桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM1015(销售型號 S1015)
■
FEATURES
特點
PNP General Purpose Transistor
■
MAXIMUM
RATINGS（T
A
=25℃）最大額定值
Symbol
符號
V
CBO
V
CEO
V
EBO
Ic
I
B
P
C
T
j
T
stg
Rating
額定值
-50
-50
-5.0
-150
-30
225
150
-55〜150
Unit
單½
Vdc
Vdc
Vdc
mAdc
mAdc
mW
℃
Characteristic
特性參數
Collector-Base Voltage
集電極-基極電壓
Collector-Emitter Voltage
集電極-發射極電壓
Emitter-Base Voltage
發射極-基極電壓
Collector Current-Continuous
集電極電流-連續
Base Current
基極電流
Collector Power Dissipation
集電耗散功率
Junction Temperature
結溫
Storage Temperature
儲存溫度
■
DEVICE
℃
MARKING
打標
GM1015(销售型號 S1015)=BA
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM1015(销售型號 S1015)
■
ELECTRICAL CHARACTERISTICS
電特性
(T
A
=25℃
unless otherwise noted
如無特殊說明，溫度爲
25℃)
Characteristic
特性參數
Collector Cutoff Current
集電極截止電流
Emitter Cutoff Current
發射極截止電流
Collector-Base Breakdown Voltage
Symbol Test Condition Min
符號
測試條件
最小值
I
CBO
I
EBO
V
(BR)CBO
V
CB
=-50V,
I
E
=0
V
EB
=-5V,
I
C
=0
I
C
=-100μA
—
TYP
典型值
—
Max
最大值
-0.1
Unit
單½
μA
μA
—
—
-0.1
集電極-基極擊穿電壓
Collector Emitter Breakdown Voltage
-50
—
—
V
集電極-發射極擊穿電壓
Emitter-Base Breakdown Voltage
V
(BR)CEO
I
C
=-1.0mA
-50
—
—
V
發射極-基極擊穿電壓
DC Current Gain
直流電流增益
Collector-Emitter Saturation Voltage
V
(BR)EBO
I
E
=-100μA
V
CE
=-6V,
I
C
=-2mA
I
C
=-100mA,
I
B
=-10mA
I
C
=-100mA,
I
B
=-10mA
V
CE
=-5.0V,
I
C
=-10mA
V
CE
=-5.0V,
I
C
=-10mA
V
CB
=-10V,
I
E
=0,f=1MHz
-5
—
—
V
h
FE
70
—
400
—
集電極-發射極½和壓降
Base
-Emitter Saturation Voltage
基極-發射極½和壓降
Base-Emitter Voltage
基極-發射極電壓
Transition Frequency
特徵頻率
Collector Output Capacitance
輸出電容
V
CE(sat)
—
—
-0.3
V
V
BE(sat)
—
—
-1.0
V
V
BE
—
—
-0.82
V
f
T
100
180
—
MHz
C
ob
——
4.0
7.0
pF
