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GM71V64403CLJ-6

EDO DRAM, 16MX4, 60ns, CMOS, PDSO32,

器件类别:存储    存储   

厂商名称:LG Semicon Co Ltd

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器件参数
参数名称
属性值
厂商名称
LG Semicon Co Ltd
包装说明
,
Reach Compliance Code
unknown
访问模式
FAST PAGE WITH EDO
最长访问时间
60 ns
其他特性
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION
JESD-30 代码
R-PDSO-J32
内存密度
67108864 bit
内存集成电路类型
EDO DRAM
内存宽度
4
功能数量
1
端口数量
1
端子数量
32
字数
16777216 words
字数代码
16000000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
16MX4
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
认证状态
Not Qualified
自我刷新
YES
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子形式
J BEND
端子位置
DUAL
Base Number Matches
1
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参数对比
与GM71V64403CLJ-6相近的元器件有:GM71VS64403CJ-5、GM71V64403CLJ-5、GM71VS64403CJ-6、GM71V64403CLT-5、GM71V64403CLT-6、GM71VS64403CT-6、GM71VS64403CT-5。描述及对比如下:
型号 GM71V64403CLJ-6 GM71VS64403CJ-5 GM71V64403CLJ-5 GM71VS64403CJ-6 GM71V64403CLT-5 GM71V64403CLT-6 GM71VS64403CT-6 GM71VS64403CT-5
描述 EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, EDO DRAM, 16MX4, 50ns, CMOS, PDSO32,
厂商名称 LG Semicon Co Ltd LG Semicon Co Ltd LG Semicon Co Ltd LG Semicon Co Ltd LG Semicon Co Ltd LG Semicon Co Ltd LG Semicon Co Ltd LG Semicon Co Ltd
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
访问模式 FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO
最长访问时间 60 ns 50 ns 50 ns 60 ns 50 ns 60 ns 60 ns 50 ns
其他特性 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 代码 R-PDSO-J32 R-PDSO-J32 R-PDSO-J32 R-PDSO-J32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32
内存密度 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit
内存集成电路类型 EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM
内存宽度 4 4 4 4 4 4 4 4
功能数量 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1
端子数量 32 32 32 32 32 32 32 32
字数 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words
字数代码 16000000 16000000 16000000 16000000 16000000 16000000 16000000 16000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 16MX4 16MX4 16MX4 16MX4 16MX4 16MX4 16MX4 16MX4
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 J BEND J BEND J BEND J BEND GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
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