PHOTODIODE
GaAs PIN photodiode
G8522 series
High-speed response at low reverse voltage
G8522 series are high-speed PIN photodiodes developed for optical communications and are capable of GHz (gigahertz) operation even at a low
reverse voltage (2 V or less). Please contact our sales office with your specific needs.
Features
Applications
l
High-speed response at low reverse voltage
G8522-01: 3 GHz Min. (V
R
=2 V)
G8522-02: 1.9 GHz Min. (V
R
=2 V)
G8522-03: 1.5 GHz Min. (V
R
=2 V)
l
Low noise, low dark current
l
Low terminal capacitance
l
Optical fiber communications
l
Fiber channels
l
Gigabit Ethernet
s
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
Reverse voltage V
R
Max.
Operating
Topr
temperature
Storage
Tstg
temperature
Value
30
-40 to +85
-55 to +125
Unit
V
°C
°C
s
Electrical and optical characteristics (Ta=25
°C)
Parameter
Active area size
Spectral
response range
Peak sensitivity
wavelength
Photo sensitivity
Dark current
Terminal
capacitance
Cut-off
frequency
Symbol
-
λ
λp
S
I
D
Ct
fc
λ=850
nm
V
R
=5 V
V
R
=2 V, f=1 MHz
V
R
=2 V, R
L
=50
Ω
λ=850
nm, -3 dB
Condition
G8522-01
Min.
Typ.
Max.
-
-
φ40
470 to
-
-
870
-
0.45
-
-
3
850
0.5
2
0.3
-
-
-
50
0.45
-
G8522-02
Min.
Typ.
Max.
-
-
φ80
470 to
-
-
870
-
0.45
-
-
1.9
850
0.5
8
0.45
-
-
-
200
0.65
-
0.45
-
-
1.5
G8522-03
Min.
Typ.
Max.
-
-
φ120
470 to
-
870
850
0.5
20
0.8
-
-
-
500
1.2
-
Unit
µm
nm
nm
A/W
pA
pF
GHz
1
GaAs PIN photodiode
s
Spectral response
0.6
(Typ. Ta=25 ˚C)
G8522 series
s
Dark current vs. reverse voltage
100 pA
(Typ. Ta=25 ˚C)
PHOTO SENSITIVITY
(A/W)
0.5
10 pA
0.4
DARK CURRENT
0.3
1 pA
0.2
100 fA
0.1
0
400
600
800
1000
10 fA
0.01
0.1
1
10
100
WAVELENGTH
(nm)
KGPDB0044EA
REVERSE VOLTAGE (V)
KGPDB0045EA
s
Terminal capacitance vs. reverse voltage
10 pF
(Typ. Ta=25 ˚C)
s
Dimensional outline (unit: mm)
5.4 ± 0.2
4.6 ± 0.1
WINDOW
3.0 ± 0.2
2.7 ± 0.2
0.4 MAX.
TERMINAL CAPACITANCE
G8522-03
1 pF
0.45
LEAD
G8522-02
G8522-01
2.54 ± 0.2
100 fF
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
KGPDB0046EA
1.2 MAX.
CASE
KGPDA0015EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
13 MIN.
PHOTOSENSITIVE
SURFACE
3.6 ± 0.2
2
Cat. No. KGPD1008E01
Jan. 2002 DN
