GBU8005C thru GBU810C
SILICON BRIDGE RECTIFIERS
REVERSE VOLTAGE
- 50
to
1000Volts
FORWARD CURRENT
- 8.0
Amperes
GBU-C
.874(22.2)
.860(21.8)
.154(3.9)
.146(3.7)
.232(5.9)
.224(5.7)
3.2*3.2
CHAMFER
.156(3.95)
.148(3.75)
FEATURES
●
Surge overload rating -200 amperes peak
●
Ideal for printed circuit board
●
Reliable low cost construction utilizing
molded plastic technique
●
Plastic material has U/L
.752(19.1)
.720(18.3)
.079(2.0)
.063(1.6)
flammability classification 94V-0
●
Mounting postition:Any
.720(18.29)
.680(17.27)
.047(1.2)
.035(0.9)
.100(2.54)
.085(2.16)
.126(3.2)
.114(2.9)
.080(2.03)
.065(1.65)
.210
.190
(5.3)
(4.8)
.210
.190
(5.3)
(4.8)
.210
.190
(5.3)
(4.8)
.022(.56)
.018(.46)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current
@ T
C
=100℃ (without heatsink)
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 4.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I
2
t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance Per Element (Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
@ T
J
=25℃
@ T
J
=125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
GBU
8005C
50
30
50
GBU
801C
100
70
100
GBU
802C
200
140
200
GBU
804C
400
280
400
8.0
3.2
200
1.0
10
500
166
60
2.2
-55 to +125
-55 to +150
GBU
806C
600
420
600
GBU
808C
800
560
800
GBU
810C
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
I
2
t
C
J
R
θJC
T
J
T
STG
A
V
uA
A
2
s
pF
℃/W
℃
℃
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 75mm*75mm*1.6mm cu plate heatsink.
~ 285 ~
RATING AND CHARACTERTIC CURVES
GBU8005C thru GBU810C SERIES
FIG.1-FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
10
PEAK FORWARD SURGE CURRENT,
AMPERES
WITH HEATSINK
FIG.2-MAXIMUM NON-REPETITIVE SURGE CURRENT
200
PULSE WIDTH 8.3ms
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
8.0
6.0
4.0
2.0
0.00
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
150
WITHOUT HEATSINK
100
50
0.1
0
20
40
60
80
100
120
140
0
0
2
5
10
20
50
100
NUMBER OF CYCLETS AT 60Hz
CASE TEMPERATURE,
°
FIG.4-TYPICAL FORWARD CHARACTERISTICS
FIG.3-TYPICAL JUNCTION CAPACITANCE
1000
INSTANTANEOUS FORWARD CURRENT,
(A)
10
CAPACITANCE,(pF)
100
1.0
10
0.1
T
J
= 25°C
PULSE WIDTH 300us
T
J
=25
℃
,f=1MH
Z
1.0
1.0
10.0
REVERSE VOLTAGE,(VOLTS)
100
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.5-TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT ,(uA)
T
J
=125
℃
100
T
J
=100
℃
10
T
J
=50
℃
1.0
T
J
=25
℃
0.1
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
~ 286 ~
