桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM2907 GM2907A
■
MAXIMUM
MAXIMUM
RATINGS
最大額定值
Symbol
符號
V
CEO
V
CBO
V
EBO
Ic
GM2907
-40
-60
-5.0
-600
GM2907A
-60
-60
-5.0
-600
Unit
單½
Vdc
Vdc
Vdc
mAdc
Characteristic
特性參數
Collector-Emitter Voltage
集電極-發射極電壓
Collector-Base Voltage
集電極-基極電壓
Emitter-Base Voltage
發射極-基極電壓
Collector Current-Continuous
集電極電流-連續
■
THERMAL
CHARACTERISTICS
熱特性
Symbol
符號
P
D
Max
最大值
225
1.8
P
D
300
2.4
R
Θ
JA
T
J
,
T
stg
417
Unit
單½
mW
mW/℃
mW
mW/℃
℃/W
Characteristic
特性參數
Total Device Dissipation
½耗散功率
FR-5 Board(1)
T
A
=
25℃溫度爲 25℃
Derate above25℃
超過
25℃遞減
Total Device Dissipation
½耗散功率
Alumina Substrate
氧化鋁襯底,(2)T
A
=
25℃
Derate above25℃
超過
25℃遞減
Thermal Resistance Junction to Ambient
熱阻
Junction and Storage Temperature
結溫和儲存溫度
■
DEVICE
-55to+150℃
MARKING
打標
GM2907=M2B;GM 907A=
GM2907=M2B;GM2907A=2F
B;GM2 A=2F
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM2907 GM2907A
■
ELECTRICAL
CHARACTERISTICS
電特性
)
(T
A
=25
=25℃ unless otherwise noted
如無特殊說明，溫度爲
25℃)
Characteristic
特性參數
Collector-Emitter Breakdown Voltage(3)
集電極-發射極擊穿電壓(Ic=-10mAdc,I
B
=0)
Collector-Base Breakdown Voltage
集電極-基極擊穿電壓(Ic=-10μAdc,I
E
=0)
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓(I
E
=-10μAdc,Ic=0)
Collector Cutoff Current
集電極截止電流
(V
CE
=-30Vdc, V
EB
(Off)
=-0.5Vdc)
Collector Cutoff Current
集電極截止電流
(V
CB
=-50Vdc,I
E
=0)
(V
CB
=-50Vdc,I
E
=0,T
A
=125℃)
Base Cutoff Current
基極截止電流
(V
CE
=-30Vdc, V
EB
(Off)
=-0.5Vdc)
DC Current Gain
直流電流增益
(I
c
=-0.1mAdc,V
CE
=-10.0Vdc)
(I
c
=-1.0mAdc,V
CE
=-10.0Vdc)
(I
c
=-10mAdc,V
CE
=-10.0Vdc)
(I
c
=-150mAdc,V
CE
=-10.0Vdc)(3)
(I
c
=-500mAdc,V
CE
=-10.0Vdc)(3)
Collector-Emitter Saturation Voltage
集電極發射極½和壓降
(I
c
=-150mAdc, I
B
=-15mAdc)
(I
c
=-500mAdc, I
B
=-50mAdc)
Base-Emitter Saturation Voltage
基極發射極½和壓降
(I
c
=-150mAdc, I
B
=-15mAdc)
(I
c
=-500mAdc, I
B
=-50mAdc)
GM2907
GM2907A
Symbol
符號
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
CBO
GM2907
GM2907A
GM2907
GM2907A
GM2907
GM2907A
Min
Max
最小值 最大值
-30
-60
-60
-5.0
—
—
—
—
—
—
—
—
__
—
-50
-0.02
-0.01
-20.0
-10.0
-50
Unit
單½
Vdc
Vdc
Vdc
nAdc
μ
Adc
I
B
H
FE
GM2907
GM2907A
GM2907
GM2907A
GM2907
GM2907A
nAdc
—
35
75
50
100
75
100
100
30
50
—
—
—
300
—
—
V
CE(sat)
—
—
-0.4
-1.6
Vdc
V
BE(sat)
—
—
-1.3
-2.6
Vdc
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM2907 GM2907A
■
SMALL-SIGNAL
CHARACTERISTICS
小信號特性
Symbol
符號
f
T
Min
最小值
200
Max
最大值
—
Unit
單½
MHz
Characteristic
特性參數
Current-Gain-Bandwidth Product
電流增益帶寬乘積
(I
c
=-50mAdc,V
CE
=-20Vdc,f=100MHz)
Output Capacitance
輸出電容
(V
CB
=-10.0Vdc, I
E
=0, f=1.0MHz)
Input Capacitance
輸入電容
(V
EB
=-2.0Vdc, I
C
=0, f=1.0MHz)
■
SWITCHING
C
obo
C
ibo
—
—
80
30
pF
pF
CHARACTERISTICS
開關特性
Turn-On Time
導通時間
Delay Time
延遲時間
Rise Time
上升時間
Turn-Off time
截止時間
Storage Time
儲存時間
Fall Time
下降時間
1. FR-5=1.0×0.75×0.062in.
2. Alumina=0.4×0.3×0.024in.99.5%alumina.
3. Pulse Width<300us;Duty Cycle<2.0%.
4.
t
on
(Vcc=-30Vdc
Ic=-150mAdc,I
B1
=-15mAdc)
—
—
—
—
—
—
45
10
40
100
80
30
ns
ns
t
d
t
r
t
off
(Vcc=-6.0Vdc,Ic=-150mAdc,
I
B1
=I
B2
=-15mAdc)
t
s
t
f
f
T
is defined as the frequency at which (h
fe
) extrapolates to unity.
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM2907 GM2907A
■
DIMENSION
外½封裝尺寸
