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GBL10-E3/72

Bridge Rectifier Diode, 1 Phase, 3A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE GBL, 4 PIN

器件类别：分立半导体    二极管   

厂商名称：Vishay(威世)

厂商官网：http://www.vishay.com

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Vishay(威世)
包装说明
R-PSIP-T4
针数
4
制造商包装代码
CASE GBL
Reach Compliance Code
unknown
其他特性
UL RECOGNIZED
外壳连接
ISOLATED
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
JESD-30 代码
R-PSIP-T4
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值正向电流
150 A
元件数量
4
相数
1
端子数量
4
最大输出电流
3 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度（摄氏度）
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
1000 V
表面贴装
NO
端子面层
MATTE TIN
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
GBL005 thru GBL10
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL Recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• Typical I
R
less than 0.1 µA
• High case dielectric strength
• Solder Dip 260 °C, 40 seconds
Case Type GBL
~
~
~
~
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for Monitor, TV, Printer, SMPS, Adapter,
Audio equipment, and Home Appliances application.
MECHANICAL DATA
Case:
GBL
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity:
As marked on body
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
j
max.
4A
50 V to 1000 V
150 A
5 µA
1.0 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
output current at
T
C
= 50 °C
T
A
= 40 °C
SYMBOL GBL005 GBL01 GBL02 GBL04 GBL06 GBL08 GBL10
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
50
35
50
100
70
100
200
140
200
400
280
400
4.0
(1)
3.0
(2)
150
93
- 55 to + 150
600
420
600
800
560
800
1000
700
1000
UNIT
V
V
V
A
A
A
2
sec
°C
Peak forward surge current single sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
Note:
(1) Unit mounted on 3.0 x 3.0 x 0.11" thick (7.5 x 7.5 x 0.3 cm) Al. plate
(2) Unit mounted on P.C.B. at 0.375" (9.5 mm) lead length and 0.5 x 0.5" (12 x 12 mm) copper pads
Document Number 88609
08-Dec-06
www.vishay.com
1
GBL005 thru GBL10
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum
instantaneous forward
voltage drop per diode
TEST CONDITIONS
at 4.0 A
SYMBOL
V
F
GBL005
GBL01 GBL02 GBL04 GBL06 GBL08 GBL10
1.00
UNIT
V
Maximum DC reverse
T
A
= 25 °C
current at rated DC
T
A
= 125 °C
blocking voltage per diode
Typical junction
capacitance per diode
at 4.0 V, 1 MHz
I
R
5.0
500
95
40
µA
C
J
pF
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
Note:
(1) Unit mounted on 3.0 x 3.0 x 0.11" thick (7.5 x 7.5 x 0.3 cm) Al. plate
(2) Unit mounted on P.C.B. at 0.375" (9.5 mm) lead length and 0.5 x 0.5" (12 x 12 mm) copper pads
SYMBOL
R
θJA
R
θJC
GBL005
GBL01 GBL02 GBL04 GBL06 GBL08 GBL10
22
(2)
3.5
(1)
UNIT
°C/W
ORDERING INFORMATION
PREFERRED P/N
GBL06-E3/45
GBL06-E3/51
UNIT WEIGHT (g)
2.18
2.18
PREFERRED PACKAGE CODE
45
51
BASE QUANTITY
20
400
DELIVERY MODE
Tube
Anti-static PVC Tray
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
5.0
150
Average Forward Output Current (A)
60 Hz Resistive or Inductive Load
4.0
Heat-Sink Mounting
3.0 x 3.0 x 0.11" Thick
(7.5 x 7.5 x 0.3 cm)
Aluminium Plate
Peak Forward Surge Current (A)
T
j
= T
j
max.
Single Sine-Wave
100
3.0
2.0
P.C.B. Mounted
0.47 x 0.47" (12 x 12 mm)
Copper Pads
with
0.375"
(9.5 mm) Lead Length
0
50
100
150
50
1.0
1.0 Cycle
0
1
10
100
0
Ambient Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Derating Curves Outzput Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
2
Document Number 88609
08-Dec-06
GBL005 thru GBL10
Vishay General Semiconductor
100
1000
T
j
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
10
1
Junction Capacitance (pF)
100
0.1
T
j
= 25 °C
Pulse
Width
= 300
µs
1 % Duty Cycle
50 - 400
V
600 - 1000
V
10
1.6
0.1
1
10
100
0.01
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Forward Voltage Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
500
100
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (A)
10
10
T
A
= 125 °C
50 - 400
V
60 - 1000
V
1
1
0.1
T
A
= 25 °C
0.01
0
20
40
60
80
100
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Heating Time (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case Type GBL
0.125 (3.17)
x 45 degrees
Chamfer
0.825 (20.9)
0.815 (20.7)
0.080 (2.03)
0.060 (1.50)
0.421 (10.7)
0.411 (10.4)
0.095 (2.41)
0.080 (2.03)
0.098 (2.5)
0.075 (1.9)
0.050 (1.27)
0.040 (1.02)
0.210 (5.3)
0.190 (4.8)
0.026 (0.66)
0.020 (0.51)
0.098 (2.5)
0.075 (1.9)
0.718 (18.2)
0.682 (17.3)
Lead Depth
0.022 (0.56)
0.018 (0.46)
0.040 (1.02)
0.030 (0.76)
0.140 (3.56)
0.128 (3.25)
Polarity shown on front side of case, positive lead
beveled
corner
.
Document Number 88609
08-Dec-06
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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参数对比
与GBL10-E3/72相近的元器件有：GBL04-E3/72、GBL08-E3/72、GBL02-E3/22、GBL005-E3/72、GBL01-E3/72、GBL06-E3/72。描述及对比如下：
型号 GBL10-E3/72 GBL04-E3/72 GBL08-E3/72 GBL02-E3/22 GBL005-E3/72 GBL01-E3/72 GBL06-E3/72
描述 Bridge Rectifier Diode, 1 Phase, 3A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE GBL, 4 PIN Bridge Rectifier Diode, 1 Phase, 3A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE GBL, 4 PIN Bridge Rectifier Diode, 1 Phase, 3A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE GBL, 4 PIN Bridge Rectifier Diode, 1 Phase, 3A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE GBL, 4 PIN Bridge Rectifier Diode, 1 Phase, 3A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE GBL, 4 PIN Bridge Rectifier Diode, 1 Phase, 3A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE GBL, 4 PIN Bridge Rectifier Diode, 1 Phase, 3A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE GBL, 4 PIN
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合
包装说明 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4
针数 4 4 4 4 4 4 4
制造商包装代码 CASE GBL CASE GBL CASE GBL CASE GBL CASE GBL CASE GBL CASE GBL
Reach Compliance Code unknown unknow unknown unknown unknown unknown unknown
其他特性 UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 代码 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4
JESD-609代码 e3 e3 e3 e3 e3 e3 e3
湿度敏感等级 1 1 1 1 1 1 1
最大非重复峰值正向电流 150 A 150 A 150 A 150 A 150 A 150 A 150 A
元件数量 4 4 4 4 4 4 4
相数 1 1 1 1 1 1 1
端子数量 4 4 4 4 4 4 4
最大输出电流 3 A 3 A 3 A 3 A 3 A 3 A 3 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 1000 V 400 V 800 V 200 V 50 V 100 V 600 V
表面贴装 NO NO NO NO NO NO NO
端子面层 MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
厂商名称 Vishay(威世) - Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
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器件捷径:
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