桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMBTA05
■
FEATURES
特點
NPN Low Frequency Amplifier Transistor
■
MAXIMUM
RATINGS
最大額定值(T
a
=25
℃
)
Symbol
符號
V
CBO
V
CEO
V
EBO
Ic
I
B
P
C
T
j
T
stg
Rating
額定值
60
60
4.0
500
50
300
150
-55〜150
Unit
單½
Vdc
Vdc
Vdc
mAdc
mAdc
mW
℃
Characteristic
特性參數
Collector-Base voltage
集電極-基極電壓
-Collector-Emitter Voltage
集電極-發射極電壓
Emitter-Base voltage
發射極-基極電壓
Collector Current-Continuous
集電極電流-連續
Base-Current
基極電流
Collector Power Dissipation
集電極耗散功率
Junction Temperature
結溫
Storage Temperature Range
儲存溫度
■
DEVICE
℃
MARKING
打標
GMBTA05(MMBTA05)=1H
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMBTA05
■
ELECTRICAL CHARACRTERISTICS
電特性
(T
A
=25℃ unless otherwise noted
如無特殊說明，溫度爲
25℃)
Characteristic
特性參數
Collector Cutoff Current
集電極截止電流
Collector Emitter Current
集電極發射極電流
Collect-Base Breakdown Voltage
Symbol
符號
I
CBO
Test Condition
測試條件
V
CB
=60V,I
E
=0
Min.
Typ.
Max. Unit
最小值 典型值 最大值 單½
—
—
0.1
μA
I
CES
V
CE
=60V, V
BE
=0
—
—
0.1
μA
集電極-基極擊穿電壓
Collect-Base Breakdown Voltage
V
(BR)CBO
I
C
=100μA
60
—
—
V
集電極-基極擊穿電壓
Emitter-Base Breakdown Voltage
V
(BR)CEO
I
C
=1.0mA
60
—
—
V
發射極-基極擊穿電壓
V
(BR)EBO
h
FE
(1)
h
FE
(2)
V
CE(sat)
I
E
=100μA
V
CE
=1V,I
C
=10mA
V
CE
=1V,I
C
=100mA
I
C
=100mA,
I
B
=10mA
I
C
=100mA,
I
B
=10mA
V
CE
=1V,I
C
=100mA
4
—
—
V
DC Current Gain
直流電流增益
100
—
—
—
100
—
—
Collector-Emitter Saturation Voltage
集電極-發射極½和壓降
Base
-Emitter Saturation Voltage
基極-發射極½和壓降
Base-Emitter Saturation Voltage
基極-發射極電壓
Transition Frequency
特徵頻率
—
—
0.25
V
V
BE(sat)
—
—
1.2
V
V
BE
—
—
1.2
V
f
T
V
CE
=2V,I
C
=10mA
100
—
—
MHz
