桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMBTA42(销售型號 MMBTA42) GMBTA43(销售型號 MMBTA43)
■
FEATURES
特點
NPN High Voltage Transistor
■
MAXIMUM RATINGS
最大額定值
Characteristic
特性參數
Collector-Emitter Voltage
集電極-射極電壓
Collector-Base Voltage
集電極-極電壓
Emitter-Base Voltage
發射極基極電壓
Collector Current-Continuous
集極電流-連續
Symbol
符號
V
CEO
V
CBO
V
EBO
Ic
GMBTA42
300
300
6.0
500
GMBTA43
200
200
6.0
500
Unit
單½
Vdc
Vdc
Vdc
mAdc
■
THERMAL CHARACTERISTICS
熱特性
Characteristic
特性參數
Total Device Dissipation
½耗散功率
Board(1)
T
A
=
25℃環境溫度 25℃
Derate above25℃
超過
25℃遞減
Thermal Resistance Junction to Ambient
熱阻
Total Device Dissipation
½耗散功率
Alumina Substrate
氧化鋁襯底(2)T
A
=
25℃
Derate above25℃
超過
25℃遞減
Thermal Resistance Junction to Ambient
熱阻
Junction and Storage Temperature
結溫和儲存溫度
■
DEVICE
Symbol
符號
P
D
Max
最大值
225
1.8
Unit
單½
mW
mW/℃
℃/W
mW
mW/℃
℃/W
R
Θ
JA
P
D
556
300
2.4
R
Θ
JA
T
J
,
T
stg
417
150℃, -55to+150℃
MARKING
打標
GMBTA42(销售型號 MMBTA42)=1D;GMBTA43(销售型號 MMBTA43)=M1E
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMBTA42(销售型號 MMBTA42) GMBTA43(销售型號 MMBTA43)
■
ELECTRICAL CHARACTERISTICS
電特性
)
(T
A
=25
=25℃ unless otherwise noted
如無特殊說明，溫度爲
25℃)
Characteristic
Symbol
Min
特性參數
符號
最小值
V
(BR)CEO
Collector-Emitter Breakdown Voltage(3)
GMBTA42
300
集電極-射極擊穿電壓(I
C
=1mAdc,I
B
=0)
GMBTA43
200
V
(BR)CBO
Collector-Base Breakdown Voltage
GMBTA42
300
集電極-基極擊穿電壓(I
C
=100µAdc,I
E
=0)
GMBTA43
200
V
(BR)EBO
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓(I
E
= 100µAdc ,I
C
=0)
6.0
Emitter Cutoff Current
發射極截止電流
I
EBO
(V
EB
=6.0Vdc,I
c
=0)
GMBTA42
—
(V
EB
=4.0Vdc,I
c
=0)
GMBTA43
__
Collector Cutoff Current
集電極截止電流
I
CBO
(V
CB
=200Vdc,I
E
=0)
GMBTA42
—
(V
CB
=160Vdc,I
E
=0)
GMBTA43
__
DC Current Gain
直流電流增益
H
FE
(I
c
=1.0mAdc,V
CE
=10.0Vdc)
25
(I
c
=10mAdc,V
CE
=10.0Vdc)
40
(I
c
=30mAdc,V
CE
=10.0Vdc)
GMBTA42
40
40
GMBTA43
Collector-Emitter Saturation Voltage
V
CE(sat)
GMBTA42
集電極-發射極½和壓降
—
(I
c
=20mAdc, I
B
=2.0mAdc)
GMBTA43
—
Base-Emitter Saturation Voltage
基極-發射極½和壓降
(I
c
=20mAdc, I
B
=2.0mAdc)
Current-Gain-Bandwidth Product
電流增益帶寬乘積
(I
c
=10mAdc,V
CE
=20Vdc,f=100MHz)
Collector-Base Capacitance
輸出電容
(V
CB
=20.0Vdc, I
E
=0, f=1.0MHz)
１．FR-5=1.0×0.75×0.062in.
２．Alumina=0.4×0.3×0.024in.99.5%alumina.
３．Pulse
Width<300us;Duty Cycle<2.0%.
V
BE(sat)
—
Max
最大值
—
—
—
__
—
100
100
100
100
—
300
—
__
0.5
0.5
0.9
Unit
單½
Vdc
Vdc
Vdc
nAdc
nAdc
—
Vdc
Vdc
f
T
C
cb
GMBTA42
GMBTA43
50
—
__
__
3.0
4.0
MHz
pF
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMBTA42(销售型號 MMBTA42) GMBTA43(销售型號 MMBTA43)
■
DIMENSION
外½封裝尺寸
單½(UNIT)：mm
