桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMC6802
特點
Suitable for Driver Stage of Small Motor
小馬達驅動
Complementary to GMA6801
與
GMA6801
互補
■
FEATURES
■
MAXIMUM
(T
RATINGS
最大定額值(T
a
=25
℃
)
Symbol
符號
V
CBO
V
CEO
V
EBO
Rating
額定值
25
18
5.0
1800
180
300
Unit
單½
V
V
V
mA
mA
mW
CHARACTERISTIC
特性參數
Collector-Base Voltage
集電極-基極電壓
Collector-Emitter Voltage
集電極-發射極電壓
Emitter-Base Voltage
發射極-基極電壓
Collector Current-Pulse
集電極電流-脉冲
Base Current
基極電流
Collector Power Dissipation
集電極耗散功率
Junction Temperature
結溫
Storage Temperature Range
儲存溫度
Ic
I
B
P
C
T
j
150
℃
T
stg
-55〜150
℃
■
DEVICE
MARKING
打標
GMC6802 6802
GMC6802=6802
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMC6802
CHARACTERISTICS
電特性
T =25℃ unless otherwise noted
如無特殊說明，溫度爲
25
℃ ）
（T
A
=25
noted
■
ELECTRICAL
Characteristic
特性參數
Collector Cutoff Current
集電極截止電流
Emitter Cutoff Current
發射極截止電流
Collector-Base Breakdown Voltage
Symbol
符號
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
Test Condition
測試條件
V
CB
=15V,I
E
=0
V
EB
=4V,I
C
=0
I
C
=100μA
I
C
=1mA
Min
Typ
最小值 典型值
—
—
Max
最大值
150
Unit
單½
nA
nA
V
—
—
150
集電極-極擊穿電壓
Collector-Emitter Breakdown Voltage
25
—
—
集電極-射極擊穿電壓
Emitter-Base Breakdown Voltage
18
—
—
V
發射極-基極擊穿電壓
V
(BR)EBO
H
FE
(1)
H
FE
(2)
V
CE(sat1)
I
E
=100μA
V
CE
=1V,
I
C
=100mA
V
CE
=1V,
I
C
=2000mA
I
C
=1000mA,
I
B
=100mA
I
C
=2000mA,
I
B
=200mA
5
—
—
V
85
—
400
—
DC Current Gain
直流電流增益
50
—
—
—
—
0.3
V
Collector-Emitter Saturation Voltage
集電極-發射極½和壓降
V
CE(sat2)
—
—
0.5
V
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMC6802
■
DIMENSION
外½封裝尺寸
