Chip Multilayer Ceramic Capacitors for Automotive
GCM2165C2A222JA16_ (0805, C0G:EIA, 2200pF, DC100V)
_: packaging code
1.Scope
This product specification is applied to Chip Multilayer Ceramic Capacitors used for Automotive Electronic equipment.
Reference Sheet
2.MURATA Part NO. System
(Ex.)
GCM
21
(1)L/W
Dimensions
6
(2)T
Dimensions
5C
(3)Temperature
Characteristics
2A
(4)Rated
Voltage
222
(5)Nominal
Capacitance
J
(6)Capacitance
Tolerance
A16
(7)Murata’s Control
Code
D
(8)Packaging Code
3. Type & Dimensions
(1)-1 L
2.0±0.15
(1)-2 W
1.25±0.15
(2) T
0.6±0.1
e
0.2 to 0.7
(Unit:mm)
g
0.7 min.
4.Rated value
(3) Temperature Characteristics
(Public STD Code):C0G(EIA)
Temp. coeff
Temp. Range
or Cap. Change
(Ref.Temp.)
(4)
Rated
Voltage
(6)
(5) Nominal
Capacitance
Capacitance
Tolerance
Specifications and Test
Methods
(Operating
Temp. Range)
0±30 ppm/°C
25 to 125 °C
(25 °C)
DC 100 V
2200 pF
±5 %
-55 to 125 °C
5.Package
mark
D
J
(8) Packaging
f180mm
Reel
PAPER W8P4
f330mm
Reel
PAPER W8P4
Packaging Unit
4000 pcs./Reel
10000 pcs./Reel
Product specifications in this catalog are as of Jun.4,2018,and are subject to change or obsolescence without notice.
Please consult the approval sheet before ordering.
Please read rating and !Cautions first.
GCM2165C2A222JA16-01
1
■AEC-Q200
Murata Standard Specification and Test Methods
Specification.
No
AEC-Q200 Test Item
Pre-and Post-Stress
1
Electrical Test
The measured and observed characteristics should satisfy the
specifications in the following table.
Within +/-10.0%
・
Initial measurement for high dielectric constant type
R7/L8 W.V.: 25Vmin. : 0.03 max.
W.V.: 16V/10V : 0.05 max.
R9 : 0.075max.
Perform a heat treatment at 150+0/-10
℃for
1h and then sit
for 24+/-2h at room temperature.Perform the initial measurement.
-
Solder the capacitor on the test substrate(glass epoxy board).
Set the capacitor for 1000+/-12h at 150+/-3℃.
Set for 24+/-2h at room temperature, then measure.
2 High Temperature
Exposure (Storage)
Temperature
Compensating Type
AEC-Q200 Test Method
High Dielectric Type
Appearance No marking defects
Capacitance Within +/-2.5% or +/-0.25pF
Change
Q or D.F.
(Whichever is larger)
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
I.R.
25℃
3 Temperature Cycling
5C/5G/R7/L8 : More than 10,000MΩ or 500Ω・F(Whichever is smaller)
R9 : More than 3000MΩ or 150Ω
・F(Whichever
is smaller)
The measured and observed characteristics should satisfy the
specifications in the following table.
Solder the capacitor on the test substrate(glass epoxy board).
Perform cycle test according to the four heat treatments listed
in the following table.
Set for 24+/-2h at room temperature, then measure.
Within +/-10.0%
Appearance No marking defects
Capacitance Within +/-2.5% or +/-0.25pF
Change
Q or D.F.
(Whichever is larger)
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
R7/L8 W.V.: 25Vmin. : 0.03 max.
W.V.: 16V/10V : 0.05 max.
R9 : 0.075 max.
Step
1
2
3
4
Time(min)
15+/-3
1
15+/-3
1
Cycles
1000(for ΔC/R7)
-55℃+0/-3
Room
125℃+3/-0
Room
300(for 5G/L8/R9)
-55℃+0/-3
Room
150℃+3/-0
Room
・
Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10
℃for
1h and then sit
I.R.
25℃
4 Destructive
Physical Analysis
5 Moisture Resistance
The measured and observed characteristics should satisfy the
specifications in the following table.
Appearance No marking defects
Capacitance Within +/-3.0% or +/-0.30pF
Change
Q or D.F.
(Whichever is larger)
30pFmin. : Q≧350
10pF and over, 30pF and below:
Q≧275+5C/2
10pFmax.: Q
≧200+10C
C: Nominal Capacitance(pF)
I.R.
25℃
R7/L8 : W.V.: 35Vmin.: 0.03 max.
W.V.: 25Vmax. : 0.05 max.
R9 : 0.075max.
Within +/-12.5%
Temperature
(℃)
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
-5
-10
Humidity
90½98%
More than 10,000MΩ or 500Ω・F
(Whichever is smaller)
No defects or abnormalities
for 24+/-2h at room temperature.Perform the initial measurement.
Per EIA-469.
Solder the capacitor on the test substrate(glass epoxy board).
Apply the 24h heat (25℃ to 65℃) and humidity (80%RH to 98%RH)
treatment shown below, 10 consecutive times.
Set for 24+/-2h at room temperature, then measure.
Humidity
80½98%
Humidity
80½98% Humidity
90½98%
Humidity
90½98%
+10
- 2℃
Initial measuremt
5C/5G/R7/L8 : More than 10,000MΩ or 500Ω・F(Whichever is smaller)
R9 : More than 3000MΩ or 150Ω
・F(Whichever
is smaller)
One cycle 24hours
0
1 2
3
4 5
6
7
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Hours
・
Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10
℃for
1h and then sit
for 24+/-2h at room temperature.Perform the initial measurement.
6 Biased Humidity
The measured and observed characteristics should satisfy the
specifications in the following table.
Appearance No marking defects
Capacitance Within +/-3.0% or +/-0.30pF
Change
Q or D.F.
(Whichever is larger)
30pF and over: Q≧200
30pF and below: Q≧100+10C/3
C: Nominal Capacitance(pF)
I.R.
25℃
More than 1,000MΩ or 50Ω・F
(Whichever is smaller)
R7/L8 W.V.: 35Vmin.: 0.035 max.*
* GCM188L81H221 to 103 : 0.05 max.
W.V.: 25Vmax. : 0.05 max.
R9 : 0.075max.
・
Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10
℃for
1h and then sit
for 24+/-2h at room temperature.Perform the initial measurement.
Within +/-12.5%
Solder the capacitor on the test substrate(glass epoxy board).
Apply the rated voltage and 1.3+0.2/-0Vdc (add 6.8kΩ resister)
at 85+/-3℃ and 80%RH to 85%RH humidity for 1000+/-12h.
The charge/discharge current is less than 50mA.
Remove and set for 24+/-2h at room temperature, then measure.
JEMCGS-0363V
2
■AEC-Q200
Murata Standard Specification and Test Methods
Specification.
No
AEC-Q200 Test Item
Temperature
High Dielectric Type
Compensating Type
The measured and observed characteristics should satisfy the
specifications in the following table.
Appearance
Capacitance
Change
Q or D.F.
No marking defects
Within +/-3.0% or +/-0.30pF
(Whichever is larger)
30pFmin. : Q≧350
10pF and over, 30pF and below:
Q≧275+5C/2
10pFmax.: Q
≧200+10C
C: Nominal Capacitance(pF)
I.R.
25℃
8 External Visual
9 Physical Dimension
10 Resistance to Appearance
Solvents
Capacitance
Q or D.F.
Within the specified initial value.
Within the specified initial value.
More than 1,000MΩ or 50Ω・F
(Whichever is smaller)
No defects or abnormalities
Within the specified dimensions
No marking defects
Visual inspection
Using Measuring instrument of dimension.
Per MIL-STD-202 Method 215
Solvent 1 : 1 part (by volume) of isopropyl alcohol
3 parts (by volume) of mineral spirits
Solvent 2 : Terpene defluxer
Solvent 3 : 42 parts (by volume) of water
1 part (by volume) of propylene glycol monomethyl ether
1 part (by volume) of monoethanolamine
I.R.
25℃
11 Mechanical
Shock
Capacitance
Q or D.F.
I.R.
25℃
12 Vibration
Appearance
Capacitance
Q or D.F.
I.R.
25℃
Within the specified initial value.
Within the specified initial value.
More than 10,000MΩ or 500Ω・F
(Whichever is smaller)
No defects or abnormalities
Within the specified initial value.
Within the specified initial value.
More than 10,000MΩ or 500Ω・F
(Whichever is smaller)
Solder the capacitor on the test substrate(glass epoxy board).
The capacitor should be subjected to a simple harmonic motion having
a total amplitude of 1.5mm, the frequency being varied uniformly
between the approximate limits of 10 and 2000Hz.
The frequency range, from 10 to 2000Hz and return to 10Hz,
should be traversed in approximately 20 minutes.
This motion should be applied for 12 items in each 3 mutually
perpendicular directions (total of 36 times).
Appearance
More than 10,000MΩ or 500Ω・F
(Whichever is smaller)
No marking defects
Solder the capacitor on the test substrate(glass epoxy board).
Three shocks in each direction should be applied along 3 mutually
perpendicular axes of the test specimen (18 shocks).
The specified test pulse should be Half-sine and should have a
duration :0.5ms, peak value:1500g and velocity change: 4.7m/s.
R7/L8 : W.V.: 35Vmin.: 0.035 max.*
* GCM155R71H 562 to 223: 0.05 max.
GCM188L81H221 to 103 : 0.04 max.
W.V.: 25Vmax. : 0.05 max.
R9 : 0.075max.
・Initial
measurement for high dielectric constant type.
Apply the test voltage at the max. operating temp. +/-3°C for 1h
and then let sit for 24+/-2h at room temperature,then measure.
Within +/-12.5%
AEC-Q200 Test Method
Solder the capacitor on the test substrate(glass epoxy board).
Apply 200% of the rated voltage for 1000+/-12h at 125+/-3℃
(for ΔC/R7), 150+/-3℃(for 5G/L8/R9).
The charge/discharge current is less than 50mA.
Set for 24+/-2h at room temperature, then measure.
7 Operational Life
13 Resistance to
Soldering Heat
Appearance
Capacitance
Q or D.F.
I.R.
25℃
The measured and observed characteristics should satisfy the
specifications in the following table.
No marking defects
Within the specified initial value.
Within the specified initial value.
More than 10,000MΩ or 500Ω・F
(Whichever is smaller)
Immerse the capacitor in Sn-3.0Ag-0.5Cu solder solution or an eutectic
solder solution at 260+/-5℃ for 10+/-1s.
Set at room temperature for 24+/-2h, then measure.
・Initial
measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10
℃
for 1h and then set
for 24+/-2h at room temperature.
Perform the initial measurement.
JEMCGS-0363V
3
■AEC-Q200
Murata Standard Specification and Test Methods
Specification.
No
AEC-Q200 Test Item
Temperature
High Dielectric Type
Compensating Type
The measured and observed characteristics should satisfy the
specifications in the following table.
Appearance
Capacitance
Change
Q or D.F.
No marking defects
Within +/-2.5% or +/-0.25pF
(Whichever is larger)
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
R7/L8 : W.V.: 25Vmin.: 0.03 max.
W.V.: 16V/10V : 0.05 max.
R9 : 0.075max
・Initial
measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10
℃
for 1h and then set
I.R.
25℃
15 ESD
Appearance
Capacitance
Q or D.F.
I.R.
25℃
16 Solderability
More than 10,000MΩ or 500Ω・F
(Whichever is smaller)
No marking defects
Within the specified initial value.
Within the specified initial value.
More than 10,000MΩ or 500Ω・F
(Whichever is smaller)
95% of the terminations is to be soldered evenly and continuously.
(a) Preheat at 155℃ for 4h. After preheating, immerse the capacitor
in a solution of rosin ethanol 25(mass)%.
Immerse in Sn-3.0Ag-0.5Cu solder solution at 245+/-5℃ or
an eutectic solder solution at 235+/-5℃ for 5+0/-0.5s.
(b) should be placed into steam aging for 8h+/-15min.
After preheating, immerse the capacitor in a solution of rosin
ethanol
25(mass)%.
Immerse
in Sn-3.0Ag-0.5Cu solder solution at 245+/-5℃
or
an eutectic solder solution at 235+/-5℃ for 5+0/-0.5s.
(c) should be placed into steam aging for 8h+/-15min.
After
preheating, immerse the capacitor in a solution of rosin
ethanol
25(mass)%.
Immerse
in Sn-3.0Ag-0.5Cu solder solution or
an eutectic solder solution for 120+/-5s at 260+/-5℃.
17 Electrical
zation
Q or D.F.
30pFmin. : Q≧1000
30pFmax.: Q
≧400+20C
C: Nominal Capacitance(pF)
R7/L8 : W.V.: 25Vmin.: 0.025 max.
W.V.: 16V/10V : 0.035 max.
R9 : 0.05max.
Item
Frequency
Voltage
1.0+/-0.1MHz
0.5 to 5.0Vrms
AEC-Q200 Test Method
Solder the capacitor on the test substrate(glass epoxy board).
Perform the 300 cycles according to the two heat treatments listed
in the following table(Maximum transfer time is 20s).
Set for 24+/-2h at room temperature, then measure.
14 Thermal Shock
Within +/-10.0%
Step
Temp.
(℃）
Time
(min)
1
-55+0/-3
15+/-3
2
125+3/-0 (forΔC/R7)
150+3/-0 (for 5G/L8/R9)
15+/-3
for 24+/-2h at room temperature.
Perform the initial measurement.
Per AEC-Q200-002
Appearance
No defects or abnormalities
Shown in Rated value.
Chatacteri- Capacitance
Visual inspection.
The capacitance/Q/D.F. should be measured at 25℃ at the
frequency and voltage shown in the table.
Char.
ΔC,5G
(1000 pF and below)
ΔC,5G
(more than 1000pF)
R7,R9,L8
(C≦10μF)
1.0+/-0.1kHz
1.0+/-0.2Vrms
I.R. 25℃
More than 100,000MΩ or 1000Ω・F
(Whichever is smaller)
More than 10,000MΩ or 500Ω・F
(Whichever is smaller)
More than 1,000MΩ or 10Ω・F
(Whichever is smaller)
More than 100MΩ or 1Ω・F
(Whichever is smaller)
The insulation resistance should be measured with a DC voltage not
exceeding the rated voltage at 25℃ and 125℃(for ΔC/R7)/
150℃(for 5G/L8/R9) within 2 minutes of charging.
I.R. 125℃
More than 10,000MΩ or 100Ω・F
(Whichever is smaller)
I.R. 150℃
More than 10,000MΩ or 100Ω・F
(Whichever is smaller)
Dielectric
Strength
No failure
No failure should be observed when 250% of the rated voltage is
applied between the terminations for 1 to 5s, provided the
charge/discharge current is less than 50mA.
JEMCGS-0363V
4
■AEC-Q200
Murata Standard Specification and Test Methods
Specification.
No
AEC-Q200 Test Item
Appearance
Capacitance
Change
Q or D.F.
Temperature
Compensating Type
No marking defects
Within +/-5.0% or +/-0.5pF
(Whichever is larger)
Within the specified initial value.
Within +/-10.0%
AEC-Q200 Test Method
High Dielectric Type
Solder the capacitor on the test substrate(glass epoxy board)
shown in Fig1.
Then apply a force in the direction shown in Fig 2 for 60s.
The soldering should be done by the reflow method and should be
conducted with care so that the soldering is uniform and free of defects
½ﾝﾃﾞﾝ½
a
0.3
0.5
45
0.6
0.8
2.0
2.0
50 min.
18 Board Flex
such as heat shock.
Type
GCM03
GCM15
45
GCM18
GCM21
GCM31
GCM32
b
0.9
1.5
支持台
2.2
3.0
4.4
4.4
c
0.3
0.6
0.9
1.3
1.7
2.6
(in mm)
I.R.
25℃
More than 10,000MΩ or 500Ω・F
(Whichever is smaller)
Land
b
f4.5
20
Pressurizing
speed:1.0mm/s
Pressurize
40
R4
100
c
a
c
Capacitance meter
Fig.
19 Terminal
Strength
Capacitance
Q or D.F.
Within the specified initial value.
Within the specified initial value.
Appearance
No marking defects
t : 1.6mm
(GCM03/15:0.8mm)
45
45
Fig.2
Flexure：2
(High Dielectric Type)
Flexure：3
(Temperature
Compensating Type)
Solder the capacitor on the test substrate(glass epoxy board)
shown in Fig3.
Then apply 18N* force in parallel with the test jig for 60s.
The soldering should be done either with an iron or using the reflow
method and should be conducted with care so that the soldering is
uniform and free of defects such as heat shock
*2N(GCM03/15)
I.R.
25℃
More than 10,000MΩ or 500Ω・F
(Whichever is smaller)
Type
GCM03
GCM15
GCM18
GCM21
GCM31
GCM32
a
0.3
0.4
1.0
1.2
2.2
2.2
b
0.9
1.5
3.0
4.0
5.0
5.0
c
0.3
0.5
1.2
1.65
2.0
2.9
c
(in mm)
b
a
ﾗﾝﾄﾞ
b
f4.5
t: 1.6mm
(GCM03/15: 0.8mm)
Solder resist
Baked electrode or
Copper foil
c
20 Beam Load Test
Destruction value should be exceed following one.
< Chip L dimension : 2.5mm max. >
Chip thickness > 0.5mm rank : 20N
Chip thickness = 0.5mm rank : 8N
Chip thickness = 0.3mm rank : 5N
Chip thickness < 0.3mm rank : 2.5N
< Chip L dimension : 3.2mm min. >
Chip thickness < 1.25mm rank : 15N
Chip
thickness
≧1.25mm
rank : 54.5N
a
Fig.3
Place the capacitor in the beam load fixture as Fig 4.
Apply a force.
< Chip Length : 2.5mm max. >
Iron Board
< Chip Length : 3.2mm min. >
L
0.6L
Fig.4
Speed supplied the Stress Load : *0.5mm/s
*GCM03: 0.1mm/s
JEMCGS-0363V
5
