桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMB772
TO-126
晶體管(TO-126
Transistors)
功½
PNP Si transistor suited for the output stage of 3W audio amplifier, voltage regulator,
DC-DC
converter and relay driver. PNP
½三極管，適用于 3W 輸出的音頻放大，電壓調整，DC-DC ½
換和繼電器驅動。
■
FEATURES
特點
Low saturation voltage
½½和壓降
Excellent h
FE
linearity and high h
FE
½線性和高的放大倍數
■
DESCRIPTION
■
MAXIMUM
(T
RATINGS
最大額定值(T
a
=25
℃
)
Symbol
符號
V
CBO
V
CEO
V
EBO
Ic
Ic
P
C
T
j
T
stg
Rating
額定值
-40
-30
-5.0
-3.0
-7.0
3
150
-55〜150
Unit
單½
V
V
V
A
A
W
℃
℃
CHARACTERISTIC
特性參數
Collector-Base Voltage
集電極-基極電壓
Collect-Emitter Voltage
集電極-發射極電壓
Emitter-Base Voltage
發射極-基極電壓
Collector Current DC
集電極電流-连续
Collector Current pulse
集電極電流-脉冲
Collector Power Dissipation
集電極耗散功率
Junction Temperature
結溫
Storage Temperature Range
儲存溫度
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMB772
■
ELECTRICAL
CHARACTERISTICS
電特性
Symbol
符號
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
H
FE
(1)
H
FE
(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Test Condition
測試條件
V
CB
=-30V,I
E
=0
V
EB
=-5V,I
C
=0
I
C
=-100μA
I
C
=-10mA
I
E
=-100μA
V
CE
=-2V,I
C
=-20A
V
CE
=-2V,I
C
=-1A
I
C
=-2A, I
B
=-200mA
I
C
=-2A, I
B
=-200mA
V
CE
=-5V,I
C
=-100mA
V
CB
=-10V,I
E
=0,f=1MHz
)
(T
A
=25
=25℃ unless otherwise noted
如無特殊說明，溫度爲
25℃)
Characterstic
特性參數
Collector Cutoff Current
集電極截止電流
Emitter Cutoff Current
發射極截止電流
Collector-Base Breakdown Voltage
Min
最小值
TYP
典型值
Max
最大值
Unit
單½
—
—
—
-1.0
-1.0
μA
μA
V
—
集電極-基極擊穿電壓
Collector-Emitter Breakdown Voltage
-40
—
—
集電極-發射極擊穿電壓
Emitter-Base Breakdown Voltage
-30
—
—
V
發射極-基極擊穿電壓
DC Current Gain
直流電流增益
Collector Saturation Voltage
-5
30
—
—
—
—
—
—
V
—
60
—
400
-0.5
V
集電極½和壓降
Base
Saturation
Voltage
基極½和電壓
Transition Frequency
特徵頻率
Collector Output Capacitance
輸出電容
■
DEVICE
—
—
-2.0
V
—
80
—
MHz
—
55
—
pF
MARKING
打標
GM
B772
E
放大倍數分檔
GM
B772
P
■
H
FE
RANGE
160-320
P
200~400
200~400
E
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMB772
