Section VII: SPICE Model Parameters ......................................................................................................... 12
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
Symbol
V
DS
I
D
I
D
I
G
RBSOA
SCSOA
V
SG
V
SD
P
tot
T
stg
Conditions
V
GS
= 0 V
T
C
= 25°C
T
C
= 145°C
T
VJ
= 175
o
C,
Clamped Inductive Load
T
VJ
= 175
o
C, I
G
= 1 A, V
DS
= 800 V,
Non Repetitive
Value
1200
100
50
3.5
I
D,max
= 50
@ V
DS
≤ V
DSmax
>20
30
25
583 / 116
-55 to 175
Unit
V
A
A
A
A
µs
V
V
W
°C
Notes
Fig. 17
Fig. 17
Fig. 19
T
C
= 25 °C / 145 °C, t
p
> 100 ms
Fig. 16
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Section II: Static Electrical Characteristics
Parameter
Symbol
Conditions
Min.
Value
Typical
Max.
Unit
Notes
A:
On State
Drain – Source On Resistance
Gate – Source Saturation Voltage
DC Current Gain
R
DS(ON)
V
GS,SAT
h
FE
I
D
= 50 A, T
j
= 25 °C
I
D
= 50 A, T
j
= 150 °C
I
D
= 50 A, T
j
= 175 °C
I
D
= 50 A, I
D
/I
G
= 40, T
j
= 25 °C
I
D
= 50 A, I
D
/I
G
= 30, T
j
= 175 °C
V
DS
= 8 V, I
D
= 50 A, T
j
= 25 °C
V
DS
= 8 V, I
D
= 50 A, T
j
= 125 °C
V
DS
= 8 V, I
D
= 50 A, T
j
= 175 °C
20
30
35
3.42
3.23
85
57
51
mΩ
V
–
Fig. 5
Fig. 7
Fig. 4
B: Off State
Drain Leakage Current
Gate Leakage Current
I
DSS
I
SG
V
DS
= 1200 V, V
GS
= 0 V, T
j
= 25 °C
V
DS
= 1200 V, V
GS
= 0 V, T
j
= 150 °C
V
DS
= 1200 V, V
GS
= 0 V, T
j
= 175 °C
V
SG
= 20 V, T
j
= 25 °C
10
20
20
20
μA
nA
Fig. 8
C: Thermal
Thermal resistance, junction - case
R
thJC
0.26
°C/W
Fig. 20
Section III: Dynamic Electrical Characteristics
Parameter
Symbol
Conditions
Value
Typical
Unit
Notes
Min.
Max.
A: Capacitance and Gate Charge
Input Capacitance
Reverse Transfer/Output Capacitance
Output Capacitance Stored Energy
Effective Output Capacitance,
time related
Effective Output Capacitance,
energy related
Gate-Source Charge
Gate-Drain Charge
Gate Charge - Total
C
iss
C
rss
/C
oss
E
OSS
C
oss,tr
C
oss,er
Q
GS
Q
GD
Q
G
V
GS
= 0 V, V
DS
= 800 V,
f
= 1 MHz
V
DS
= 800 V,
f
= 1 MHz
V
GS
= 0 V, V
DS
= 800 V,
f
= 1 MHz
I
D
= constant, V
GS
= 0 V, V
DS
= 0…800 V
V
GS
= 0 V, V
DS
= 0…800 V
V
GS
= -5…3 V
V
GS
= 0 V, V
DS
= 0…800 V
7080
130
50
230
160
60
185
245
pF
pF
µJ
pF
pF
nC
nC
nC
Fig. 9
Fig. 9
Fig. 10
B: Switching
1
Internal Gate Resistance – ON
Turn On Delay Time
Fall Time, V
DS
Turn Off Delay Time
Rise Time, V
DS
Turn On Delay Time
Fall Time, V
DS
Turn Off Delay Time
Rise Time, V
DS
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
1
R
G(INT-ON)
t
d(on)
t
f
t
d(off)
t
r
t
d(on)
t
f
t
d(off)
t
r
E
on
E
off
E
tot
E
on
E
off
E
tot
V
GS
> 2.5 V, V
DS
= 0 V, T
j
= 175 ºC
T
j
= 25 ºC, V
DS
= 800 V,
I
D
= 50 A, Resistive Load
Refer to Section V for additional
driving information.
T
j
= 175 ºC, V
DS
= 800 V,
I
D
= 50 A, Resistive Load
T
j
= 25 ºC, V
DS
= 800 V,
I
D
= 50 A, Inductive Load
Refer to Section V.
T
j
= 175 ºC, V
DS
= 800 V,
I
D
= 50 A, Inductive Load
0.1
15
35
35
20
15
35
40
20
1070
360
1430
1030
320
1350
Ω
ns
ns
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
Fig. 11, 13
Fig. 12, 14
Fig. 11
Fig. 12
Fig. 11, 13
Fig. 12, 14
Fig. 11
Fig. 12
– All times are relative to the Drain-Source Voltage V
DS
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Section IV: Figures
A: Static Characteristics
Figure 1: Typical Output Characteristics at 25 °C
Figure 2: Typical Output Characteristics at 150 °C
Figure 3: Typical Output Characteristics at 175 °C
Figure 4: DC Current Gain vs. Drain Current
Figure 5: On-Resistance vs. Gate Current
Figure 6: Normalized On-Resistance vs. Temperature
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Figure 7: Typical Gate
–
Source Saturation Voltage
Figure 8: Typical Blocking Characteristics
B: Dynamic Characteristics
Figure 9: Input, Output, and Reverse Transfer Capacitance
Figure 10: Energy Stored in Output Capacitance
Figure 11: Typical Switching Times and Turn On Energy
Losses vs. Temperature
Figure 12: Typical Switching Times and Turn Off Energy
Losses vs. Temperature
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Figure 13: Typical Switching Times and Turn On Energy
Losses vs. Drain Current
Figure 14: Typical Switching Times and Turn Off Energy
Losses vs. Drain Current
C: Current and Power Derating
Figure 15: Typical Hard Switched Device Power Loss vs.
2
Switching Frequency
Figure 16: Power Derating Curve
Figure 17: Drain Current Derating vs. Temperature
2
Figure 18: Forward Bias Safe Operating Area at T
c
= 25 C
o
– Representative values based on device conduction and switching loss. Actual losses will depend on gate drive conditions, device load, and circuit topology.
Dec 2015
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