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GLZ3.3A

Zener Diode, 3.27V V(Z), 3.36%, 0.5W, Silicon, Unidirectional, GLASS, MINIMELF-2

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
不符合
厂商名称
Vishay(威世)
零件包装代码
MELF
包装说明
O-LELF-R2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
LOW IMPEDANCE
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
最大动态阻抗
70 Ω
JESD-30 代码
O-LELF-R2
JESD-609代码
e0
元件数量
1
端子数量
2
最高工作温度
175 °C
封装主体材料
GLASS
封装形状
ROUND
封装形式
LONG FORM
极性
UNIDIRECTIONAL
最大功率耗散
0.5 W
认证状态
Not Qualified
标称参考电压
3.27 V
表面贴装
YES
技术
ZENER
端子面层
Tin/Lead (Sn/Pb)
端子形式
WRAP AROUND
端子位置
END
最大电压容差
3.36%
工作测试电流
20 mA
Base Number Matches
1
文档预览
GLZ Series
New Product
Vishay Semiconductors
formerly General Semiconductor
V
Z
Range
3.3 to 39V
Power Dissipation
500mW
Zener Diodes
MiniMELF (SOD-80C)
Mounting Pad Layout
0.098(2.50)
MAX
0.049(1.25) MIN
Cathode Mark
0.063 (1.6)
0.055 (1.4)
0.019 (0.48)
0.011 (0.28)
0.079(2.00) MIN
0.142 (3.6)
0.134 (3.4)
Dimensions in inches and (millimeters)
0.197(5.00)
REF
Mechanical Data
Case:
MiniMELF Glass Case (SOD-80C)
Weight:
approx. 0.05g
Packaging codes/options:
D1/10K per 13” reel (8mm tape), 20K/box
D2/2.5K per 7” reel (8mm tape), 20K/box
Features
• Silicon Planar Zener Diodes
• In MiniMELF case especially for automatic insertion
• The Zener voltages are graded according to
voltage bands instead of by tolerance.
• Low Zener impedance and low leakage current
• Popular in Asian designs
Maximum Ratings and Thermal Characteristics
(T
Parameter
Zener Current see Table “Characteristics”
Power Dissipation (see fig. 1)
Thermal Resistance Junction to Ambient Air
Junction temperature
Storage temperature range
Note:
(1) Valid provided that electrodes are kept at ambient temperature.
A
= 25°C unless otherwise noted)
Symbol
Value
500
(1)
300
(1)
175
–55 to +175
Unit
P
D
R
θJA
T
j
T
S
mW
°C/W
°C
°C
Document Number 88334
06-May-02
www.vishay.com
1
GLZ Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Zener Voltage
Rank
A
B
A
B
A
B
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
D
A
B
C
A
B
C
(T
A
= 25°C unless otherwise noted)
Dynamic Resistance
(3)
Z
Z
(Ω) at I
ZT
I
ZT
(mA)
20
20
20
Max
70
60
50
I
Z
(mA)
20
20
20
Z
ZK
(Ω) at I
ZK
Max
1000
1000
1000
I
ZK
(mA)
1
1
1
Reverse Leakage Current
I
R
(µA)
Max.
20
10
5
V
R
(V)
1.0
1.0
1.0
V
Z
(V) at I
ZT
Type
GLZ3.3
GLZ3.6
GLZ3.9
Min
3.160
3.320
3.455
3.600
3.74
3.89
4.04
4.17
4.30
4.44
4.55
4.68
4.81
4.94
5.09
5.28
5.45
5.61
5.78
5.96
6.12
6.29
6.49
6.66
6.85
7.07
7.29
7.53
7.78
8.03
8.29
8.57
8.83
9.12
9.41
9.70
9.94
10.18
10.50
10.82
11.13
11.44
11.74
Max
3.380
3.530
3.695
3.845
4.01
4.16
4.29
4.43
4.57
4.68
4.80
4.93
5.07
5.20
5.37
5.55
5.73
5.91
6.09
6.27
6.44
6.63
6.83
7.01
7.22
7.45
7.67
7.92
8.19
8.45
8.73
9.01
9.30
9.59
9.90
10.20
10.44
10.71
11.05
11.38
11.71
12.03
12.35
GLZ4.3
20
40
20
1000
1
5
1.0
GLZ4.7
20
25
20
900
1
5
1.0
GLZ5.1
20
20
20
800
1
5
1.5
GLZ5.6
20
13
20
500
1
5
2.5
GLZ6.2
20
10
20
300
1
5
3.0
GLZ6.8
20
8
20
150
0.5
2
3.5
GLZ7.5
20
8
20
120
0.5
0.5
4.0
GLZ8.2
20
8
20
120
0.5
0.5
5.0
GLZ9.1
20
8
20
120
0.5
0.5
6.0
GLZ10
20
8
20
120
0.5
0.2
7.0
GLZ11
10
10
10
120
0.5
0.2
8.0
GLZ12
10
12
10
110
0.5
0.2
9.0
www.vishay.com
2
Document Number 88334
06-May-02
GLZ Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Zener Voltage
Rank
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
(T
A
= 25°C unless otherwise noted)
Dynamic Resistance
(3)
Z
Z
(Ω) at I
ZT
I
ZT
(mA)
10
Max
14
I
Z
(mA)
10
Z
ZK
(Ω) at I
ZK
Max
110
I
ZK
(mA)
0.5
Reverse Leakage Current
I
R
(µA)
Max.
0.2
V
R
(V)
10
V
Z
(V) at I
ZT
Type
GLZ13
Min
12.11
12.55
12.99
13.44
13.89
14.35
14.80
15.25
15.69
16.22
16.82
17.42
18.02
18.63
19.23
19.72
20.15
20.64
21.08
21.52
22.05
22.61
23.12
23.63
24.26
24.97
25.63
26.29
26.99
27.70
28.36
29.02
29.68
30.32
30.90
31.49
32.14
32.79
33.40
34.01
34.68
35.36
36.00
36.63
Max
12.75
13.21
13.66
14.13
14.62
15.09
15.57
16.04
16.51
17.06
17.70
18.33
18.96
19.59
20.22
20.72
21.20
21.71
22.17
22.63
23.18
23.77
24.31
24.85
25.52
26.26
26.95
27.64
28.39
29.13
29.82
30.51
31.22
31.88
32.50
33.11
33.79
34.49
35.13
35.77
36.47
37.19
37.85
38.52
GLZ15
10
16
10
110
0.5
0.2
11
GLZ16
10
18
10
150
0.5
0.2
12
GLZ18
10
23
10
150
0.5
0.2
13
GLZ20
10
28
10
200
0.5
0.2
15
GLZ22
5
30
5
200
0.5
0.2
17
GLZ24
5
35
5
200
0.5
0.2
19
GLZ27
5
45
5
250
0.5
0.2
21
GLZ30
5
55
5
250
0.5
0.2
23
GLZ33
5
65
5
250
0.5
0.2
25
GLZ36
5
75
5
250
0.5
0.2
27
GLZ39
5
85
5
250
0.5
0.2
30
Notes:
(1) The Zener voltage is measured 40ms after power is supplied.
(2) Specify Zener voltage rank (A, B, C, or D) when ordering parts
(3) Dynamic Zener resistance is measured with f = 1kHz
Document Number 88334
06-May-02
www.vishay.com
3
GLZ Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Power Derating Curve
700
P
tot
-- Power Dissipation (mW)
600
500
400
300
200
100
0
0
25
50
75
100
125
150
175
200
T
A
-- Ambient Temperature (°C)
Fig. 2 – Typical Breakdown Characteristics
100
50
I
Z
-- Zener Current (mA)
20
10
5
2
3.6
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
1
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
0.5
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
39
36
38
40
V
Z
-- Zener Voltage (V)
Fig. 3 – Typical R
Z
vs. I
Z
100
1000
Fig. 4 – Typical Forward Characteristics
GLZ3V6B
10
I
F --
Forward Current (mA)
100
150
200
100
I
Z
(mA)
10
GLZ39B
1
GLZ30A
GLZ20B
GLZ8V2B
0
50
1
0.1
0.1
600
700
800
900
1000
R
Z
(Ω)
V
F
-- Forward Voltage (mV)
www.vishay.com
4
Document Number 88334
06-May-02
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