桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM3356
■
MAXIMUM
RATINGS
最大額定值
Symbol
符號
V
CEO
V
CBO
V
EBO
Ic
Rating
額定值
12
20
3.0
100
Unit
單½
Vdc
Vdc
Vdc
mAdc
Characteristic
特性參數
Collector-Emitter Voltage
集電極發射極電壓
Collector-Base Voltage
集電極基極電壓
Emitter-Base Voltage
發射極基極電壓
Collector Current-Continuous
集電極電流-連續
■
THERMAL
CHARACTERISTICS
熱特性
Symbol
符號
P
D
Max
最大值
225
1.8
P
D
300
2.4
R
Θ
JA
T
J
,
T
stg
417
Unit
單½
mW
mW/℃
mW
mW/℃
℃/W
Characteristic
特性參數
Total Device Dissipation
½耗散功率
FR-5 Board(1)
T
A
=
25℃環境溫度爲 25℃
Derate above25℃
超過
25℃遞減
Total Device Dissipation
½耗散功率
Alumina Substrate
氧化鋁襯底,(2)T
A
=
25℃
Derate above25℃超過 25℃遞減
Thermal Resistance Junction to Ambient
熱阻
Junction and Storage Temperature
結溫和儲存溫度
■
DEVICE
-55to+150℃
MARKING
打標
3356(2SC3356)
GM3356(2SC3356)=
GM3356(2SC3356)=R25
H
FE
:50-100; 80-150; 120-220; 200-300
0-100 80-150; 120-220; 200-
100;
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM3356
■
ELECTRICAL
CHARACTERISTICS
電特性
)
(T
A
=25
=25℃ unless otherwise noted
如無特殊說明，溫度爲
25℃)
Characteristic
特性參數
Emitter Cutoff Current
發射極截止電流(V
EB
=1.0v,I
C
=0)
Collector Cutoff Current
集電極截止電流(V
CB
=10v,I
E
=0)
Collector-Base Breakdown Voltage
集電極基極擊穿電壓(Ic=10uA)
Collector-Emitter Breakdown Voltage
集電極發射極擊穿電壓(Ic=1mA)
Emitter-Base Breakdown Voltage
發射極基極擊穿電壓(I
E
=10uA)
DC Current Gain
直流電流增益
(V
CE
=10v,I
C
=20mA)
Gain Bandwidth Product
增益帶寬乘積(V
CE
=10v,I
C
=20mA)
Noise Figure
噪声係數
(V
CE
=10V,Ic=7mA,f=1.0GHz)
Feed-Back Capacitance
反馈電容
(V
CB
=10v,I
E
=0,f=1.0MHz)
1. FR-5=1.0×0.75×0.062in.
2. Alumina=0.4×0.3×0.024in.99.5%alumina.
Symbol
符號
I
EBO
I
CBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
H
FE
f
T
NF
C
re
Min
最小值
—
—
20
12
3
50
—
—
—
Typ
典型值
—
—
—
—
—
—
7000
—
0.55
Max
最大值
1.0
1.0
—
—
—
300
—
2.0
1.0
MHz
dB
pF
Unit
單½
μ
A
μ
A
V
V
V
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM3356
■
DIMENSION
外½封裝尺寸
