桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMS2301
SOT-23
場效應晶體管(SOT-23
Field Effect Transistors)
P-Channel Enhancement-Mode MOS FETs
P
沟道增强型
MOS
场效应管
■
MAXIMUM
RATINGS
最大額定值
Symbol
符號
BV
DSS
V
GS
I
D
I
DM
Max
最大值
-20
+8
-2.3
-10
Unit
單½
V
V
A
A
Characteristic
特性參數
Drain-Source Voltage
漏極-源極電壓
Gate- Source Voltage
栅極-源極電壓
Drain Current (continuous)
漏極電流-連續
Drain Current (pulsed)
漏極電流-脉冲
Total Device Dissipation
½耗散功率
T
A
=
25℃環境溫度爲 25℃
Junction
結溫
Storage Temperature
儲存溫度
P
D
450
mW
T
J
T
stg
150
-55to+150
℃
℃
■
DEVICE
MARKING
打標
S2301
GMS2301=
GMS2301=A1
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMS2301
■
ELECTRICAL
CHARACTERISTICS
電特性
(T
A
=25℃ unless otherwise noted
如無特殊說明，溫度爲
25℃)
Characteristic
特性參數
Drain-Source Breakdown Voltage
漏極-源極擊穿電壓(I
D
= -250uA,V
GS
=0V)
Gate Threshold Voltage
栅極開启電壓(I
D
= -250uA,V
GS
= V
DS
)
Drain-Source On Voltage
漏極-源極導通電壓(I
D
= -50mA,V
GS
= -5V)
(I
D
= -500mA,V
GS
= -10V)
Diode Forward Voltage Drop
内附二極管正向壓降(I
S
= -0.75A,V
GS
=0V)
Zero Gate Voltage Drain Current
零栅壓漏極電流(V
GS
=0V, V
DS
= -16V)
(V
GS
=0V, V
DS
= -16V, T
A
=
55℃)
Gate Body Leakage
栅極漏電流(V
GS
=+8V, V
DS
=0V)
Static Drain-Source On-State Resistance
静态漏源導通電阻(I
D
=2.6A,V
GS
=4.5V)
(I
D
=1A,V
GS
=2.5V)
Input Capacitance
輸入電容
(V
GS
=0V, V
DS
= -6V,f=1MHz)
Common Source Output Capacitance
共源輸出電容
(V
GS
=0V, V
DS
= -6V,f=1MHz)
Turn-ON Time
开启時間
(V
DS
= -6V, I
D
= -1A, R
GEN
=6
Ω
)
Turn-OFF Time
关断時間
(V
DS
= -6V, I
D
= -1A, R
GEN
=6
Ω
)
Pulse Width<300μs; Duty Cycle<2.0%
Symbol
符號
BV
DSS
V
GS(th)
Min
最小值
-20
-0.5
Typ
典型值
—
—
Max
最大值
—
-1.5
Unit
單½
V
V
V
DS(ON)
—
—
-0.375
-3.75
-1.2
V
V
SD
—
—
V
I
DSS
—
—
-1
-10
+100
u
A
I
GSS
—
—
n
A
R
DS(ON)
—
—
0.15
0.22
880
270
20
65
Ω
C
ISS
C
OSS
t
(on)
t
(off)
—
—
—
—
—
—
—
—
pF
pF
ns
ns
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMS2301
■
DIMENSION
外½封裝尺寸
