首页 > 器件类别 > 分立半导体 > 二极管

GBL402

3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

器件类别:分立半导体    二极管   

厂商名称:Weitron Technology

厂商官网:http://weitron.com.tw/

下载文档
器件参数
参数名称
属性值
厂商名称
Weitron Technology
Reach Compliance Code
unknow
二极管类型
BRIDGE RECTIFIER DIODE
文档预览
GBL401 thru GBL410
High Current Glass Passivated
Molding Single-Phase Bridge Rectifier
P b
Lead(Pb)-Free
REVERSE VOLTAGE
100 TO 1000 VOLTS
FORWARD CURRENT
4.0 AMPERE
Features:
* Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
* High current capacity with small package
* Glass passivated chip junctions
* Superior thermal conductivity
* High IFSM
GBL
GBL Outline Dimension
Dim
A
B
C
D
E
F
G
H
I
J
K
L
Min
20.4
3x45˚
1.80
0.90
4.80
10.2
17.37
1.37
3.20
0.80
0.80
0.30
Unit:mm
Max
21.0
-
2.20
1.30
5.20
10.8
18.37
2.37
3.60
1.20
1.20
0.70
WEITRON
http://www.weitron.com.tw
1/3
31-Jan-2011
GBL401 thru GBL410
MAXIMUM RATINGS
(T
A
=25°C unless otherwise noted)
Characteristics
Maximum Repetitive Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Average Rectified Forward Current @Tc = 50°C
60Hz Sine Wave Resistance Load @Ta = 40°C
Peak Forward Surge Current,8.3 ms Single Half
Sine-Wave Superimposed on Rated Load
Symbol GBL401 GBL402 GBL404 GBL406 GBL408 GBL410
Unit
V
RRM
V
RMS
V
DC
I
O
I
FSM
V
F
I
R
I2t
Vdia
R
θ
JA
R
θ
JC
T
J
T
STG
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
µA
A2sec
KV
°C/W
°C/W
°C
°C
4
3
150
1.1
5
500
93
2.5
32
8
150
-55 to +150
Max instantaneous forward voltage at 2.0A
Maximum DC Reverse Current @Ta = 25°C
At Rated DC BlockingVoltage @Ta = 100°C
Rating Of Fusing (t<8.3ms)
Dielectric Strength Terminals To Case, AC 1
Minute Current 1mA
Maximum Thermal On P.C.B. Without Heat-Sink
Resistance Per Leg On Al Plate Heat-Sink
Operating Junction Temperature
Storage Temperature
WEITRON
http://www.weitron.com.tw
2/3
31-Jan-2011
GBL401 thru GBL 410
Average Rectified Forward Current Io(A)
Case Temperature Tc(•
)
Fig. 1 Derating Curve
nstantaneous Reverse Current (µA)
Percent of Rated Peak Reverse Voltage•
Fig.2•
Typical Reverse Characteristics
Forward Voltage VF
Fig.3•
Forward Voltage
Peak Surge Forward Current IFSM(A)
Forward Current (A)
Number of Cycles
Fig.4•
Peak Surge Forward Capability
WEITRON
http://www.weitron.com.tw
3/3
31-Jan-2011
查看更多>
参数对比
与GBL402相近的元器件有:GBL406、GBL401、GBL404、GBL408、GBL410。描述及对比如下:
型号 GBL402 GBL406 GBL401 GBL404 GBL408 GBL410
描述 3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2.4 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 2.4 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Reach Compliance Code unknow unknow unknow unknow unknow unknow
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
厂商名称 Weitron Technology Weitron Technology Weitron Technology Weitron Technology - -
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消