桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM3402
SOT-23
場效應晶體管(SOT-23
Field Effect Transistors)
N-Channel Enhancement-Mode MOS FETs
N
沟道增强型
MOS
场效应管
■
MAXIMUM RATINGS
最大額定值
Symbol
符號
BV
DSS
V
GS
I
D
I
DM
Max
最大值
30
+12
4
15
Unit
單½
V
V
A
A
Characteristic
特性參數
Drain-Source Voltage
漏極-源極電壓
Gate- Source Voltage
栅極-源極電壓
Drain Current (continuous)
漏極電流-連續
Drain Current (pulsed)
漏極電流-脉冲
Total Device Dissipation
½耗散功率
T
A
=
25℃環境溫度爲 25℃
Junction
結溫
Storage Temperature
儲存溫度
■
DEVICE
P
D
1250
mW
T
J
T
stg
150
-55to+150
℃
℃
MARKING
打標
GM3402=B2
GM340
3402
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM3402
■
ELECTRICAL CHARACTERISTICS
電特性
(T
A
=25℃ unless otherwise noted
如無特殊說明，溫度爲
25℃)
Characteristic
特性參數
Drain-Source Breakdown Voltage
漏極-源極擊穿電壓(I
D
=250uA,V
GS
=0V)
Gate Threshold Voltage
栅極開启電壓(I
D
= 250uA,V
GS
= V
DS
)
Diode Forward Voltage Drop
内附二極管正向壓降(I
S
= 1A,V
GS
=0V)
Zero Gate Voltage Drain Current
零栅壓漏極電流(V
GS
=0V, V
DS
= 24V)
(V
GS
=0V, V
DS
= 24V, T
A
=
55℃)
Gate Body Leakage
栅極漏電流(V
GS
=+12V, V
DS
=0V)
Static Drain-Source On-State Resistance
静态漏源導通電阻(I
D
= 4A,V
GS
=10V)
Static Drain-Source On-State Resistance
静态漏源導通電阻(I
D
= 3A,V
GS
=4.5V)
Static Drain-Source On-State Resistance
静态漏源導通電阻(I
D
= 2A,V
GS
= 2.5V)
Input Capacitance
輸入電容
(V
GS
=10V, V
DS
= 15V,f=1MHz)
Output Capacitance
輸出電容
(V
GS
=10V, V
DS
= 15V,f=1MHz)
Turn-ON Time
开启時間
(V
DS
= 15V, V
GS
= 10V, R
GEN
=6
Ω
)
Turn-OFF Time
关断時間
(V
DS
= 15V, V
GS
= 10V, R
GEN
=6
Ω
)
Pulse Width<300μs; Duty Cycle<2.0%
Symbol
符號
BV
DSS
V
GS(th)
V
SD
Min
最小值
30
0.6
—
Typ
典型值
—
—
—
Max
最大值
—
2
1
Unit
單½
V
V
V
I
DSS
—
—
1
5
+100
55
70
110
—
—
—
u
A
I
GSS
R
DS(ON)
R
DS(ON)
R
DS(ON)
C
ISS
C
OSS
t
(on)
t
(off)
—
—
—
—
—
—
—
—
45
55
83
235
35
3.5
n
A
mΩ
mΩ
mΩ
pF
pF
ns
—
17.5
—
ns
PCB设计
