GI820 thru GI828
Vishay Semiconductors
formerly General Semiconductor
Fast Switching Rectifier
Case Style P600
Reverse Voltage
500 to 800 V
Forward Current
5.0 A
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• High surge current capability
• High forward current operation
• Fast switching for high efficiency
• Construction utilizes void-free molded plastic technique
• Uniform molded body
• High temperature soldering guaranteed:
250°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
0.360 (9.1)
0.340 (8.6)
Mechanical Data
Case:
Void-free molded plastic body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.07 oz., 2.1 g
Packaging codes/options:
1/750 EA. per Bulk Box
4/800 EA. per 13" Reel (52mm Tape)
23/300 EA. per Ammo Box (52mm Tape)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
GI820
GI821
GI822
GI824
GI826
GI828
Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum non-repetitive peak reverse voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=55°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Typical thermal resistance
(1)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
V
RSM
I
F(AV)
I
FSM
R
ΘJA
T
J
, T
STG
50
35
50
75
100
70
100
150
200
140
200
250
5.0
300
400
280
400
450
600
420
600
650
800
560
800
880
V
V
V
V
A
A
°C/W
°C
10
-50 to +150
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage
at 5.0A
T
J
=25°C
at 15.7A
T
J
=100°C
Maximum DC reverse current
T
A
=25°C
at rated DC blocking voltage
T
A
=100°C
Typical junction capacitance at 4.0V, 1MHz
Maximum reverse recovery time
I
F
=1.0A, V
R
=30V, di/dt=50A/µs, I
rr
= 10% I
RM
Maximum reverse recovery current
I
F
=1.0A, V
R
=30V, di/dt=50A/µs,
V
F
I
R
C
J
t
rr
I
RM(REC)
1.10
1.05
10
1.0
300
200
2.0
V
µA
pF
ns
ns
Notes:
(1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
Document Number 88629
21-Mar-02
www.vishay.com
1
GI820 thru GI828
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curves
7.0
20
Resistive or Inductive Load
L = Lead Length
Fig. 2 – Forward Current
Derating Curve
Average Forward Current (A)
L=
L=
Average Forward Current (A)
6.0
5.0
4.0
3.0
2.0
1.0
0
20
Capacitive Load
I
(pk)
5.0
=
10
I
(AV)
20
I
(pk)
I
(AV)
=
π
1.1 x 1.1" (30 x 30mm)
Copper Pads
16
0.1
2"
(3.
2
mm
m)
12
0.25
)
" (6
.3m
1.6 x 1.6 x 0.04"
(40 x 40 x 1mm)
Copper Heatsink
8
L=0
.375
4
L = 0.
" (9.5
62" (1
mm)
5.9mm
)
40
60
80
100
120
140
160
180
0
75
80
85
90
95
100 105 110 115 120 125
Ambient Temperature (°C)
Lead Temperature
°C
Fig. 3 – Maximum Non-Repetitive
Peak Forward Surge Current
400
350
100
Fig. 4 – Typical Instantaneous
Forward Characteristics
Instantaneous Forward Current (A)
Peak Forward Surge Current (A)
8.3ms Single Half Sine-Wave
(JEDEC Method)
300
250
10
T
J
= 25°C
Pulse Width = 300µs
1% Duty Cycle
T
A
= 25°C
200
T
J
= 125°C
150
100
1
10
100
1
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Number of Cycles at 60 H
Z
Instantaneous Forward Voltage (V)
Fig. 5 – Typical Reverse
Characteristics
T
J
= 100°C
Fig. 6 – Typical Thermal Resistance
R
θJL
Thermal Resistance From Junction
to Lead,
°CW
25
L = Lead Length
20
10
Instantaneous Reverse Current (µA)
1
T
J
= 50°C
15
10
0.1
T
J
= 25°C
5.0
0.01
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (V)
Equal Lead Lengths to Heatsink (Inches)
www.vishay.com
2
Document Number 88629
21-Mar-02
