首页 > 器件类别 > 半导体 > 分立半导体

GL34G

0.5 A, 400 V, SILICON, SIGNAL DIODE, DO-213AA

器件类别:半导体    分立半导体   

厂商名称:GE Sensing ( Amphenol Advanced Sensors )

厂商官网:http://www.vishay.com/

下载文档
GL34G 在线购买

供应商:

器件:GL34G

价格:-

最低购买:-

库存:点击查看

点击购买

文档预览
GL34A THRU GL34J
SURFACE MOUNT GLASS PASSIVATED FAST SWITCHING JUNCTION RECTIFIER
Reverse Voltage -
50 to 600 Volts
*
D
DO-213AA
Forward Current -
0.5 Ampere
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mount applications
High temperature metallurgically
bonded construction
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
Fast switching for high efficiency
High temperature soldering guaranteed:
450°C/5 seconds at terminals. Complete device
submersible temperature of 260°C for 10 seconds in
solder bath
N
T
E
SOLDERABLE ENDS
1st BAND
2nd BAND
P
A
T
E
D2
D1=
0.066
0.060
(1.676)
(1.524)
0.022 (0.559)
0.016 (0.406)
0.145 (3.683)
0.131(3.327)
1st band denotes type and polarity
2cnd band denotes voltage type
D2 = D1 + 0
- 0.008 (0.20)
MECHANICAL DATA
Case:
JEDEC DO-213AA molded plastic over glass body
Terminals:
Plated terminals, solderable per MIL-STD-750,
Method 2026
Polarity:
Two bands indicate cathode-end - 1st band
denotes device type and 2nd band denotes repetitive peak
reverse voltage rating
Mounting Position:
Any
Weight:
0.0014 ounce, 0.036 gram
Dimensions in inches and (millimeters)
*
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602 and brazed-end cap assembly by Patent No. 3,930,306
®
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Standard recovery device: first band is white
SYMBOLS
GL34A
GL34B
GL34D
GL34G
GL34J
Polarity color bands (2nd Band)
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
T
=75°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 0.5A
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25°C
T
A
=125°C
V
RRM
V
RMS
V
DC
I
(AV)
Gray
50
35
50
Red
100
70
100
Orange
200
140
200
0.5
Yellow
400
280
400
Green
600
420
600
Volts
Volts
Volts
Amp
I
FSM
V
F
I
R
I
R(AV)
t
rr
C
J
R
ΘJA
R
ΘJT
T
J
, T
STG
10.0
1.2
5.0
50.0
30.0
1.5
4.0
150.0
70.0
-65 to +175
1.3
Amps
Volts
µA
µA
µs
pF
°C/W
°C
Maximum full load reverse current, full cycle
average at T
A
=55°C
Typical reverse recovery time
(NOTE 1)
Typical junction capacitance
(NOTE 2)
Maximum thermal resistance
(NOTE 3)
(
NOTE 4)
Operating junction and storage temperature range
NOTES:
(1) Reverse recovery test conditions I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient, 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(4) Thermal resistance from junction to terminal, 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
4/98
RATINGS AND CHARACTERISTIC CURVES GL34A THRU GL34J
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
0.5
0.4
0.3
0.2
0.1
0
25
10
8.0
6.0
4.0
2.0
0
60 H
Z
RESISTIVE OR
INDUCTIVE LOAD
T
J
=T
J
max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
1
10
NUMBER OF CYCLES AT 60 H
Z
100
50
75
100
125
150
175
TERMINAL TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
10
INSTANTANEOUS FORWARD CURRENT,
AMPERES
10
1
T
J
=100°C
1
T
J
=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
0.1
0.1
T
J
=25°C
0.01
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
30
JUNCTION CAPACITANCE, pF
T
J
=25°C
f=1.0 MH
Z
Vsig=50mVp-p
10
1
1
10
REVERSE VOLTAGE, VOLTS
100
查看更多>
参数对比
与GL34G相近的元器件有:GL34A、GL34B、GL34D、GL34J。描述及对比如下:
型号 GL34G GL34A GL34B GL34D GL34J
描述 0.5 A, 400 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 50 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 100 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 200 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 600 V, SILICON, SIGNAL DIODE, DO-213AA
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消