GC9901 – GC9944
TM
®
Schottky Barrier Diodes
For Mixers and Detectors
RoHS Compliant
DESCRIPTION
Schottky Barrier devices are currently available in single beamlead, dual “T”,
ring quad and bridge quad configurations. Devices are available in monolithic
form for hybrid applications as well as in hermetic or non-hermetic packages.
Monolithic devices are recommended for highest frequency, broadband
designs. The beamlead design eliminates the problems associated with wire
bonding very small junction devices thus improving reliability and
performance in MIC applications. Our in house epitaxy process capability
insures repeatability for lowest conversion loss through Ku Band. A broad
range of unique metallization schemes produce Microsemi’s complete line of
barrier heights. Diodes are currently available with barrier heights as low as
240 mV and up to 625 mV per junction. By optimizing epitaxy and
metallization, these devices achieve the lowest R
S
-C
J
products resulting in
exceptional conversion loss performance. “High Rel” screening is available on
packaged devices per your requirements.
This series of devices meets RoHS requirements per EU Directive
2002/95/EC.
KEY FEATURES
Monolithic design for lowest
parasitics
Low Conversion Loss
Suitable for applications to 26.5
GHz
Excellent Noise Figure
Available in low, medium and high
barrier heights
Can be supplied as monolithic
devices for hybrid applications or
as packaged devices
RoHS Compliant
1
www.MICROSEMI.com
APPLICATIONS
Schottky barrier diodes are suitable for a variety of circuit applications ranging
from single ended RF mixers to low level high speed switching. The
monolithic beamlead design minimizes parasitic inductance and capacitance
insuring repeatable performance through Ku band. Single junction devices
such as the style ‘S12’ are well suited for RF Mixers, level detectors, phase
detectors, modulators, etc. With junction capacitances as low as .06 pF,
Monolithic Quads are ideally suited for broadband double balanced mixer
designs through 26.5 GHz. The Ultra-Low Barrier devices (GC9900 Series)
are designed for mixers with low or starved Local Oscillator levels where
optimal conversion loss is a must. High barrier diodes, (GC9940 Series) are
designed for applications where high drive levels are available, such as,
Doppler mixers or motion detection. Schottky diodes are available in Ultra-
Low, Medium and High Drive levels to fit virtually any circuit requirement.
These devices are supplied with Gold
plated terminations. Consult factory for
details.
1
APPLICATIONS/BENEFITS
Mixers
Level Detectors
Phase Detectors
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
3B
Rating
Maximum Power Handling
Storage Temperature
Operating Temperature
Symbol
P
T
STG
T
OP
Value
100
-65 to +175
-55 to +150
Unit
mW
GC9901-GG9944
GC9901-GG9944
ºC
ºC
IMPORTANT:
For the most current data, consult our web site:
www.microsemi.com
HU
U
Specifications are subject to change. Consult factory for latest information.
These devices are ESD sensitive and must be handled use using ESD precautions.
Copyright
2006
Rev: 2009-01-19
Microsemi
Microwave Products
Page 1
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GC9901 – GC9944
TM
®
Schottky Barrier Diodes
For Mixers and Detectors
RoHS Compliant
.
Model
Number
GC9901
GC9902
GC9903
GC9904
GC9911
GC9912
GC9913
GC9914
GC9921
GC9922
GC9923
GC9924
GC9931
GC9932
GC9933
GC9934
GC9941
GC9942
GC9943
GC9944
1
CHIP ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)
Barrier
Height
Freq
Range
Ku-Ka
ULTRA
LOW
X
C
S
Ku-Ka
LOW
X
C
S
Ku-Ka
LOW-
MED
X
C
S
Ku-Ka
MEDIUM
X
C
S
Ku-Ka
HIGH
X
C
S
4.0
3.0
2.0
2.0
2.0
V
B
(V)
2
I
R
=10μA
C
J
(pF)
3
@0V
V
F
(mV)
@1 mA
@5 mA
R
D
(Ω)
(Max)
20
16
14
12
20
16
14
12
20
16
14
12
20
16
14
12
20
16
14
12
NF
SSB
4
(db)
Z
IF
(Ω)
5
(Typ)
www.MICROSEMI.com
(Min)
(Max)
0.10
0.15
0.30
0.50
0.10
0.15
0.30
0.50
0.10
0.15
0.30
0.50
0.10
0.15
0.30
0.50
0.10
0.15
0.30
0.50
(Max)
340
310
300
280
360
350
340
330
470
460
440
420
550
540
530
510
660
640
630
610
(Typ)
6.5
6
5.5
5.5
6.5
6
5.5
5.5
6.5
6
5.5
5.5
6.75
6.25
5.75
5.5
7
6.25
5.75
5.75
140
170
200
250
300
Notes
1. When ordering, specify appropriate package style.
IE: Order GC9901-S12 for single beamlead configuration.
2. V b measured at 10µA (N/A on ring quads).
3. 0 Volts, F=1 MHz (diagonal leads on quads).
4. L.O. = 0 dBm, N
if
= 1.5 dB, F = 10 GHz
5. L.O. = 0 dBm
ELECTRICALS
ELECTRICALS
Copyright
2006
Rev: 2009-01-19
Microsemi
Microwave Products
Page 2
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GC9901 – GC9944
TM
®
Schottky Barrier Diodes
For Mixers and Detectors
RoHS Compliant
VF CURVES
Typical I-V Curves
100
1
2
3
4
10
TYPICAL NF CURVES
www.MICROSEMI.com
I
F
(mA)
1
0.1
1-GC9902
2-GC9922
3-GC9932
4-GC9942
0.01
0
0.2
0.4
0.6
0.8
1
1.2
V
F
(V)
TYPICAL IF IMPEDANCE CURVES
GRAPHS
GRAPHS
Copyright
2006
Rev: 2009-01-19
Microsemi
Microwave Products
Page 3
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GC9901 – GC9944
TM
®
Schottky Barrier Diodes
For Mixers and Detectors
RoHS Compliant
PACKAGE STYLE UC
PACKAGE STYLE S12
www.MICROSEMI.com
Order as GC9900-UC
PACKAGE STYLE TSR
Order as GC9900-S12
PACKAGE STYLE TCC
ORDER AS GC9900-TSR
PACKAGE STYLE QR1
ORDER AS GC9900-TCC
Also available as TCA (‘T’ Common Anode)
PACKAGE STYLE QB1
MECHANICAL
MECHANICAL
ORDER AS GC9900-QR1
ORDER AS GC9900-QB1
DISCRETE AND MONOLITHIC PACKAGE OPTIONS
Copyright
2006
Rev: 2009-01-19
Microsemi
Microwave Products
Page 4
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GC9901 – GC9944
TM
®
Schottky Barrier Diodes
For Mixers and Detectors
RoHS Compliant
PACKAGE STYLE 127A
PACKAGE STYLE 128A
www.MICROSEMI.com
PACKAGE STYLE 127B
PACKAGE STYLE 128B
PACKAGE STYLE 127C
PACKAGE STYLE 128C
MECHANICAL
MECHANICAL
NON HERMETIC EPOXY COATED PACKAGES
Copyright
2006
Rev: 2009-01-19
Microsemi
Microwave Products
Page 5
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
