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GBJ602

6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:MIC

厂商官网:http://www.cnmic.com/

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SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER
GBJ6005 THRU GBJ610
FEATURES
VOLTAGE RANGE
CURRENT
50 to
1000
Volts
6.0 Amperes
GBJ
O
19.7-20.3
Plastic package has UL Flammability
Glassification 94V-0
Glass passivated chip junctions
High case dielectric strength of 1500 V
RMS
High surge current capability
High temperature soldering guaranteed
260℃/10 seconds, 0.375”(9.5mm) lead length
29.7-30.3
3.0×45
O
4.4-4.8
3.4-3.8
-3 . 4
.1
φ
3
5.0
Case: molded plastic body
Terminal: Plated leads solderable per MIL-STD-750
Method 2026
Mounting position: Any (Note 3)
Mounting Torque: 6 in
1bs max.
Weight: 0.26 ounce, 7.4 gram
3.8-4.2
17.0-18.0
MECHANICAL DATA
2.5±0.2
2.0-2.4
2.7-3.1
0.9-1.1
9.8-10.2
7.3-7.7 7.3-7.7
0.6-0.8
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load
For capacitive load derate current by 20%
GBJ
SYMBOLS GBJ
6005
601
GBJ
602
GBJ
604
GBJ
606
GBJ
608
GBJ
610
10.8-11.2
UNIT
Volts
Volts
Volts
Amps
Amps
A
2
s
Volts
μA
Maximum Reverse Peak Repetitive Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current, At T
C
=110℃
(Note 1)
Peak Forward Surge Current
8.3ms single half sine wave superimposed on
rated load (JEDEC Method)
Rating for Fusing (t<8.3ms)
Maximum Instantaneous Forward Voltage drop
Per leg at 3.0A
Maximum DC Reverse Current at
rated DC blocking voltage per element
T
A
=25℃
T
A
=125℃
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
I
2
t
V
F
I
R
C
J
R
JA
T
J
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
6.0
150
127
1.0
5.0
500
600
420
600
800
560
800
1000
700
100
Typical Junction Capacitance, per let (Note 4)
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
211.0
35.0
(-55 to +150)
(-55 to +150)
94.0
pF
℃/W
℃/W
Notes:
1. Unit mounted on AL Plate heatsink (100mm×100mm×1.6mm)
2. Unit mounted on P.C.B With 0.5”×0.5”×(12×12mm) copper pads on 0.375”(9.5mm) lead length
3. Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum
Heat transfer with #6 screws
4. Measured at 1.0 MHz and applied reverse voltage of 4.0 V
E-mail:
sales@cnmic.com
Web Site: www.cnmic.com
SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER
GBJ6005 THRU GBJ610
VOLTAGE RANGE
CURRENT
50 to
1000Volts
6.0 Amperes
RATINGS AND CHARACTERISTIC CURVES GBJ6005 THRU GBJ610
FIG. 1- DERATING CURVE
OUTPUT RECTIFIED CURRENT
AVERAGE FORWARD OUTPUT,CURRENT
(
A
)
6.0
FIG. 2- MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT PER LEG
150
100
PEAK FORWARD SURGE,
CURRENT,
(
A
)
Heat-Sink Mounting,Tc
2.6×1.4×0.06"Thk
(
6.5×3.5×0.15cm
)
AL.Plate
Single Sine-Wave
(
JEDEC Method
)
T
J
= 150
100
50
50
60Hz Resistive or Inductive Load
0
0
50
100
150
0
1
1.0 CYCLE
10
100
TEMPERATURE,
FIG. 3- TYPICAL FORWORD CHARACTERISTICS
PER LGE
100
500
100
NUMBER OF CYCLES AT 60 Hz
FIG. 4- TYPICAL REVERSE LEAKAGE
CHARACTERISTICS PER LEG
50-400V
600-1000V
INSTANTANEOUS FORWARD
CURRENT,
(
A
)
INSTANTANEOUS REVERSE
CURRENT,
(
A
)
10
T
J
=125℃
10
1
T
J
=25℃
Pulse width=300μ
1% Duty Cycle
1
0.1
0.1
T
J
=25℃
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
(
V
)
FIG. 5- TYPICAL JUNCTION CAPACITANCE
PER LEG
1000
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,
(
V
)
FIG. 6- TYPICAL TRANSIENT THERMAL
IMPEDANCE
TRANSIENT THERMAL IMPEDANCE
(
℃/W
)
JUNCTION CAPACITANCE,
(
pF
)
T
j
=25℃
f=1.0MHz
Vsig=50mVp-p
10
100
1
10
0.1
50-400V
600-1000V
1
10
100
0.1
0.01
0.1
1
10
100
REVRESE VOLTAGE,
(
V
)
T, HEATING TIME
(
SEC.
)
E-mail:
sales@cnmic.com
Web Site: www.cnmic.com
查看更多>
参数对比
与GBJ602相近的元器件有:GBJ601、GBJ6005、GBJ604、GBJ610、GBJ608、GBJ606。描述及对比如下:
型号 GBJ602 GBJ601 GBJ6005 GBJ604 GBJ610 GBJ608 GBJ606
描述 6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
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