桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM856,857,858(销售型號 BC856,857,858)
■
FEATURES
特點
PNP General Purpose Transistor
■
MAXIMUM RATINGS
最大額定值
Characteristic
特性參數
Collector-Emitter Voltage
集電極發射極電壓
Collector-Base Voltage
集電極基極電壓
Emitter-Base Voltage
發射極基極電壓
Collector Current Continuous
Symbol GM856A,B
(BC856A,B)
符號
V
CEO
V
CBO
V
EBO
Ic
-65
-80
-5.0
-100
GM857A,B,C
(BC857A,B,C)
-45
-50
-5.0
-100
GM858A,B,C
(BC858A,B,C)
-30
-30
-5.0
-100
Unit
單½
Vdc
Vdc
Vdc
mAdc
集電極電流-連續
■
THERMAL CHARACTERISTICS
熱特性
Characteristic
特性參數
Total Device Dissipation
½耗散功率
FR-5 Board(1)
T
A
=
25℃溫度爲 25℃
Derate above25℃
超過
25℃
遞減
Total Device Dissipation
½耗散功率
Alumina Substrate
氧化鋁襯底,(2)T
A
=
25℃
Derate above25℃
超過
25℃遞減
Thermal Resistance Junction to Ambient
熱阻
Junction and Storage Temperature
結溫和儲存溫度
■
DEVICE
Symbol
符號
P
D
Max
最大值
225
1.8
Unit
單½
mW
mW/℃
mW
mW/℃
℃/W
P
D
300
2.4
R
Θ
JA
T
J
,
T
stg
417
-55to+150℃
MARKING
打標
GM856A(BC856A)=3A;GM856B(BC856B)=3B;
GM856A(BC856A) =3A;GM856B(BC856B)
(BC856A)=3A;GM856B (BC856B)=3B;
GM857A(BC857A)=3E;GM857B(BC857B)=3F;GM857C(BC857C)=3G
GM857A(BC857A) =3E;GM857B(BC857B)=3F;GM857C(BC857C) =3G
(BC857A)=3E;GM857B (BC857B)=3F;GM857 C(BC857C)=3
GM858A(BC858A)=3J; GM858B(BC858B)=3K;GM858C(BC858C)=3L
GM858A(BC858A)
(BC858A)=3J; GM858B(BC858B)=3K;GM858C(BC858C)
(BC858B)=3K;GM858C (BC858C)=3L
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM856,857,858(销售型號 BC856,857,858)
■
ELECTRICAL CHARACTERISTICS
電特性
(T
A
=25
)
=25℃ unless otherwise noted
如無特殊說明，溫度爲
25℃)
Characteristic
特性參數
■
OFF CHARACTERISTICS
截止電特性
Collector-Emitter Breakdown Voltage
集電極發射極擊穿電壓
(Ic=-10mAdc,I
B
=0)
Collector-Base Breakdown Voltage
集電極基極擊穿電壓
(Ic=-10μAdc,I
E
=0)
Emitter-Base Breakdown Voltage
發射極基極擊穿電壓
(I
E
=-10μAdc,Ic=0)
Symbol
符號
V
(BR)CEO
856A,B
857A,B,C
858A,B,C
V
(BR)CBO
856A,B
857A,B,C
858A,B,C
V
(BR)EBO
856A,B
857A,B,C
858A,B,C
Min
最小值
Max
最大值
Unit
單½
-65
-45
-30
-80
-50
-30
-5.0
-5.0
-5.0
—
Vdc
—
Vdc
—
-15
-4.0
Vdc
nA
uA
Collector Cutoff Current
集電極截止電流
(V
CB
=-30v)
I
CBO
(V
cB
=-30Vdc,T
A
=150℃)
■
ON CHARCTERISTICS
導通電特性
Characteristic
Symbol
特性參數
符號
DC Current Gain
直流電流增益
H
FE
856A, 857A, 858A
(I
c
=-10uAdc,V
CE
=-5.0Vdc)
856B, 857B, 858B
857C,858C
856A, 857A, 858A
(I
c
=-2.0mAdc,V
CE
=-5.0Vdc)
856B, 857B, 858B
857C,858C
Collector-Emitter Saturation Voltage
—
Min
Typ
Max
Unit
最小值 典型值 最大值 單½
—
90
150
—
270
125
180
250
220
290
475
420
520
800
集電極發射極½和壓降
(I
c
=-10mAdc, I
B
=-0.5mAdc)
(I
c
=-100mAdc, I
B
=-5.0mAdc)
Base-Emitter Saturation Voltage
基極發射極½和壓降
(I
c
=-10mAdc, I
B
=-0.5mAdc)
(I
c
=-100mAdc, I
B
=-5.0mAdc)
Base-Emitter Voltage
基極發射極電壓
(I
c
=-2.0mAdc, V
CE
=-5.0Vdc)
(I
c
=-10mAdc, V
CE
=-5.0Vdc)
V
CE(sat)
—
—
V
BE(sat)
-0.3
-0.65
Vdc
-0.7
-0.9
-0.6
—
—
—
-0.75
-0.82
Vdc
V
BE(on)
V
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM856,857,858(销售型號 BC856,857,858)
■
SMALL-SIGNAL CHARACTERISTICS
小信號特性
Characteristic
特性參數
Current-Gain-Bandwidth Product
電流增益-帶寬乘積
(I
c
=-10mAdc,V
CE
=-5.0Vdc,f=100MHz)
Output Capacitance
輸出電容
(V
CB
=-10Vdc, I
E
=0, f=1.0MHz)
Noise Figure
噪声係數
(V
CE
=-5.0Vdc, I
C
=-200μAdc,
R
s
=2.0kΩf=1.0KHz BW=200Hz)
■
DIMENSION
外½封裝尺寸
單½(UNIT)：mm
Symbol
符號
f
T
C
obo
NF
Min
最小值
100
—
—
Typ
典型值
—
—
—
Max
最大值
—
4.5
10
Unit
單½
MHz
pF
dB
stm32/stm8
