GC4510 – GC4533
TM
®
CONTROL DEVICES
High Voltage NIP Diodes
RoHS Compliant
DESCRIPTION
The GC4500 series are high voltage, high power (anode base) NIP diodes.
These high resistivity silicon devices are passivated with silicon dioxide for
high stability and reliability and have been proven by thousands of device
hours in high reliability systems.
These devices can withstand storage temperatures from -65°C to +200°C
and will operate over the range from -55° to +150°C. All devices meet or
exceed military environmental specifications of MIL-PRF-19500.
The NIP diode is used when negative bias current is available for forward
conduction and will operate typically with -50 mA bias. Breakdown voltages
are available up to 500 volts. (Higher voltages available on request. Consult
factory for details.) These diodes have somewhat faster speeds as compared
with similar PIN diodes.
This series of diodes meets RoHS requirements per EU Directive
2002/95/EC. The standard terminal finish is gold unless otherwise specified.
Consult the factory if you have special requirements.
KEY FEATURES
Available as packaged devices or
as chips for hybrid applications
High power handling
Suitable for applications to 18Ghz
Low Loss
Low Distortion
RoHS Compliant
1
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1 Products are supplied with a Gold finish and are
suitable for RoHS complaint assembly. Consult factory
for details.
APPLICATIONS
2B
The GC4500 series can be used in RF circuits as an on/off element, as a
switch or as a current controlled resistor in attenuators extending over the
frequency range from UHF through Ku band.
Switch applications include medium high power switches (ECM systems), TR
or
lobing
switches,
channel
or
antenna
selection
switches
(telecommunications), duplexers (radar) and digital phase shifters (phase
arrays).
The GC4500 series are also used as active limiters for low to moderate RF
power levels. Attenuator type applications include amplitude modulators,
AGC attenuators, power levelers and level set attenuators.
APPLICATIONS/BENEFITS
TR Switches
Antenna Selector Switches
Duplexers
Digital Phase Shifters
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
3B
Rating
Maximum Leakage Current
@80% of Minimum Rated V
B
Storage Temperature
Operating Temperature
Symbol
I
R
T
STG
T
OP
Value
0.5
-65 to +200
-55 to +150
Unit
uA
GC4510-GC4533
GC4510-GC4533
ºC
ºC
For the most current data, consult our website:
www.MICROSEMI.com
HU
U
Specifications are subject to change, consult factory for further information.
These devices are ESD sensitive and must be handled using ESD precautions.
Copyright
2006
Rev.: 2009-01-19
Microsemi
Microwave Products
Page 1
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GC4510 – GC4533
TM
®
CONTROL DEVICES
High Voltage NIP Diodes
RoHS Compliant
DEVICE ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)
E
Model Number
GC4510 – 00
GC4511 – 00
GC4512 – 00
GC4513 – 00
3
I
R
=10μA
V
B
(V)
(Min)
100
100
100
100
300
300
300
300
C
J
(pF)
1
@V
R
=50V
@100 mA
R
s
(Ω)
2
(Max)
1.0
0.6
0.5
0.4
1.5
1.2
1.0
0.8
I
R
=6mA/I
F
=10mA
T
L
(uS)
(Typ)
0.1
0.2
0.3
0.4
0.3
0.5
0.75
1.0
Thermal
Resistance
θ
(˚C/W)
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(Max)
0.1
0.25
0.5
0.75
0.1
0.25
0.5
0.75
(Max)
40
25
20
10
50
30
20
15
GC4530 – 00
GC4531 – 00
GC4532 – 00
GC4533 - 00
3
Notes:
1. Capacitance is measured at 1 MHz and -50 VOLTS
2. Resistance is measured using transmission loss techniques.
3. These devices are not available in all the package styles. Please consult the factory for specific case styles offered.
DEVICE NOTES
The tabulated specifications above are for package style 00. Diodes are also
available in various packaged configurations. Some limitations apply.
Consult factory for details.
Each type offers trade offs in series resistance, junction capacitance, carrier
lifetime and breakdown voltage; the proper choice of which depends on the
end application. Standard polarity diodes (PIN) and faster speed PIN and
NIP diodes are also available. (See data sheets for GC4400, GC4200, and
GC4300 series respectively.)
ELECTRICAL
ELECTRICAL
Copyright
2006
Rev.: 2009-01-19
Microsemi
Microwave Products
Page 2
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GC4510 – GC4533
TM
®
CONTROL DEVICES
High Voltage NIP Diodes
RoHS Compliant
TYPICAL RS CURVES
TYPICAL RS CURVES
www.MICROSEMI.com
GRAPHS
GRAPHS
Copyright
2006
Rev.: 2009-01-19
Microsemi
Microwave Products
Page 3
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GC4510 – GC4533
TM
®
CONTROL DEVICES
High Voltage NIP Diodes
RoHS Compliant
PACKAGE STYLE 00
PACKAGE SYLE 30
www.MICROSEMI.com
Notes:
-
-
-
Dimensions vary by model number
Consult factory for details
Order as GC45xx – 00
PACKAGE STYLE 115
Notes:
-
Order as GC45xx – 30
MECHANICAL
MECHANICAL
Notes:
-
Order as GC45xx – 115
OTHER PACKAGE STYLES AVAILABLE ON REQUEST
CONSULT FACTORY
Copyright
2006
Rev.: 2009-01-19
Microsemi
Microwave Products
Page 4
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
