TOC
Control Devices
HIGH SPEED PIN DIODES
DESCRIPTION
The GC4200 series are high speed (cathode base) PIN di-
odes made with high resistivity epitaxial silicon material.
These diodes are passivated with silicon dioxide for high
stability and reliability and have been proven by thou-
sands of device hours in high reliability systems.
These devices can withstand storage temperatures from
-65° to +200°C and will operate over the range from -55°
to +150°C. All devices meet or exceed military environ-
mental specifications of MIL-S-19500. The GC4200 se-
ries will operate with as little as +10 mA forward bias.
APPLICATIONS
The GC4200 series can be used in RF circuits as an on/off
element, as a switch, or as a current controlled resistor
in attenuators extending over the frequency range from
UHF through Ku band.
Switch applications include high speed switches (ECM
systems), TR switches, channel or antenna selection
switches (telecommunications), duplexers (radar) and
digital phase shifters (phased arrays).
The GC4200 series are also used as passive and active
limiters for low to moderate RF power levels.
Attenuator type applications include amplitude modula-
tors, AGC attenuators, power levelers and level set attenua-
ELECTRICAL SPECIFICATIONS: T
A
= 25°C
MODEL
NUMBER
BREAKDOWN VOLTAGE
(I
R
= 10µA MAX)
V
B
(MIN) (Volts)
JUNCTION
CAPACITANCE
C
J
-10 (MAX)
(pF)
1
SERIES RESISTANCE
(20mA, 1 GHz)
R
S20
(MAX)
(Ohms)
2
CARRIER LIFETIME
(I
4
=6mA, IF=10mA)
T
L
(TYP)
(nS)
THERMAL RESISTANCE
(MAX)
(°C/W)
GC4270
GC4271
GC4272
GC4273
GC4274
GC4275
GC4210
GC4211
GC4212
GC4213
GC4214
GC4215
GC4220
GC4221
GC4222
GC4223
GC4224
GC4225
70
70
70
70
70
70
100
100
100
100
100
100
250
250
250
250
250
250
0.06
0.10
0.20
0.30
0.40
0.50
0.06
0.10
0.20
0.30
0.40
0.50
0.06
0.10
0.20
0.30
0.40
0.50
1.5
1.0
0.8
0.7
0.6
0.5
1.5
1.0
0.75
0.6
0.5
0.35
2.5
2.0
1.5
1.0
0.8
0.6
60
60
60
60
60
60
100
100
100
100
100
100
400
400
400
400
400
400
80
70
70
60
50
40
80
70
70
60
50
40
80
70
70
60
50
40
Notes:
1. Capacitance is measured at 1 MHz and -10 volts.
2. Resistance is measured using transmission loss techniques.
3. This series of devices is available in standard case styles 00, 15, 30, 35 and 85, plus other styles on request.
The tabulated specifications above are for the style 30
package. Diodes may also be available in other case
styles.
Each type offers trade offs in series resistance, junction
capacitance and carrier lifetime; the proper choice of
which depends on the end application. Reverse polarity
diodes (NIP) and higher voltage PIN and NIP diodes are
also available. (See data sheets for GC4300, GC4400,
and GC4500 series respectively.)
RATINGS
Maximum Leakage Current: 0.5
µA
at 80% of minimum
rated breakdown
Operating Temperature:
Storage Temperature:
-55°C to +150°C
-65°C to +200°C
SEMICONDUCTOR OPERATION
75 T
echnology Drive Lowell, MA 01851 T
el: 978-442-5600 Fax: 978-937-3748
71
TOC
Control Devices
HIGH SPEED PIN DIODES
TYPICAL PERFORMANCE CURVES
R
s
SERIES RESISTANCE - (OHMS)
100
GC4270
GC4271
GC4272
GC4273
GC4274
GC4275
10
1.0
.1
.01
.1
1.0
10.
I
F
FORWARD BIAS CURRENT - (mA)
100
SEMICONDUCTOR OPERATION
75 T
echnology Drive Lowell, MA 01851 T
el: 978-442-5600 Fax: 978-937-3748
72
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