桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM8205D
Dual N-channel 20V, SOT-26 MOSFET
双
N-溝道場效應管
▉
Features
特點
Low on-resistance and maximum DC current capability
½導通電阻和最大直流電流½力
Super high density cell design
超高元胞密度設計
R
DS(ON)
<25mΩ@VGS=4.5V
R
DS(ON)
<40mΩ@VGS=2.5V
▉
Applications
應用
Power Management in Note book
筆記本電源管理
Portable Equipment
便攜式設備
Battery Powered System
電池電源系統
DC/DC Converter
直流/直流变换
Load Switch 負載開關應用
▉
Internal Schematic Diagram
內部結構
▉
Absolute
Maximum Ratings
最大额定值
Symbol
符號
BV
DSS
V
GS
I
D
I
DM
P
TOT
R
Θ
JA
T
J
,
T
stg
Max
最大值
Unit
單½
20
+8
5.0
20
1.25
100
-55~150
V
V
A
A
W
℃/W
℃
Characteristic
特性參數
Drain-Source Voltage
漏極-源極電壓
Gate- Source Voltage
栅極-源極電壓
Drain Current (continuous)漏極電流-連續
Drain Current (pulsed)漏極電流-脉冲
Total Device Dissipation
½耗散功率
Thermal Resistance Junction-Ambient
熱阻
Junction/Storage Temperature
結溫/儲存溫度
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM8205D
▉
Electerical
Characteristics
電特性
Symbol
符號
BV
DSS
V
GS
(th)
I
DSS
I
GSS
R
DS(ON)
V
SD
C
ISS
C
OSS
C
RSS
Q
gs
Q
gd
Min
最小值
20
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
典型值
—
—
—
—
20
35
—
800
155
125
1.2
1.9
8
10
18
5
Max
最大值
—
1.0
1
+100
25
40
1.2
—
—
—
—
—
—
—
—
—
Unit
單½
V
V
u
A
n
A
(T
A
=25℃ unless otherwise noted
如無特殊說明，溫度爲
25℃)
Characteristic
特性參數
Drain-Source Breakdown Voltage
漏極-源極擊穿電壓(I
D
=250uA,V
GS
=0V)
Gate Threshold Voltage
栅極開启電壓(I
D
=250uA,V
GS
= V
DS
)
Zero Gate Voltage Drain Current
零栅壓漏極電流(V
GS
=0V, V
DS
= 20V)
Gate Body Leakage
栅極漏電流(V
GS
=+8V, V
DS
=0V)
Static Drain-Source On-State Resistance
静态漏源導通電阻(I
D
=5A,V
GS
=4.5V)
(I
D
=4A,V
GS
=2.5V)
Diode Forward Voltage Drop
内附二極管正向壓降(I
SD
=1.7A,V
GS
=0V)
Input Capacitance
輸入電容
(V
GS
=0V, V
DS
=10V,f=1MHz)
Common Source Output Capacitance
共源輸出電容
(V
GS
=0V, V
DS
=10V,f=1MHz)
Reverse Transfer Capacitance
反向传輸電容
(V
GS
=0V, V
DS
=10V,f=1MHz)
Gate Source Charge
栅源電荷密度
(V
DS
=10V, I
D
=3A, V
GS
=4.5V)
Gate Drain Charge
栅漏電荷密度
(V
DS
=10V, I
D
=3A, V
GS
=4.5V)
Turn-On Delay Time
開启延迟時間
(V
DS
=10V, I
D
=1A, R
GEN
=6
Ω
,V
GS
=4.5V)
Turn-On Rise Time
開启上升時間
(V
DS
=10V, I
D
=1A, R
GEN
=6
Ω
,V
GS
=4.5V)
Turn-Off Delay Time
關断延迟時間
(V
DS
=10V, I
D
=1A, R
GEN
=6
Ω
,V
GS
=4.5V)
Turn-On Fall Time
開启下降時間
(V
DS
=10V, I
D
=1A, R
GEN
=6
Ω
,V
GS
=4.5V)
mΩ
V
pF
pF
pF
nC
nC
t
d(on)
t
r
t
d(off)
t
f
ns
ns
ns
ns
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM8205D
■
TYPICAL CHARACTERISTIC
CURVE
典型特性曲线
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM8205D
■
DIMENSION
外½封裝尺寸
