GBPC12, GBPC15, GBPC25, GBPC35
www.vishay.com
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
GBPC-W
GBPC
FEATURES
• UL recognition file number E54214
• Universal 3-way terminals: snap-on, wire
wrap-around, or PCB mounting
• Typical I
R
less than 0.3 μA
• High surge current capability
• Low thermal resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
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TYPICAL APPLICATIONS
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PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
T
J
max.
Diode variations
GBPC, GBPC-W
12 A, 15 A, 25 A, 35 A
50 V to 1000 V
200 A, 300 A, 300 A, 400 A
5 μA
1.1 V
150 °C
Quad
General purpose use in AC/DC bridge full wave rectification
for power supply, home appliances, office equipment,
industrial automation applications.
MECHANICAL DATA
Case:
GBPC, GBPC-W
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals:
Nickel plated on faston lugs or silver plated on
wire leads, solderable per J-STD-002 and JESD22-B102.
Suffix letter “W” added to indicate wire leads
(e.g. GBPC12005W).
Polarity:
As marked, positive lead by beveled corner
Mounting Torque:
20 inches-lbs. max.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
GBPC12
Maximum average forward rectified
output current (Fig. 1)
GBPC15
GBPC25
GBPC35
GBPC12
Peak forward surge current single
sine-wave superimposed on rated load
GBPC15
GBPC25
GBPC35
GBPC12
Rating (non-repetitive, for t greater than
1 ms and less than 8.3 ms) for fusing
GBPC15
GBPC25
GBPC35
RMS isolation voltage from case to leads
Operating junction storage temperature range
V
ISO
T
J
, T
STG
I
2
t
I
FSM
I
F (AV)
SYMBOL
V
RRM
V
RMS
V
DC
GBPC12, 15, 25, 35
005
50
35
50
01
100
70
100
02
200
140
200
04
400
280
400
12
15
25
35
200
300
300
400
160
375
375
660
2500
- 55 to + 150
V
°C
A
2
s
A
A
06
600
420
600
08
800
560
800
10
1000
700
1000
UNIT
V
V
V
Revision: 21-Feb-14
Document Number: 88612
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
GBPC12, GBPC15, GBPC25, GBPC35
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
GBPC12
Maximum instantaneous
forward drop per diode
GBPC15
GBPC25
GBPC35
Maximum reverse DC current at rated
DC blocking voltage per diode
Typical junction capacitance per diode
TEST
CONDITIONS
I
F
= 6.0 A
I
F
= 7.5 A
I
F
= 12.5 A
I
F
= 17.5 A
T
A
= 25 °C
T
A
= 125 °C
4 V, 1 MHz
I
R
C
J
5.0
500
300
μA
pF
V
F
1.1
V
SYMBOL
GBPC12, 15, 25, 35
005
01
02
04
06
08
10
UNIT
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
GBPC12 to GBPC25
Typical thermal resistance
GBPC35
SYMBOL
GBPC12, 15, 25, 35
005
01
02
04
1.9
°C/W
1.4
06
08
10
UNIT
R
JC
(1)
Notes
(1)
With heatsink
(2)
Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with #10 screw
ORDERING INFORMATION
(Example)
PREFERRED P/N
GBPC1206-E4/51
GBPC1506-E4/51
GBPC2506-E4/51
GBPC3506-E4/51
GBPC1206W-E4/51
GBPC1506W-E4/51
GBPC2506W-E4/51
GBPC3506W-E4/51
UNIT WEIGHT (g)
15.79
15.79
15.79
15.79
13.8
13.8
13.8
13.8
PREFERRED PACKAGE CODE
51
51
51
51
51
51
51
51
BASE QUANTITY
100
100
100
100
100
100
100
100
DELIVERY MODE
Paper box
Paper box
Paper box
Paper box
Paper box
Paper box
Paper box
Paper box
Revision: 21-Feb-14
Document Number: 88612
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
GBPC12, GBPC15, GBPC25, GBPC35
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
200
60 Hz
Resistive or
Inductive Load
6 x 2.2 x 2.2"
AL, Finned Plate
1000
Vishay General Semiconductor
Peak Forward Surge Current (A)
Average Forward Current (A)
Bridges Mounted on
9.5 x 3.5 x 4.6"
(22.9 x 8.9 x 11.7 cm)
AL, Finned Plate
5 x 6 x 4.9"
AL, Finned Plate
5 x 4 x 3"
AL, Finned Plate
T
J
= T
J
Max.
0.5 ms Single Sine-Wave
GBPC35
100
GBPC12
GBPC15
GBPC25
1.0 Cycle
10
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Maximum Output Rectified Current
Fig. 4 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
40
35
100
Instantaneous Forward Current (A)
GBPC35
R
thSA
= 0.5 °C/W
Average Forward Current (A)
60 Hz
Resistive or
Inductive Load
T
A
= 150 °C
T
A
= 125 °C
10
30
25
20
15
10
5
0
0
GBPC25
R
thSA
= 0.5 °C/W
GBPC15
R
thSA
= 1.0 °C/W
T
A
= 100 °C
T
A
= 25 °C
1
GBPC12
R
thSA
= 1.0 °C/W
10
20
30
40
50
60
70
80
90
100
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Ambient Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 2 - Maximum Output Rectified Current
Fig. 5 - Typical Instantaneous Forward Characteristics Per Diode
Average Power Dissipation of Bridge (W)
80
70
60
50
40
30
20
10
0
0
10
20
30
40
Resistive or
Inductive Load
T
J
= T
J
Max.
Capacitive Load
1000
Instantaneous Reverse Leakage
Current (µA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
10
100
1
T
A
= 25 °C
0.1
0
10
20
30
40
50
60
70
80
90
100
Average Output Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Maximum Power Dissipation
Fig. 6 - Typical Reverse Leakage Characteristics Per Diode
Revision: 21-Feb-14
Document Number: 88612
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
GBPC12, GBPC15, GBPC25, GBPC35
www.vishay.com
Vishay General Semiconductor
1000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1000
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
100
100
10
10
1
10
100
1
0.01
0.1
1
10
100
Reverse Voltage (V)
t - Heating Time (s)
Fig. 7 - Typical Junction Capacitance Per Diode
Fig. 8 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
GBPC-W
Hole for
#10 Screw
0.220 (5.59)
DIA.
0.200 (5.08)
1.135 (28.8)
1.115 (28.3)
0.732 (18.6)
0.692 (17.6)
0.24 (6.0)
0.18 (4.6)
Hole for
#10 Screw
0.220 (5.59)
DIA.
0.200 (5.08)
GBPC
1.135 (28.8)
1.115 (28.3)
0.672 (17.1)
0.632 (16.1)
AC
1.135 (28.8)
1.115 (28.3)
0.732 (18.6)
0.692 (17.6)
0.672 (17.1)
0.632 (16.1)
1.135 (28.8)
1.115 (28.3)
0.034 (0.86)
0.030 (0.76)
0.732 (18.6)
0.692 (17.6)
0.094 (2.4)
DIA.
0.25
(6.35)
0.582 (14.8)
0.542 (13.8)
0.24 (6.0)
0.18 (4.6)
0.042 (1.07)
0.038 (0.97)
DIA.
0.470 (11.9)
0.430 (10.9)
0.50 (12.7)
0.44 (11.7)
1.25
(31.8)
MIN.
0.034 (0.86)
0.030 (0.76)
0.310 (7.87)
0.290 (7.36)
0.310 (7.87)
0.290 (7.36)
0.840 (21.3)
0.740 (18.8)
Revision: 21-Feb-14
Document Number: 88612
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 08-Feb-17
1
Document Number: 91000