ISSUED DATE :2005/10/03
REVISED DATE :
G
I
1952
Description
PNP HIGH SPEED SWITCHING TRANSISTOR
The G
I
1952 is designed for high speed switching applications.
Features
&
saturation voltage, typically V
CE
(sat) =-0.2V at I
C
/I
B
=-3A/-0.15A
Low
&High speed switching, typically tf =0.15 s at I
C
=-3A
&Wide SOA
&
Complements to G
I
5103
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0.45
0.60
0.90
1.50
5.40
5.80
Absolute Maximum Ratings
(T
A
=25 : )
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Device Dissipation (T
A
=25 : )
Total Device Dissipation (T
C
=25 : )
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
P
D
T
J
T
stg
Ratings
-100
-60
-5
-5
-10
1
10
150
-55 ~ +150
Unit
V
V
V
A
A
W
W
:
:
Electrical Characteristics
(T
A
= 25 : unless otherwise noted)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
1
*V
BE(sat)
2
*h
FE
1
*h
FE
2
fT
Cob
Min.
-100
-60
-5
-
-
-
-
-
-
120
40
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
80
130
Max.
-
-
-
-10
-10
-0.3
-0.5
-1.2
-1.5
270
-
-
-
Unit
V
V
V
uA
uA
V
V
V
V
Test Conditions
I
C
=-50uA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50uA, I
C
=0
V
CB
=-100V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-3A, I
B
=-0.15A
I
C
=-4A, I
B
=-0.2A
I
C
=-3A, I
B
=-0.15A
I
C
=-4A, I
B
=-0.2A
V
CE
=-2V, I
C
=-1A
V
CE
=-2V, I
C
=-3A
V
CE
=-10V, I
E
=0.5A, f=30MHz
V
CB
=-10V, I
E
=0, f=1MHz
MHz
pF
G
I
1952
Page: 1/3
ISSUED DATE :2005/10/03
REVISED DATE :
t
on
(Turn-on Time)
t
stg
(Storage Time)
t
f
(Fall Time)
-
-
-
-
-
-
0.3
1.5
0.3
uS
I
C
=-3A , R
L
=10
I
B1
=-I
B2
=-0.15A
V
CC
-30V
*Measure using pulse current
Characteristics Curve
G
I
1952
Page: 2/3
ISSUED DATE :2005/10/03
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
G
I
1952
Page: 3/3
