桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMD596
■
FEATURES
特點
NPN Low Frequency Amplifier Transistor
■
MAXIMUM
RATINGS (T
a
=25
℃
)
最大額定值
Symbol
符號
V
CBO
V
CEO
V
EBO
Ic
P
C
T
j
T
stg
Rating
額定值
30
25
5
700
225
150
-55〜150
Unit
單½
V
V
V
mA
mW
℃
℃
Characteristic
特性參數
Collector-Base Voltage
集電極-基極電壓
Collector-Emitter Voltage
集電極-發射極電壓
Emitter-Base Voltage
發射極-基極電壓
Collector Current-Continuous
集電極電流-連續
Collector Power Dissipation
集電極耗散功率
Junction Temperature
結溫
Storage Temperature Range
儲存溫度
■
DEVICE
MARKING
打標
GMD596(2SD596)
MARK
H
FE1
DV1
110~180
DV2
135~220
DV3
170~270
DV4
200~320
DV5
250~400
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMD596
■
ELECTRICAL CHARACTERISTICS
電特性
(T
A
=25℃ unless otherwise noted
如無特殊說明,溫度爲
25℃)
Characteristic
特性參數
Collector Cutoff Current
集電極截止電流
Emitter Cutoff Current
發射極截止電流
Collector-Base Breakdown Voltage
Symbol Test Condition Min
Typ
Max
Unit
符號
測試條件
最小值 典型值 最大值 單½
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
H
FE1
H
FE2
V
CE(sat)
V
BE(sat)
V
CB
=30V,
I
E
=0
V
EB
=5V,
I
C
=0
I
C
=100μA
I
C
=1.0mA
I
E
=100μA
V
CE
=1V,
I
C
=100mA
V
CE
=1V,
I
C
=700mA
I
C
=700mA,
I
B
=70mA
I
C
=700mA,
I
B
=70mA
V
CE
=6V,
I
C
=10mA
V
CE
=6V,
I
C
=10mA
V
CB
=6V,I
E
=0,
f=1MHz
—
—
30
25
5
110
50
—
—
—
—
—
—
—
200
—
0.1
0.1
—
—
—
400
—
μA
μA
V
集電極-基極擊穿電壓
Collector-Emitter Breakdown Voltage
集電極-發射極擊穿電壓
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓
DC Current Gain
直流電流增益
DC Current Gain
直流電流增益
Collector-Emitter Saturation Voltage
集電極-發射極½和壓降
Base-Emitter Saturation Voltage
基極-發射極½和壓降
Base-Emitter Saturation
基極-發射極電壓
Transition Frequency
特徵頻率
Collector Output Capacitance
輸出電容
V
V
—
—
0.2
1.0
0.6
1.2
V
V
V
BE
f
T
C
ob
0.6
—
—
0.64
170
12
0.7
—
—
V
MHz
pF
