桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM4947
P-channel 60V, SOP-8 MOSFET P-
P-溝道場效應管
▉
Features
特點
Low on-resistance and maximum DC current capability
½導通電阻和最大直流電流½力
Super high density cell design
超高元胞密度設計
R
DS(ON)
<72mΩ@VGS=-10V
R
DS(ON)
<94mΩ@VGS=-4.5V
▉
Applications
應用
Power Management in Note book
筆記本電源管理
Portable Equipment
便攜式設備
Battery Powered System
電池電源系統
DC/DC Converter
直流/直流变换
Load Switch 負載開關應用
LCD Display inverter 液晶顯示控制
▉
Internal Schematic Diagram
內部結構
▉
Absolute Maximum
Ratings
最大额定值
Symbol
符號
BV
DSS
V
GS
I
D
（at
TC = 25°C
at TC = 70°C）
Characteristic
特性參數
Drain-Source Voltage
漏極-源極電壓
Gate- Source Voltage
栅極-源極電壓
Drain Current (continuous)漏極電流-連續
Drain Current (pulsed)漏極電流-脉冲
Total Device Dissipation
½耗散功率
Thermal Resistance Junction-Ambient
熱阻
Junction/Storage Temperature
結溫/儲存溫度
Max
最大值
Unit
單½
-60
+20
-4.4
-3.5
-18
2.5
50
-55~150
V
V
A
A
W
℃/W
℃
I
DM
P
TOT
(at TC = 25°C)
R
Θ
JA
T
J
,
T
stg
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM4947
▉
Electerical Characteristics
電特性
(T
A
=25℃ unless otherwise noted
如無特殊說明，溫度爲
25℃)
Characteristic
特性參數
Drain-Source Breakdown Voltage
漏極-源極擊穿電壓(I
D
=-250uA,V
GS
=0V)
Gate Threshold Voltage
栅極開启電壓(I
D
=-250uA,V
GS
= V
DS
)
Zero Gate Voltage Drain Current
零栅壓漏極電流(V
GS
=0V, V
DS
= -60V)
Gate Body Leakage
栅極漏電流(V
GS
=+20V, V
DS
=0V)
Static Drain-Source On-State Resistance
静态漏源導通電阻(I
D
=-5A,V
GS
=-10V)
(I
D
=-4A,V
GS
=-4.5V)
Diode Forward Voltage Drop
内附二極管正向壓降(I
SD
=-1A,V
GS
=0V)
Input Capacitance
輸入電容
(V
GS
=0V, V
DS
=-15V,f=1MHz)
Common Source Output Capacitance
共源輸出電容
(V
GS
=0V, V
DS
=-15V,f=1MHz)
Reverse Transfer Capacitance
反向传輸電容
(V
GS
=0V, V
DS
=-15V,f=1MHz)
Gate Source Charge
栅源電荷密度
(V
DS
=-30V, I
D
=-4A, V
GS
=-4.5V)
Gate Drain Charge
栅漏電荷密度
(V
DS
=-30V, I
D
=-4A, V
GS
=-4.5V)
Turn-On Delay Time
開启延迟時間
(V
DS
=-30V, I
D
=-1A, R
GEN
=3
Ω
,V
GS
=-10V)
Turn-On Rise Time
開启上升時間
(V
DS
=-30V, I
D
=-1A, R
GEN
=3
Ω
,V
GS
=-10V)
Turn-Off Delay Time
關断延迟時間
(V
DS
=-30V, I
D
=-1A, R
GEN
=3
Ω
,V
GS
=-10V)
Turn-On Fall Time
開启下降時間
(V
DS
=-30V, I
D
=-1A, R
GEN
=3
Ω
,V
GS
=-10V)
Symbol
符號
BV
DSS
V
GS
(th)
I
DSS
I
GSS
R
DS(ON)
Min
最小值
-60
-1
—
—
—
Typ
典型值
—
—
—
—
60
73
-0.8
962
100
33
5.1
4.9
38
18
51
6
Max
最大值
—
-3
-1
+100
72
94
-1.2
—
—
—
—
—
—
—
—
—
Unit
單½
V
V
u
A
n
A
mΩ
V
SD
C
ISS
C
OSS
C
RSS
Q
gs
Q
gd
—
—
—
—
—
—
—
—
—
—
V
pF
pF
pF
nC
nC
t
d(on)
t
r
t
d(off)
t
f
ns
ns
ns
ns
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM4947
■
DIMENSION
外½封裝尺寸
