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GM8550_15

PNP Low Frequency Power Amplifier

厂商名称:GSME Electronics

厂商官网:Http://www.gsme.com.cn

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桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM8550
FEATURES
特點
PNP Low Frequency Power Amplifier
½頻功率放大
Suitable for Driver Stage lf Small Motor
小馬達驅動
Complementary to GM8050
GM8050
互补
最大額定值(T
a
=25
)
CHARACTERISTIC
特性參數
Collector-Base Voltage
集電極-基極電壓
Collect-Emitter Voltage
集電極-發射極電壓
Emitter-Base Voltage
發射極-基極電壓
Collector Current
集電極電流
Collector Power Dissipation
集電極耗散功率
Junction Temperature
結溫
Solder Temperature/Solder Time
焊接溫度/焊接時間
Storage Temperature Range
儲存溫度
Symbol
符號
V
CBO
V
CEO
V
EBO
Rating
額定值
-40
-25
(GMA6801)
-25
-18
(GMA6801)
-5.0
-500
(S8550A,S8550)
-1000
(M8550)
-1200
(MMT8550)
-1500
(SS8550)
-1800
(GMA6801)
225
150
260/10
-55〜150
Unit
單½
V
V
V
Ic
mA
P
C
T
j
T/t
T
stg
mW
℃/S
DEVICE
MARKING
打標
S8550=2TY M8550=Y2.
SS8550=Y.2 GMA6801=6801
S8550A=2TY.
MMT8550=Y2
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM8550
ELECTRICAL CHARACTERISTICS
電特性
(T
A
=25℃ unless otherwise noted
如無特殊說明,溫度爲
25
)
Characteristic
特性參數
Collector Cutoff Current
集電極截止電流
Emitter Cutoff Current
發射極截止電流
Collector-Base Breakdown Voltage
Symbol
符號
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
H
FE
(1)
Test Condition
測試條件
V
CB
=-30V,I
E
=0
V
EB
=-5V,I
C
=0
I
C
=-100μA
(GMA6801)
Min.
Typ.
Max. Unit
最小值 典型值 最大值 單½
-40
(-25)
-25
(-18)
-5
85
-0.1
-0.1
400
μA
μA
V
V
V
集電極-基極擊穿電壓
Collector-Emitter Breakdown Voltage
I
C
=-10mA
(GMA6801)
集電極-發射極擊穿電壓
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓
I
E
=-100μA
V
CE
=-1V,I
C
=-50
(S8550/A)
mA
V
CE
=-1V,I
C
=-100mA
V
CE
=-1V,
I
C
=-1800mA
(GMA6801)
I
C
=-800
mA
(SS8550,MMT8550,M8550)
DC Current Gain
直流電流增益
50
40
40
30
H
FE
(2)
Ic=-500mA
(S8550)
Ic=-500mA
(S8550A)
I
C
=-500mA, I
B
=-50mA(S8550/A)
Collector-Emitter Saturation Voltage
I
C
=-1000mA, I
B
=-100mA(M8550)
集電極-發射極½和壓降
V
CE(sat)
I
C
=-1200mA, I
B
=-120mA(
MMT
8550)
I
C
=-1500mA, I
B
=-150mA(SS8550)
I
C
=-1000mA, I
B
=-100mA(GMA6801)
I
C
=-500mA, I
B
=-50mA(S8550/A)
-0.6
-0.6
-0.6
-0.6
-0.3
V
Base
-Emitter Saturation Voltage
基極-發射極½和壓降
Base-Emitter Voltage
基極-發射極電壓
Transition Frequency
特徵頻率
Collector Output Capacitance
I
C
=-1000mA, I
B
=-100mA(M8550)
V
BE(sat)
I
C
=-1200mA, I
B
=-120mA(
MMT
8550)
I
C
=-1500mA, I
B
=-150mA(SS8550)
I
C
=-1800mA, I
B
=-180mA(GMA6801)
-1
-1.2
V
V
BE
f
T
C
ob
V
CE
=-1V,I
C
=-10mA
V
CE
=-5V,I
C
=-10mA
V
CB
=-10V,I
E
=0,f=1MHz
100
-0.8
120
13
-1.0
30
V
MHz
pF
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