桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM2321
SOT-23
場效應晶體管(SOT-23
Field Effect Transistors)
P-Channel Enhancement-Mode MOS FETs
P
沟道增强型
MOS
场效应管
■
MAXIMUM
RATINGS
最大額定值
Symbol
符號
BV
DSS
V
GS
I
D
I
DM
Max
最大值
-20
+10
-2.8
-10
Unit
單½
V
V
A
A
Characteristic
特性參數
Drain-Source Voltage
漏極-源極電壓
Gate- Source Voltage
栅極-源極電壓
Drain Current (continuous)
漏極電流-連續
Drain Current (pulsed)
漏極電流-脉冲
Total Device Dissipation
½耗散功率
T
A
=
25℃環境溫度爲 25℃
Junction
結溫
Storage Temperature
儲存溫度
P
D
550
mW
T
J
T
stg
150
-55to+150
℃
℃
■
DEVICE
MARKING
打標
2321
GM2321=
GM2321=A1
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM2321
■
ELECTRICAL
CHARACTERISTICS
電特性
(T
A
=25℃ unless otherwise noted
如無特殊說明，溫度爲
25℃)
Characteristic
特性參數
Drain-Source Breakdown Voltage
漏極-源極擊穿電壓(I
D
= -250uA,V
GS
=0V)
Gate Threshold Voltage
栅極開启電壓(I
D
= -250uA,V
GS
= V
DS
)
Diode Forward Voltage Drop
内附二極管正向壓降(I
S
= -0.75A,V
GS
=0V)
Zero Gate Voltage Drain Current
零栅壓漏極電流(V
GS
=0V, V
DS
= -16V)
(V
GS
=0V, V
DS
= -16V, T
A
=
55℃)
Gate Body Leakage
栅極漏電流(V
GS
=+10V, V
DS
=0V)
Static Drain-Source On-State Resistance
静态漏源導通電阻(I
D
= -2.8A,V
GS
= -4.5V)
Static Drain-Source On-State Resistance
静态漏源導通電阻(I
D
= -2A,V
GS
= -2.5V)
Input Capacitance
輸入電容
(V
GS
=0V, V
DS
= -10V,f=1MHz)
Output Capacitance
輸出電容
(V
GS
=0V, V
DS
= -10V,f=1MHz)
Turn-ON Time
开启時間
(V
DS
= -10V, I
D
= -2.8A, R
GEN
=6
Ω
)
Turn-OFF Time
关断時間
(V
DS
= -10V, I
D
= -2.8A, R
GEN
=6
Ω
)
Pulse Width<300μs; Duty Cycle<2.0%
Symbol
符號
BV
DSS
V
GS(th)
V
SD
Min
最小值
-20
-0.5
Typ
典型值
—
—
Max
最大值
—
-1.5
Unit
單½
V
V
—
—
-1.5
V
I
DSS
—
—
-1
-10
+100
100
u
A
I
GSS
R
DS(ON)
R
DS(ON)
C
ISS
C
OSS
t
(on)
—
—
—
—
n
A
mΩ
—
—
—
600
120
—
mΩ
pF
—
120
—
pF
—
8
—
ns
t
(off)
—
60
—
ns
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM2321
■
DIMENSION
外½封裝尺寸
