桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM9014(销售型號 S9014)
■
FEATURES
特點
NPN General Purpose Transistor
■
MAXIMUM
RATINGS (T
a
=25
℃
)
最大額定值
Symbol
符號
V
CBO
V
CEO
V
EBO
Ic
I
B
P
C
T
j
T
stg
Rating
額定值
50
45
5.0
150
30
225
150
-55〜150
Unit
單½
Vdc
Vdc
Vdc
mAdc
mAdc
mW
℃
CHARACTERISTIC
特性參數
Collector-Base Voltage
集電極-基極電壓
Collector-Emitter Voltage
集電極-發射極電壓
Emitter-Base Voltage
發射極-基極電壓
Collector Current-Continuous
集電極電流-連續
Base Current
基極電流
Collector Power Dissipation
集電極耗散功率
Junction Temperature
結溫
Storage Temperature Range
儲存溫度
■
DEVICE
℃
MARKING
打標
GM9014(
销售型號
S9014)=J6
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM9014(销售型號 S9014)
■
ELECTRICAL CHARACTERISTICS
電特性
(T
A
=25℃ unless otherwise noted
如無特殊說明，溫度爲
25℃)
Characteristic
特性參數
Collector Cutoff Current
集電極截止電流
Emitter Cutoff Current
發射極截止電流
Collector-Base Breakdown Voltage
Symbol
符號
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
Test Condition
測試條件
Min
最小值
—
—
Typ
典型值
—
—
Max
最大值
0.1
0.1
—
Unit
單½
V
CB
=50V,I
E
=0
V
EB
=5V,I
C
=0
I
C
=100μA
I
C
=1.0mA
I
E
=100μA
V
CE
=6V,I
C
=2mA
μA
μA
V
集電極-基極擊穿電壓
Collector-Emitter Breakdown Voltage
50
—
集電極-發射極擊穿電壓
Emitter-Base Breakdown Voltage
45
—
—
V
發射極-基極擊穿電壓
DC Current Gain
直流電流增益
Collector-Emitter Saturation Voltage
5
—
—
V
200
—
700
—
集電極-發射極½和壓降
Base
-Emitter Saturation Voltage
基極-發射極½和壓降
Base-Emitter Voltage
基極-發射極電壓
Transition Frequency
特徵頻率
Collector Output Capacitance
輸出電容
V
CE(sat)
I
C
=100mA, I
B
=5mA
V
BE(sat)
I
C
=100mA, I
B
=5mA
—
—
0.3
V
—
—
1
V
V
BE
f
T
C
ob
V
CE
=5.0V,I
C
=10mA
V
CE
=5.0V,I
C
=10mA
V
CB
=10V,I
E
=0,
f=1MHz
—
—
0.82
V
100
180
—
MHz
—
4.0
7.0
pF
