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GBL04

3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:BILIN

厂商官网:http://www.galaxycn.com/

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器件:GBL04

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BL
FEATURES
GALAXY ELECTRICAL
GBL005 - - -GBL10
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 4.0 A
KBJ2
.187(4.7)
.148(3.8)
.810(20.6)
.770(19.6)
SILICON BRIDGE RECTIFIERS
Rating to 1000V PRV
Surge overload rating to 150 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Glass passivated junctions
.080(2.0)
.065(1.65)
440(11.2)
420(10.7)
+
~
~
_
.095(2.40)
.065(1.65)
.56(14.2)
.50(12.7)
.107(2.67)
.088(2.28)
.045(1.14)
.035(0.90)
.210(5.3)
.190(4.8)
.020(0.51)
.015(0.38)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
GBL
005
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current
@T
A
=25
GBL
01
100
70
100
GBL
02
200
140
200
GBL
04
400
280
400
4.0
GBL
06
600
420
600
GBL
08
800
560
800
GBL
10
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at
2.0
A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
150.0
A
V
F
I
R
T
J
T
STG
1.1
5.0
500.0
- 55 ---- + 150
- 55 ---- + 150
V
μA
Operating junction temperature range
Storage temperature range
www.galaxycn.com
Document Number 0287064
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- PEAK FORWARD SURGE CURRENT
AVERAGE FORWARD OUTPUT CURRENT,
AMPERES
GBL005 - - - GBL10
FIG.2 -- FORWARD DERATING CURVE
PEAK FORWARD SURGE CURRENT,
250
5
200
8.3ms Single Half Sine Wave
T
J
=150
4
AMPERES
150
3
100
2
50
1
0
1
0
10
100
0
50
100
150
NUMBER OF CYCLES AT 60H
Z
AMBIENT TEMPERATURE,
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT,
AMPERES
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
10
10
4
1.0
1.0
T
J
=100
0.1
T
J
=25
0.1
.01
0
20
40
60
80
100
120
140
.01
.2
.4
.6
.8
1.0
1.2
1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE
www.galaxycn.com
Document Number 0287064
BL
GALAXY ELECTRICAL
2.
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参数对比
与GBL04相近的元器件有:GBL005、GBL01、GBL02、GBL10、GBL08、GBL06。描述及对比如下:
型号 GBL04 GBL005 GBL01 GBL02 GBL10 GBL08 GBL06
描述 3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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