
1 pF
0.1
1
10
100
Ω
-40
-20
0
20
40
60
80
90
100
REVERSE VOLTAGE (V)
KIRDB0233EA
ELEMENT TEMPERATURE (˚C)
KIRDB0234EA
2
InGaAs PIN photodiode
s
Thermistor temperature characteristic
10
6
G8421/G8371/G5851 series
s
Cooling characteristics of TE-cooler
40
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
(Typ.)
ELEMENT TEMPERATURE (˚C)
20
ONE-STAGE
TE-COOLED TYPE
0
RESISTANCE (Ω)
10
5
-20
10
4
TWO-STAGE
-40 TE-COOLED TYPE
10
3
-60
-40
-20
0
20
0
0.4
0.8
1.2
1.6
ELEMENT TEMPERATURE (˚C)
KIRDB0116EA
CURRENT (A)
KIRDB0231EA
s
Current vs. voltage characteristics of TE-cooler
1.6
1.4
1.2
ONE-STAGE
TE-COOLED TYPE
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
CURRENT (A)
1.0
0.8
0.6
0.4
0.2
0
TWO-STAGE
TE-COOLED TYPE
0
0.2
0.4
0.6
0.8
1.0
1.2
VOLTAGE (V)
KIRDB0115EB
3
InGaAs PIN photodiode
s
Dimensional outlines (unit: mm)
➀
G8421-03/-05, G8371-01
5.4 ± 0.2
G8421/G8371/G5851 series
➁
G8371-03
9.2 ± 0.2
0.15 MAX.
4.7 ± 0.1
2.7 ± 0.2
3.6 ± 0.2
8.1 ± 0.1
2.5 ± 0.2
0.4 MAX.
4.2 ± 0.2
18 MIN.
WINDOW
3.0 ± 0.1
WINDOW
5.9 ± 0.1
13 MIN.
PHOTOSENSITIVE
SURFACE
PHOTOSENSITIVE
SURFACE
0.45
LEAD
5.1 ± 0.3
0.45
LEAD
2.5 ± 0.2
1.5 MAX.
CASE
CASE
KIRDA0150EA
KIRDA0151EA
➂
G5851-103/-11/-13
15.3 ± 0.2
14 ± 0.2
4.4 ± 0.2
6.4 ± 0.2
➃
G5851-203/-21/-23
15.3 ± 0.2
14 ± 0.2
6.7 ± 0.2
10 ± 0.2
12 MIN.
WINDOW
10 ± 0.2
WINDOW
10 ± 0.2
12 MIN.
PHOTOSENSITIVE
SURFACE
0.45
LEAD
10.2 ± 0.2
5.1 ± 0.2
PHOTOSENSITIVE
SURFACE
0.45
LEAD
10.2 ± 0.2
5.1 ± 0.2
5.1 ± 0.2
KIRDA0029EB
5.1 ± 0.2
DETECTOR
(ANODE)
DETECTOR
(CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
DETECTOR
(ANODE)
DETECTOR
(CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
KIRDA0031EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4
Cat. No. KIRD1046E05
May 2006 DN
