桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMBT5551(销售型號 MMBT5551)
■
FEATURES
特點
NPN High Voltage Transistor
■
MAXIMUM RATINGS
最大額定值
RATINGS
Characteristic
特性參數
Collector Emitter Voltage
集電極-發射極電壓
Collector Base Voltage
集電極-基極電壓
Emitter Base Voltage
發射極-基極電壓
Collector Current—Continuous
集電極電流-連續
Symbol
符號
V
CEO
V
CBO
V
EBO
Ic
Rating
額定值
160
180
6.0
600
Unit
單½
Vdc
Vdc
Vdc
mAdc
■
THERMAL CHARACTERISTICS
熱特性
Characteristic
特性參數
Total Device Dissipation
½耗散功率
FR-5 Board(1)
T
A
=
25℃環境溫度爲 25℃
Derate above25℃超過 25℃遞減
Thermal Resistance Junction to Ambient
熱阻
Total Device Dissipation
½耗散功率
Alumina Substrate
氧化鋁襯底,(2)T
A
=
25℃
Derate above25℃
超過
25℃遞減
Thermal Resistance Junction to Ambient
熱阻
Junction and Storage Temperature
結溫和儲存溫度
■
DEVICE
Symbol
符號
Max
最大值
225
Unit
單½
mW
mW/℃
℃/W
mW
mW/℃
℃/W
P
D
1.8
R
Θ
JA
P
D
2.4
R
Θ
JA
T
J
,
T
stg
417
556
300
150
℃
, -
55to+150℃
MARKING
打標
GMBT5551
(销售型號 MMBT5551)
=G1
GMBT
BT5551
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMBT5551(销售型號 MMBT5551)
■
ELECTRICAL CHARACTERISTICS
電特性
(T
A
=25℃ unless otherwise noted
如無特殊說明，溫度爲
25℃)
Characteristic
特性參數
Collector Emitter Breakdown Voltage(3)
集電極-發射極擊穿電壓(Ic=1.0mAdc,I
B
=0)
Collector Base Breakdown Voltage
集電極-基極擊穿電壓(Ic=100μAdc,I
E
=0)
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓(I
E
=10μAdc,Ic=0)
Emitter Cutoff Current
發射極截止電流(V
EB
=4.0Vdc,I
c
=0)
Collector Cutoff Current
集電極截止電流(V
CB
=120Vdc,I
E
=0)
DC Current Gain
直流電流增益
(I
c
=1.0mAdc,V
CE
=5.0Vdc)
(I
c
=10mAdc,V
CE
=5.0Vdc)
(I
c
=50mAdc,V
CE
=5.0Vdc)
Collector-Emitter Saturation Voltage
集電極-發射極½和壓降
(I
c
=10mAdc, I
B
=1.0mAdc)
(I
c
=50mAdc, I
B
=5.0mAdc)
Base-Emitter Saturation Voltage
基極-發射極½和壓降
(I
c
=10mAdc, I
B
=1.0mAdc)
(I
c
=50mAdc, I
B
=5.0mAdc)
Current-Gain-Bandwidth Product
電流增益-帶寬乘積
(I
c
=-10mAdc,V
CE
=-10Vdc,f=100MHz)
Output Capacitance
輸出電容
(V
CB
=-10.0Vdc, I
E
=0, f=1.0MHz)
Small-Signal Current Gain
小信號電流增益
(V
CE
=-10Vdc, I
C
=-1.0mAdc, f=1.0KHz)
Noise Figure
噪声係數
(V
CE
=-5.0Vdc, I
C
=-200μAdc,R
s
=1.0kΩf=1.0KHz)
１．FR-5=1.0×0.75×0.062in.
２．Alumina=0.4×0.3×0.024in.99.5%alumina.
３．ulse
Width<300us;Duty Cycle<2.0%.
Symbol
符號
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
EBO
I
CBO
H
FE
Min
最小值
160
180
6.0
—
—
Max
最大值
—
—
—
50
50
Unit
單½
Vdc
Vdc
Vdc
nAdc
nAdc
—
80
80
30
V
CE(sat)
—
250
—
Vdc
—
—
0.15
0.2
V
BE(sat)
—
—
100
—
40
—
1.0
1.0
300
6.0
200
8.0
Vdc
f
T
C
obo
h
fe
NF
MHz
pF
—
dB
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMBT5551(销售型號 MMBT5551)
■
DIMENSION
外½封裝尺寸
單½(UNIT)：mm
