ISSUED DATE :2004/11/30
REVISED DATE :
G D 5 11
Description
S U R F A C E M O U N T, S W I T C H I N G D I O D E
V O LT A G E 8 5 V, C U R R E N T 0 . 1 A
Package Dimensions
The GD511 is designed for ultra high speed switching application, low forward voltage and fast reverse recovery time.
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.85
1.05
0
0.10
0.80
1.00
1.15
1.45
1.60
1.80
2.30
2.70
REF.
L
b
c
Q1
Millimeter
Min.
Max.
0.20
0.25
0.10
0.40
0.40
0.18
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Maximum Peak Reverse Voltage
Maximum Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current(10ms)
Total Power Dissipation
Symbol
Tj
Tstg
V
RM
V
R
I
FM
I
O
I
FSM
P
D
Ratings
+150
-55 ~ +150
85
80
300
100
2
150
V
V
mA
mA
A
mW
Unit
Electrical Characteristics at Ta = 25 :
Characteristic
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Symbol
V
F
(1)
V
F
(2)
V
F
(3)
I
R
C
T
Trr
Min.
-
-
-
-
-
-
Typ.
0.6
0.7
0.9
-
2.2
1.6
Max.
-
-
1.2
0.5
4.0
4.0
Unit
V
V
V
A
pF
nS
I
F
=1mA
I
F
=10mA
I
F
=100mA
V
R
=80V
V
R
=0, f=1MHz
I
F
=10mA
Test Conditions
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ISSUED DATE :2004/11/30
REVISED DATE :
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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