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GBJ8A-LF

Bridge Rectifier Diode, 1 Phase, 8A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ-6, 4 PIN

器件类别:分立半导体    二极管   

厂商名称:Won-Top Electronics Co., Ltd.

厂商官网:https://www.wontop.com/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Won-Top Electronics Co., Ltd.
包装说明
ROHS COMPLIANT, PLASTIC, GBJ-6, 4 PIN
针数
4
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
UL RECOGNIZED, HIGH RELIABILITY
最小击穿电压
50 V
外壳连接
ANODE
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
JESD-30 代码
R-PSFM-T4
JESD-609代码
e3
湿度敏感等级
2
最大非重复峰值正向电流
200 A
元件数量
4
相数
1
端子数量
4
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
8 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
260
最大重复峰值反向电压
50 V
表面贴装
NO
端子面层
Matte Tin (Sn)
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
40
Base Number Matches
1
文档预览
WTE
POWER SEMICONDUCTORS
GBJ8A – GBJ8M
Pb
8.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction
A
GBJ-6
Dim
Min
Max
29.7
30.3
A
19.7
20.3
B
5.0
C
17.0
18.0
D
3.8
4.2
E
3.1Ø
3.4Ø
G
2.3
2.7
H
0.9
1.1
J
1.8
2.2
K
0.6
0.8
L
4.4
4.8
M
3.4
3.8
N
9.8
10.2
P
7.3
7.7
R
10.8
11.2
S
2.3
2.7
T
All Dimensions in mm
!
Low Forward Voltage Drop
!
High Current Capability
G
!
High Reliability
!
High Surge Current Capability
!
Ideal for Printed Circuit Boards
C
!
Recognized File # E157705

H
J
B
+
~
~
-
K
E
P
M
N
R
R
D
Mechanical Data
!
!
!
!
!
!
!
Case: GBJ-6, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 7.0 grams (approx.)
Mounting Position: Any
Mounting Torque: 10 cm-kg (8.8 in-lbs) Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
S
G
T
L
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T
C
= 110°C
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage per diode
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 4.0A
@T
A
= 25°C
@T
A
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
GBJ8A GBJ8B GBJ8D GBJ8G GBJ8J GBJ8K GBJ8M
Unit
50
35
100
70
200
140
400
280
8.0
600
420
800
560
1000
700
V
V
A
I
FSM
V
FM
I
R
R
JA
R
JC
T
j,
T
STG
200
1.0
10
250
26
2.8
-55 to +150
A
V
µA
°C/W
°C/W
°C
Typical Thermal Resistance per leg (Note 2)
Typical Thermal Resistance per leg (Note 1)
Operating and Storage Temperature Range
Note: 1. Device mounted on 100 x 100 x 1.6mm thick Al plate heatsink.
2. Device mounted on P.C.B. without heatsink.
GBJ8A – GBJ8M
1 of 4
© 2006 Won-Top Electronics
10
8
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
12
I
O
, AVERAGE RECTIFIED CURRENT (A)
100
Tj = 25
°
C
10
6
4
2
Resistive or
Inductive load
1.0
Pulse width = 300
µ
s
0
0
25
50
75
100
125
150
0.1
0.0
0.2
0.6
1.0
1.4
1.8
T , TEMPERATURE (
°
C)
Fig. 1 Forward Current Derating Curve
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Fwd Characteristics
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
200
Single half-sine-wave
(JEDEC method)
100
T
j
= 25
°
C
f = 1.0MHz
150
C
j
, JUNCTION CAPACITANCE (pF)
100
T
j
= 25
°
C
100
10
50
0
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
1
1
10
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
GBJ8A – GBJ8M
2 of 4
© 2006 Won-Top Electronics
MARKING INFORMATION
WTE
GBJ
+
~
8x
~
-
WTE
GBJ8x
x
Polarity
= Manufacturer’s Logo
= Device Number
= A, B, D, G, J, K or M
= As Marked on Body
PACKAGING INFORMATION
BULK
Tube Size
L x W x H (mm)
475 x 40 x 7
Quantity
(PCS)
15
Inner Box Size
L x W x H (mm)
490 x 145 x 135
Quantity
(PCS)
750
Carton Size
L x W x H (mm)
510 x 305 x 160
Quantity
(PCS)
1,500
Approx. Gross Weight
(KG)
16.0
Note:
1. Anti-static tube, water clear color.
GBJ8A – GBJ8M
3 of 4
© 2006 Won-Top Electronics
ORDERING INFORMATION
Product No.
GBJ8A
GBJ8B
GBJ8D
GBJ8G
GBJ8J
GBJ8K
GBJ8M
1.
2.
Package Type
SIL Bridge
SIL Bridge
SIL Bridge
SIL Bridge
SIL Bridge
SIL Bridge
SIL Bridge
Shipping Quantity
15 Units/Tube
15 Units/Tube
15 Units/Tube
15 Units/Tube
15 Units/Tube
15 Units/Tube
15 Units/Tube
Shipping quantity given is for minimum packing quantity only. For minimum
order quantity, please consult the Sales Department.
To order Lead Free version (with Lead Free finish), add “-LF” suffix to part
number above. For example, GBJ8A-LF.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING:
DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
support devices or systems without the express written approval.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone:
886-7-822-5408 or 886-7-822-5410
Fax:
886-7-822-5417
Email:
sales@wontop.com
Internet:
http://www.wontop.com
We power your everyday.
GBJ8A – GBJ8M
4 of 4
© 2006 Won-Top Electronics
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参数对比
与GBJ8A-LF相近的元器件有:GBJ8G-LF、GBJ8D-LF、GBJ8J-LF、GBJ8K-LF、CCN-7809LF-02-88R7-F-F。描述及对比如下:
型号 GBJ8A-LF GBJ8G-LF GBJ8D-LF GBJ8J-LF GBJ8K-LF CCN-7809LF-02-88R7-F-F
描述 Bridge Rectifier Diode, 1 Phase, 8A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ-6, 4 PIN Bridge Rectifier Diode, 1 Phase, 8A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ-6, 4 PIN Bridge Rectifier Diode, 1 Phase, 8A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ-6, 4 PIN Bridge Rectifier Diode, 1 Phase, 8A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ-6, 4 PIN Bridge Rectifier Diode, 1 Phase, 8A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ-6, 4 PIN Array/Network Resistor, Isolated, Tantalum Nitride/nickel Chrome, 0.1W, 88.7ohm, 1% +/-Tol, -50,50ppm/Cel, 3535,
是否Rohs认证 符合 符合 符合 符合 符合 符合
Reach Compliance Code unknown unknown unknown unknown unknown compliant
JESD-609代码 e3 e3 e3 e3 e3 e3
端子数量 4 4 4 4 4 20
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT SMT
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 -
厂商名称 Won-Top Electronics Co., Ltd. Won-Top Electronics Co., Ltd. Won-Top Electronics Co., Ltd. Won-Top Electronics Co., Ltd. Won-Top Electronics Co., Ltd. -
包装说明 ROHS COMPLIANT, PLASTIC, GBJ-6, 4 PIN ROHS COMPLIANT, PLASTIC, GBJ-6, 4 PIN ROHS COMPLIANT, PLASTIC, GBJ-6, 4 PIN ROHS COMPLIANT, PLASTIC, GBJ-6, 4 PIN ROHS COMPLIANT, PLASTIC, GBJ-6, 4 PIN -
针数 4 4 4 4 4 -
其他特性 UL RECOGNIZED, HIGH RELIABILITY UL RECOGNIZED, HIGH RELIABILITY UL RECOGNIZED, HIGH RELIABILITY UL RECOGNIZED, HIGH RELIABILITY UL RECOGNIZED, HIGH RELIABILITY -
最小击穿电压 50 V 400 V 200 V 600 V 800 V -
外壳连接 ANODE ANODE ANODE ANODE ANODE -
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS -
二极管元件材料 SILICON SILICON SILICON SILICON SILICON -
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE -
JESD-30 代码 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 -
湿度敏感等级 2 2 2 2 2 -
最大非重复峰值正向电流 200 A 200 A 200 A 200 A 200 A -
元件数量 4 4 4 4 4 -
相数 1 1 1 1 1 -
最大输出电流 8 A 8 A 8 A 8 A 8 A -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
峰值回流温度(摄氏度) 260 260 260 260 260 -
最大重复峰值反向电压 50 V 400 V 200 V 600 V 800 V -
表面贴装 NO NO NO NO NO -
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE -
处于峰值回流温度下的最长时间 40 40 40 40 40 -
Base Number Matches 1 1 1 1 1 -
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